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排序方式: 共有222条查询结果,搜索用时 15 毫秒
81.
82.
High-precision technique for in-situ testing of the PZT scanner based on fringe analysis 总被引:2,自引:0,他引:2
A technique based on fringe analysis is presented for the in-situ testing of the PZT scanner, including the end rotation analysis and displacement measurement. With the interferograms acquired in the Twyman-Green interferometer, the testing can be carried out in real time. The end rotation of the PZT scanner and its spatial displacement deviation are analyzed by processing the fringe rotation and interval changes; displacement of the PZT scanner is determined by fringe shift according to the algorithm of template-matching, from which the relation between the driving voltage and displacement is measured to calibrate the nonlinearity of the PZT scanner. It is shown by computer simulation and experiments that the proposed technique for in-situ testing of the PZT scanner takes a short time, and achieves precise displacement measurement as well as the end rotation angle and displacement deviation measurement. The proposed method has high efficiency and precision, and is of great practicality for in-situ calibration of the PZT scanner. 相似文献
83.
基于PZT压电陶瓷驱动器的非球面能动抛光盘,能够在PZT驱动器的作用下改变面形,用于中小口径非球面镜加工。为优化设计基于PZT压电陶瓷驱动器的非球面能动抛光盘,利用有限元分析方法,计算各驱动器的影响函数,计算非球面能动抛光盘的输出面形,与理论面形比较得到剩余残差。以优化设计驱动器排布方式和极头直径为例,当非球面能动抛光盘中心到非球面工件中心的距离L为120mm,分别计算比较,极头直径为Φ10mm时,19单元PZT圆形排布与21单元PZT方形排布的剩余残差;以及19单元PZT圆形排布时,极头直径为Φ10mm与Φ14mm的剩余残差。结果表明,非球面能动抛光盘产生变形后的剩余残差RMS相应分别为0.303μm、0.367μm、0.328μm。因此,基于PZT压电陶瓷驱动器的非球面能动抛光盘确定选用19单元PZT圆形排布且极头直径Φ10mm。 相似文献
84.
Min Chul Chun Solmin Park Sanghyun Park Ga-yeon Park Bo Soo Kang 《Current Applied Physics》2019,19(4):503-505
We investigated the effect of repetitive switching of polarization on the ferroelectric Pt/Pb(Zr0.52Ti0.48)O3/Pt thin film capacitor by using impedance spectroscopy. From the Cole-Cole plot, the equivalent circuit is described as a combination of the bulk part (a capacitor), the interface part (the constant phase element (CPE), and a parallelly-connected resistor). The circuit parameters were analyzed at various stages of switching. An early increase and a subsequent decrease of the bulk capacitance may represent the wake-up and fatigue phenomena, respectively. The change in the interface part was characterized by an increase in resistance and the growth of n, the exponent of CPE, which may have come from a reduction of defects and the diminished inhomogeneity in the interfacial layer, respectively. The change in the resistance and the coefficient of the CPE in the interface part collectively resulted in an increase in the interfacial impedance. The coercive voltage, which may have intrinsically increased due to the repetitive switching, was even larger as a result of the increased interfacial impedance. 相似文献
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利用扫描力显微术中压电响应模式原位研究了(111)择优取向的PZT60/40铁电薄膜的纳米尺度畴结构及其极化反转行为.铁电畴图像复杂的畴衬度与晶粒中的畴排列和晶粒的取向密切相关.直接观察到极化反转期间所形成的小至30nm宽的台阶结构,该台阶结构揭示了(111)取向的PZT60/40铁电薄膜在极化反转期间其畴成核与生长机理主要表现为铁电畴的纵向生长机理.
关键词:
畴结构
反转机理
PZT薄膜
扫描力显微术 相似文献
89.
The PZT optical fiber phase modulator testing with varying amplitude modulation¥YANGYuanhong;MAJing;ZHANGWeixu(TabsibResearch... 相似文献
90.
M.S. Silva E. Orhan M.S. Góes L.P.S. Santos E. Longo M.A. Zaghete 《Journal of luminescence》2005,111(3):205-213
The polymeric precursor method was used to synthesize lead zirconate titanate powder (PZT). The crystalline powder was then amorphized by a high-energy ball milling process during 120 h. A strong photoluminescence emission was observed at room temperature for the amorphized PZT powder. The powders were characterized by XRD and the percentage of amorphous phase was calculated through Rietveld refinement. The microstructure for both phases was investigated by TEM. The optical gap was calculated through the Wood and Tauc method using the UV-Vis. data. Quantum mechanical calculations were carried out to give an interpretation of the photoluminescence in terms of electronic structure. 相似文献