Nanoembossing and piezoelectricity of ferroelectric Pb(Zr0.3,Ti0.7)O3 nanowire arrays

Arrays of ferroelectric PZT nanowires with lateral size down to 200 nm were fabricated by nanoembossing technology. Structural characterization of the embossed PZT film was studied by Raman spectroscopy. Multidomain configurations of a single nanowire have been explored by vertical mode piezoresponse force microscopy (VPFM). The local electric polarization of the individual ferroelectric nanowire has also been investigated. Excellent ferroelectric and piezoelectric characteristics observed in the embossed PZT nanowires suggest nanoembossing technique proposed in this work is promising to become a useful method for ferroelectric nanowires fabrication.     

Chemical Synthesis Studies on Pb Zr Alkoxides: A New Pb-Zr Structural Type,Pb3Zr7(μ4-O)4 (μ3-O)4(μ-O2CCH3) 8(μ-OiPr)6(Oi Pr)4

The compound [Pb₃Zr₇(₄-O)₄ (₃-O)₄(O₂CCH₃)₈ (OPrⁱ)₁₀] has been isolated from a reaction mixture containing known Pb-Zr and Pb-Ti complexes and characterised by ²⁰⁷Pb and ¹ H NMR and IR spectroscopy. The compound crystallises in the space group P with a = 13.778(4) Å, b = 21.916(5) Å, c = 27.768(10) Å; = 86.52(3)°, = 87.68(3)°, = 72.72(2)° V 7989(4) ų, Z = 4, R = 0.0973. A Pb-Zr alkoxide complex containing acetylacetone has also been synthesised using PbO as a reagent having the composition [Pb₂Zr₄(O)₂ (OⁱPr)₆(OⁿPr)₈ (acac)₂] allocated on the basis of MW, mass spectral and ¹H NMR data.     

电极对PZT铁电薄膜的铁电和光学性能的影响

采用射频磁控溅射(RF Magnetron Sputtering)工艺在Si片上分别制备Pt/Ti和LaNiO3 (LNO)底电极,然后在不同的底电极上沉积PbZr0.52Ti0.48O3(PZT)铁电薄膜,在大气环境中对沉积的PZT薄膜进行快速热退火处理(RTA).用X射线衍射(XRD)分析PZT薄膜的相结构和结晶取向,原子力显微镜(AFM)分析薄膜的表面形貌和微结构.再沉积LNO作为顶电极制成"三明治"结构的LNO/PZT/Pt和LNO/PZT/LNO样品,用 RT66A标准铁电测试系统分析样品的电学特性,傅立叶红外光谱仪分别测得样品的反射谱和透射谱.分析了不同电极对PZT铁电薄膜的铁电和光学性能的影响.     

A Raman and dielectric study of ferroelectric ceramics

Dielectric and Raman scattering experiments were performed on various ceramics with composition Ba(Ti_1-xZr_x)O₃. Such lead-free, environmental-friendly materials were shown, from dielectric measurements, to exhibit behaviours extending from conventional to relaxor ferroelectrics on increasing the zirconium concentration. The evolution of the Raman spectra was studied as a function of temperature for various compositions, and the spectroscopic signature of the corresponding phases was determined. In the relaxor state, the variation of the integrated intensity of the Raman lines with temperature showed a plateau at low temperature. This anomaly was also detected as a peak in depolarization current measurements, and attributed to ergodicity breaking which characterizes usual relaxor systems. Raman results hint at locally rhombohedral polar nanoregions resulting from the random fields associated with Zr ions. Received 25 September 1998     

压电晶体位移特性曲线干涉自动测量方法

本文提出了压电晶体(PZT)位移物曲线自动干涉测量方法,该方法利用干涉仪把PZT的微位移量转化成干涉条纹相位变化量,通过快速傅里叶变换(FFT)方法自动复原干涉条纹中包含的相位的变化量,从而高精度地检测出PZT的位移特性曲线.根据该方法,利用CCD摄象机、图象板和干涉仪组合成一套光、机、电一体化的微位移自动测试系统,实际测量了我们研制的PZT随电压变化的位移特性曲线.实验表明,该方法原理实现简单,且能实现高精度、自动、实时和动态测量.     

Effect of excess Pb on crystallinity and ferroelectric properties of PZT(40/60) films on LaNiO3 coated Si substrates by MOD technique

Pb(Zr_0.4Ti_0.6)O₃ [PZT(40/60)] films were deposited onto LaNiO₃ (LNO) coated Si substrates by metal-organic decomposition (MOD) technique. Excess Pb was incorporated in the film by using excess Pb (2%–15%) in the solution. The crystallinity and ferroelectric properties of PZT films were investigated by using X-ray diffraction (XRD), RT66A test system and HP4194 impedance analyzer, respectively. Rayleigh law was employed to analyze the defect concentration in the films. The results show that all the PZT films show the (1 0 0) preferential orientation with complete perovskite structure except for the 2% film displaying some pyrochlore phase. The (1 0 0) preferential orientation is mainly attributed to LNO bottom electrode, which has the highly (1 0 0) preferential orientation. The 10% film shows the best polarization and dielectric properties. The remnant polarization and coercive field are about 10.1 μC/cm² and 73 kV/cm under an electric field around 330 kV/cm, respectively. And the dielectric constant and dissipation factor are about 656 and 0.022 at a frequency of 1 kHz, respectively. The good ferroelectric properties of the 10% film are mainly attributed to the low defect concentration in the film.     

Phase transitions in Sr 0.61 Ba 0.39 Nb 2 O 6 :Ce 3+ : I. Susceptibility of clusters and domains

The complex dielectric susceptibility of Sr _0.61 Ba _0.39 Nb ₂ O ₆ :Ce ³⁺ (SBN61:Ce) has been measured at frequencies and temperatures before and after poling. The relaxor behaviour with large polydispersivity observed above the ferroelectric phase transition temperature, T _c = 360 and 340 K for x (Ce) = 0 and 0.0066, respectively, is perfectly modeled within the framework of Chamberlin's dynamically correlated domain approach. Below T _c the dynamic nanodomain state crosses over into a ferroelectric state with polydispersive domain wall dynamics at very low frequencies. Presumably SBN61:Ce belongs to the three-dimensional random field Ising rather than to the dipole glass universality class. Received 1 October 1999     

金属-EDTA螯合物法制备Pb(Zr,Ti)O_3超细粉的研究

以硝酸盐和EDTA(乙二胺四乙酸)为原料,用金属-EDTA螯合物热分解法制备均匀性好的Pb(Zr,Ti)O_3超细粉,经FT-IR光谱,热分析,X射线衍射分析和透射电镜等方法研究表明:硝酸根离子可加速金属-EDTA螯合物的热分解,仅在250C时便有Pb(Zr,Ti)O_3相生成,除PbO外不生成其它中间相,随着温度进一步升高,中间相PbO逐渐消失,经700C1h煅烧所得到的单一Pb(Zr,Ti)O_3相超细粉,平均粒径为34nm。     

(Ni0.8Zn0.2Fe2O4)epoxy-PZT双层膜中的磁电效应

讨论了Ni0.8Zn0.2Fe2O4(NZFO)与锆钛酸铅(PZT)的双层膜结构样品的磁电(ME)效应.NZFO粉料由溶胶-凝胶法制成,再经900℃热压,并高温烧结.在该双层膜中测量到了很强的磁电相互作用.发现横向的磁电效应比纵向效应大一个数量级,并且随NZFO烧结温度的提高而增加.当烧结温度从950℃上升到1380℃时,横向ME电压系数(αE)的最大值变化范围为25.6 mV Am-2≤αE≤199.6 mV Am-2.理论分析显示NZFO-PZT双层膜样品中ME效应源于NZFO与PZT之间相对良好的磁电耦合.     

Ferroelectric effect and equivalent polarization charge model of PbZr_(0.2)Ti_(0.8)O_3 on AlGaN/GaN MIS-HEMT

PbZr_(0.2)Ti_(0.8)O_3(PZT) gate insulator with the thickness of 30 nm is grown by pulsed laser deposition(PLD) in AlGa N/Ga N metal–insulator–semiconductor high electron mobility transistors(MIS-HEMTs). The ferroelectric effect of PZT Al Ga N/Ga N MIS-HEMT is demonstrated. The polarization charge in PZT varies with different gate voltages. The equivalent polarization charge model(EPCM) is proposed for calculating the polarization charge and the concentration of two-dimensional electron gas(2 DEG). The threshold voltage(Vth) and output current density(IDS) can also be obtained by the EPCM. The theoretical values are in good agreement with the experimental results and the model can provide a guide for the design of the PZT MIS-HEMT. The polarization charges of PZT can be modulated by different gate-voltage stresses and the Vthhas a regulation range of 4.0 V. The polarization charge changes after the stress of gate voltage for several seconds. When the gate voltage is stable or changes at high frequency, the output characteristics and the current collapse of the device remain stable.