Structural characterization and electrical properties of quaternary CdGaInSe4 thin films

Stoichiometric bulk ingot material of the quaternary CdGaInSe₄ was prepared by direct fusion of the constituent elements in vacuum-sealed silica tubes. Nearly stoichiometric films could be deposited by thermal evaporation of the ingot material in 10⁻³ Pa vacuum at a deposition rate 1.5 nm/s. Crystal structure investigation was carried out using X-ray diffractometry and transmission electron diffraction. Elemental composition was determined by means of energy-dispersive X-ray spectrometry. CdGaInSe₄ possesses a tetragonal defective chalcopyrite structure (space group ) with lattice parameters a=0.5665 nm and c=1.1221 nm. All the films exhibited n-type conduction and ohmic behaviour with metallic films of Au, Cd, In, Ag and Sb. However, in the case of Al a nonlinear behaviour occurs. Analysis of the temperature dependence of the dark conductivity in the range 130-470 K has revealed three operating conduction mechanisms; a variable range hopping conduction process dominating at low temperatures below 270 K, followed by a transport of the charge carriers across intercrystalline barriers and grain boundaries in the temperature range 270-353 K, and finally an extrinsic conduction above 353 K.     

长脉冲激光作用下薄膜表面鼓包的形成机理

 在光学薄膜的激光损伤实验中,可以在显微镜下观测到激光辐照引起的尺寸较大、形状对称性很好的鼓包。从杂质气化的角度,应用弹性力学的球壳受压膨胀模型,分析薄膜表面鼓包的形成机制,同时得到了相应情况下薄膜的损伤机制。结果表明,半径越大杂质在激光辐照下越容易引起薄膜破坏,填埋得越浅的杂质也越容易引起薄膜破坏。杂质诱导破坏机制下,薄膜的裂纹首先出现在杂质附近的薄膜基体中。在薄膜中出现裂纹的临界状态时,半径越大、填埋得越深的杂质所引起的鼓包尺寸越大、高度越高。这种热力耦合模型,弥补了现有理论的不足,进一步完善了现有理论。     

Multifunctional Thermally Conductive Composite Films Based on Fungal Tree-like Heterostructured Silver Nanowires@Boron Nitride Nanosheets and Aramid Nanofibers

Thermal conduction for electronic equipment has grown in importance in light of the burgeoning of 5G communication. It is imperatively desired to design highly thermally conductive fillers and polymer composite films with prominent Joule heating characteristics and extensive mechanical properties. In this work, “solvothermal & in situ growth” method is carried out to prepare “Fungal tree”-like hetero-structured silver nanowires@boron nitride nanosheet (AgNWs@BNNS) thermally conductive fillers. The thermally conductive AgNWs@BNNS/ANF composite films are obtained by the method of “suction filtration self-assembly and hot-pressing”. When the mass fraction of AgNWs@BNNS is 50 wt%, AgNWs@BNNS/ANF composite film presents the optimal thermal conductivity coefficient of 9.44 W/(m ⋅ K) and excellent tensile strength of 136.6 MPa, good temperature-voltage response characteristics, superior electrical stability and reliability, which promise a wide application potential in 5G electronic devices.     

Adjustable Plane Curvature of Covalent Organic Framework Enabling Outstanding Dielectric,Electret, and High-Temperature Processing Properties

With the rapid development of integrated circuits towards miniaturization and complexity, there is an urgent need for materials with low dielectric constant/loss and high processing temperatures to effectively prevent signal delay and crosstalk. With high porosity, thermal stability, and easy structural modulation, covalent organic frameworks have great potential in the field of low dielectric materials. However, the optimization of dielectric properties by modulating the conjugated/plane curvature structure of covalent organic frameworks (COFs) has rarely been reported. Accordingly, we herein innovatively prepare COF films with adjustable planar curvature, hence possessing ultralow dielectric constant (1.9 at 1 kHz), ultralow dielectric loss at 1 kHz (0.0029 at room temperature, 0.0052 at 200 °C), high thermal decomposition temperature (5 % weight loss temperature, 473 °C) and good hydrophobicity (water contact angle, 105.3°). Also, to the best of our knowledge, we are the first to report that the resulting COF film enables high surface potential (≈320 V) for one week, attributing to its intrinsic high porosity, thus presenting great potential in electret applications. Accordingly, this innovative work provides a readily available and scalable idea to prepare materials with comprehensively excellent dielectric and electret properties as well as high processing temperatures simultaneously for advanced electronic device applications.     

Photodegradation of CuBi2O4 Films Evidenced by Fast Formation of Metallic Bi using Operando Surface-sensitive X-ray Scattering**

CuBi₂O₄ has recently emerged as a promising photocathode for photo-electrochemical (PEC) water splitting. However, its fast degradation under operation currently poses a limit to its application. Here, we report a novel method to study operando the semiconductor-electrolyte interface during PEC operation by surface-sensitive high-energy X-ray scattering. We find that a fast decrease in the generated photocurrents correlates directly with the formation of a metallic Bi phase. We further show that the slower formation of metallic Cu, as well as the dissolution of the electrode in contact with the electrolyte, further affect the CuBi₂O₄ activity and morphology. Our study provides a comprehensive picture of the degradation mechanisms affecting CuBi₂O₄ electrodes under operation and poses the methodological basis to investigate the photocorrosion processes affecting a wide range of PEC materials.     

Substrate-Bound Diarylethene-Based Anisotropic Metal–Organic Framework Films as Photoactuators with a Directed Response

Molecular machines and responsive materials open a plethora of new opportunities in nanotechnology. We present an oriented crystalline array of diarylethene (DAE)-based photoactuators, arranged in a way to yield an anisotropic response. The DAE units are assembled, together with a secondary linker, into a monolithic surface-mounted metal–organic framework (SURMOF) film. By Infrared (IR) and UV/Vis spectroscopy as well as by synchrotron X-ray diffraction, we show that the light-induced extension changes of the molecular DAE linkers multiply to yield mesoscopic and anisotropic length changes. Due to the special architecture and substrate-bonding of the SURMOF, these length changes are transferred to the macroscopic scale, leading to the bending of a cantilever and performing work. This research shows the potential of assembling light-powered molecules into SURMOFs to yield photoactuators with a directed response, presenting a path to advanced actuators.