Studies on defect formation in femtosecond laser-irradiated PMMA and PDMS

We report here our results on the spectroscopic and elemental analysis of femtosecond (fs) laser-modified regions in polymers of polymethylmethacrylate (PMMA) and polydimethylsiloxane (PDMS) in the context of defect formation and emission in the visible region. Different physical and chemical models are used to explain the changes in modified regions. We found that the emission intensity, recorded from the fs-modified regions of polymers, decreased over time to a constant value. We also demonstrate that these materials are suitable for the preparation of the microstructures en route for light guiding applications. The fs laser-irradiated regions exhibited paramagnetic behavior as was confirmed from electron spin resonance studies through the formation of peroxide-type free radicals. Raman mapping was performed in the modified regions which consisted of defects and found that the modulations in intensity are predominant in the central portion of the structure compared to edges. Elemental analysis has been performed in the modified regions using field emission scanning electron microscope instrument and energy-dispersive X-ray absorption spectroscopy to estimate the percentage contents of individual elements which resulted in defect formation such as paramagnetic and optical centers.     

Chiral Dinuclear EuIII,TbIII, and YIII Complexes Supported by P-Stereogenic Linear Tetraphosphine Tetraoxide

A P-stereogenic linear tetraphosphine tetraoxide, (R,R)- or (S,S)-dpmppm(=O)₄, was synthesized to prepare C₂ dinuclear M(hfa)₃ complexes (M=Eu, Tb, Y) as the first example of lanthanide(III) complexes with P-chiral multidentate phosphine oxides. The mononuclear M(hfa)₃ complexes (M=Eu, Y) with a P-chiral diphosphine dioxide, tpdpb(=O)₂, were also prepared, and comparison of their photophysical properties for the Eu^III complexes revealed that significant chiral induction from the P-chiral centers arises on the achiral M(hfa)₃ units through intramolecular π-π stacking constraint in the dinuclear system.     

The resonant secondary emission of the F center in alkali halides

The secondary radiation after resonant excitation of F center and its linear polarization P correlated to the polarization of resonant light have been measured for five alkali halides at low temperatures. In KC1, the spectrum of P over the whole Stokes region is divided into three successive regions, the depolarization range at the one-phonon Raman scattering, the near plateau range, and the depolarization range down to vanishing. The former two have common relevance to resonant energy and symmetries of coupled phonons. These relevances are interpreted adopting a configuration coordinate model for 2s- and 2p-like excited states.     

A 3D Porous Metal Organic Framework Based on Infinite 1D Nickel(II) Chains with Rutile Topology Displaying Open Metal Sites

The reaction of Ni^II with a tetra‐benzoate pyrene ligand produces a 3D porous framework based on infinite 1D Ni^II chains. The Ni^II–O connectivity and the formation of a hydroxo‐bridge (μ₃‐OH) responsible for the connection of the central Ni^II atoms within the 1D Ni^II–(μ₃‐OH)₂–Ni^II chains can be straightforwardly compared with the Ti^IV–O–Ti^IV connectivity seen in TiO₂. The arrangement of the TBAPy ligand around the 1D rutile‐based chains leads in the generation of a porous framework with two distinct types of pores; based on the chemistries of these two types of pores, one can be labelled as hydrophobic and the other as hydrophilic. The use of different activation methods results in the generation of either a porous framework free of guest molecules or a completely solvent‐free material, in which the terminal H₂O molecules bound to Ni^II were removed, leading thus to a framework with open Ni^II sites. CO₂ isotherms collected on both frameworks at 195 K and one barshowed type I isotherms characteristic of microporous materials (BET surface areas for: guest‐free framework: 257(3) m² · g^–1; solvent‐free framework: 362(2) m² · g^–1). The affinity of both networks at zero coverage for both CO₂ and CH₄ was found to be greater when the unsaturated Ni^II sites are available within the void space.     

Enantioselective Synthesis of Acyclic Orthogonally Functionalized Compounds Bearing a Quaternary Stereocenter Using Chiral Ammonium Salt Catalysis

We herein report an asymmetric protocol to access a series of orthogonally functionalized acyclic chiral target molecules containing a quaternary stereogenic center by carrying out the enantioselective α-alkylation of novel orthogonally functionalized dioxolane-containing cyanoacetates under chiral ammonium salt catalysis. By using just 1 mol % of Maruoka's spirocyclic ammonium salt catalysts enantioselectivities up to e.r.=97.5 : 2.5 could be achieved and further functional group manipulations of the products were carried out as well.     

Towards a spin-ensemble quantum memory for superconducting qubits

This article reviews efforts to build a new type of quantum device, which combines an ensemble of electronic spins with long coherence times, and a small-scale superconducting quantum processor. The goal is to store over long times arbitrary qubit states in orthogonal collective modes of the spin-ensemble, and to retrieve them on-demand. We first present the protocol devised for such a multi-mode quantum memory. We then describe a series of experimental results using NV (as in nitrogen vacancy) center spins in diamond, which demonstrate its main building blocks: the transfer of arbitrary quantum states from a qubit into the spin ensemble, and the multi-mode retrieval of classical microwave pulses down to the single-photon level with a Hahn-echo like sequence. A reset of the spin memory is implemented in-between two successive sequences using optical repumping of the spins.     

First‐principles identification of defect levels in Er‐doped GaN

Erbium (Er) doped GaN has been studied extensively for optoelectronic applications, yet its defect physics is still not well understood. In this work, we report a first‐principles hybrid density functional study of the structure, energetics, and thermodynamic transition levels of Er‐related defect complexes in GaN. We discover for the first time that Er_Ga–C_N–V_N, a defect complex of Er, a C impurity, and an N vacancy, and Er_Ga–O_N–V_N, a complex of Er, an O impurity, and an N vacancy, form defect levels at 0.18 eV and 0.46 eV below the conduction band, respectively. Together with Er_Ga–V_N, a complex of Er and an N vacancy which has recently been found to produce a donor level at 0.61 eV, these defect complexes provide explanation for the Er‐related defect levels observed in experiments. The role of these defects in optical excitation of the luminescent Er center is also discussed.     

Synergistic Peptide and Gold Catalysis: Enantioselective Addition of Branched Aldehydes to Allenamides

The combination of a peptide catalyst and a gold catalyst is presented for enantioselective addition reactions between branched aldehydes and allenamides. The two catalysts act in concert to provide γ,δ-enamide aldehydes bearing a fully substituted, benzylic stereogenic center – a structural motif common in many natural products and therapeutically active compounds – with good yields and enantioselectivities. The reaction tolerates a variety of alkyl and alkoxy substituted aldehydes and the products can be elaborated into several chiral building blocks bearing either 1,4- or 1,5- functional group relationships. Mechanistic studies showed that the conformational features of the peptide are important for both the catalytic efficiency and stereochemistry, while a balance of acid/base additives is key for ensuring formation of the desired product over undesired side reactions.     

Swift heavy ion induced capacitance and dielectric properties of Ni/n-GaAs Schottky diode

The in-situ capacitance and dielectric properties of 25 MeV C⁴⁺ ion irradiated Ni/n-GaAs Schottky barrier diode (SBD) were studied at 100 kHz in the fluence range 5 × 10¹⁰ – 5 × 10¹³ ions/cm². The investigation shows reduction in capacitance and charge density with increase in ion fluence. Consequent changes were observed in other related parameters like conductance, dielectric constant, dielectric loss, loss tangent and electrical modulus. The results were interpreted in terms of generation of swift heavy ion induced acceptor trap states by electronic energy loss mechanism. Besides, the switch over characteristics of depletion to inversion regions in the CV plot reveals minority carrier recombination centers also. The dispersion and relaxation peaks observed in bias dependent dielectric plots were ascribed to the polarization and relaxation mechanism due to the interfacial trap states. The traps and recombination centers were found to alter the barrier characteristics of the fabricated SBD depending upon the ion fluence.