不同衬底和CdCl2退火对磁控溅射CdS薄膜性能的影响

在科宁7059玻璃, FTO, ITO, AZO四种衬底上磁控溅射CdS薄膜, 并在CdCl₂+干燥空气380 ℃退火, 分别研究了不同衬底和退火工艺对CdS薄膜形貌、结构和光学性能的影响. 扫描电子显微镜形貌表明: 不同衬底原位溅射CdS薄膜的形貌不同, 退火后相应CdS薄膜的晶粒度和表面粗糙度明显增大. XRD衍射图谱表明: 不同衬底原位溅射和退火CdS薄膜均为六角相和立方相的混相结构, 退火前后科宁7059玻璃, FTO, AZO衬底上CdS薄膜有 H(002)/C(111) 最强衍射峰, ITO衬底原位溅射CdS薄膜没有明显的最强衍射峰, 退火后出现 H(002)/(111) 最强衍射峰. 紫外-可见分光光度计分析表明: AZO, FTO, ITO, 科宁7059玻璃衬底CdS薄膜的可见光平均透过率依次减小, 退火后相应衬底CdS薄膜的可见光平均透过率增大, 光学吸收系数降低; 退火显著增大了不同衬底CdS薄膜的光学带隙. 分析得出: 上述结果是由于不同衬底类型和退火工艺对CdS多晶薄膜的形貌、结构和带尾态掺杂浓度改变的结果. 关键词： CdS薄膜 磁控溅射 退火再结晶 带尾态     

Properties of blends of poly(vinyl chloride) and chlorinated polyethylene. I. Optical methods of characterization of PVC multiphase systems

Hitherto it has not been possible to produce a microscopic image with adequate resolution of the high-impact two-phase system poly(vinyl chloride) (PVC)/chlorinated polyethylene (CPE) due to inadequate phase contrast. With the aid of various chemical staining methods and through ion etching, a way has been found for studying the microstructure of the PVC/CPE system by light microscopy and electron microscopy. These independent visualization techniques and scanning electron micrographs of fracture surfaces show, as the morphology with optimal mechanical and rheological properties, networklike distribution of the rubber phase and, imbedded in this, a PVC phase consisting of primary particles.     

奶制品热值测定

利用WZR-1A型精密微电脑量热计系统地测量了8种奶制品的恒容燃烧热.准确称取一定量的基准物质,放入氧弹中充入高压纯氧,将测试样品在氧弹中完全燃烧,并记录燃烧前后时间与量热计温度变化数据,利用仪器自带的数据处理软件计算出仪器热容量,然后再准确称取一定量的奶制品,装入已准确测定热值的燃烧胶囊中后,将测试数据用自编的计算机处理程序对测试数据处理,从而得到奶制品的燃烧热值.此法准确、简便、实用,可用于日常检测工作.     

DESIGNING A DIFFRACTIVE OPTICAL ELEMENT FOR CONTROLLING THE BEAM PROFILE IN A THREE-DIMENSIONAL SPACE USING THE SIMULATED ANNEALING ALGORITHM

We have designed a spatially quantized diffractive optical element (DOE) for controlling the beam profile in a three-dimensional space with the help of the simulated annealing (SA) algorithm. In this paper, we investigate the annealing schedule and the neighbourhood which are the deterministic parameters of the process that warrant the quality of the SA algorithm. The algorithm is employed to solve the discrete stochastic optimization problem of the design of a DOE. The objective function which constrains the optimization is also studied. The computed results demonstrate that the procedure of the algorithm converges stably to an optimal solution close to the global optimum with an acceptable computing time. The results meet the design requirement well and are applicable.     

Dynamics of Transiently Chaotic Neural Network and Its Application to Optimization

Through adding a nonlinear self-feedback term in the evolution equations of nerual network,we introduced a transiently chaotic neural network model.In order to utilize the transiently chaotic dynamics mechanism in optimization problem efficiently,we have analyzed the dynamical pocedure of the transiently chaotic neural network model and studied the function of the crucial bifurcation parameter which governs the chaotic behavior of the system.Based on the dynamical analysis of the transiently chaotic neural network model,Chaotic annealing algorithm is also examined and improved.As an example,we applied chaotic annealing method to the traveling salesman problem and obtained good results.     

Electrode metal penetration of amorphous indium gallium zinc oxide semiconductor thin film transistors

Penetration effects of various electrode materials, namely Al, Au, and Cu, on the physical and electrical characteristics of amorphous oxide semiconductor thin film transistors (TFTs) were investigated. Amorphous indium gallium zinc oxide (a-IGZO) TFTs were fabricated with conventional staggered bottom gate structures on a p-type Si substrate. X-ray photoemission spectroscopy (XPS) analysis under the electrode deposition area revealed variations in the oxygen bonding states and material compositions of the a-IGZO layer. Field-emission scanning electron microscopy (FE-SEM) with the line scan of energy dispersive spectroscopy (EDS) showed lateral penetration by the electrode metal. To compare the electrical characteristics of the tested TFTs, the initial current–voltage (I–V) transfer characteristics were examined. In addition, the tested TFTs fabricated using various electrode materials were tested under bias stress to verify the correlations between variations in TFT characteristics and both the metal work function and penetration-induced oxygen vacancies in the channel around the contact area.     

Dealloyed PtCu catalyst as an efficient electrocatalyst in oxygen reduction reaction

Pt-transition metal alloy catalysts with an active Pt surface have exceptional properties for use in oxygen electro-reduction reactions in fuel cells. Herein, we report the simple synthesis of dealloyed PtCu catalysts and their catalytic performance in oxygen reduction. The dealloyed PtCu catalysts consisted of a Pt-enriched shell with a Pt–Cu alloy core and were synthesized through a chemical co-reduction process followed by thermal annealing and chemical dealloying. During synthesis, thermal annealing leads to a high degree of formation of PtCu alloy particles (e.g., PtCu or PtCu₃), and chemical dealloying causes selective dissolution of unstable Cu species from the surface layers of the PtCu alloy particles, resulting in a PtCu alloy@Pt-enriched surface core–shell configuration. Our PtCu₃/C catalyst exhibits a great improvement in the oxygen reduction reaction with a mass activity of 0.501 A/mg_Pt, which is 2.24 times greater than that of a commercial Pt catalyst. In this article, the synthesis details, characteristics and performance improvements in ORR of chemically dealloyed PtCu catalysts are systemically explained.     

旋涂法制备氧化锆介质层及其在薄膜晶体管中的应用

采用旋涂法制备了氧化锆介质层薄膜,重点讨论了退火温度以及旋涂转速对薄膜性能的影响及作用机制。研究发现高温后退火一方面使得氧化锆水合物脱水形成氧化锆,另一方面促使氧化锆薄膜结晶。此外,转速较高时,其变化对薄膜厚度及粗糙度无显著影响。当转速为5 000 r/min、退火温度为300℃时,制备的绝缘层厚度具有良好的厚度均匀性,粗糙度为0.7 nm,漏电流为3.13×10^-5 A/cm²（电场强度1 MV/cm）。最终,利用ZrO₂薄膜作为栅极绝缘层,在玻璃基板上制备了铟镓锌氧化物-薄膜晶体管（IGZO-TFT）,其迁移率为6.5 cm²/（V·s）,开关比为2×10⁴。     

低起始温度的线性升温热处理对直拉硅中氧沉淀的影响

研究了直拉硅片从不同的温度线性升温(Ramping)到750℃，然后在750℃退火64 h过程中的氧沉淀行为. 结果表明，Ramping对硅片中氧沉淀的形成有明显的促进作用，且起始温度越低促进作用越强. 这是因为在Ramping处理中，低温(450—650℃)热处理阶段氧的扩散速率显著增强，促进了氧沉淀核心的形成，且较低的Ramping升温速率有利于氧沉淀核心的稳定和继续长大. 进一步的实验结果还表明，低起始温度的Ramping处理可应用于硅片的内吸杂工艺，能促进氧沉淀的生成提高硅片的内吸杂能力，减少热预     

Dependence of the laser-induced voltages on the oxygen content in normal state YBa2Cu3O7−δ films

Our investigation on the relation between oxygen content and the laser-induced voltages of the YBa₂Cu₃O_7−δ films in normal-state shows that deoxygenation of the superconducting films reduces the laser-induced voltages greatly, even reverses the sign of the signals at large oxygen deficiency. The absolute value of the negative signal at large oxygen deficiency can be greater than that of the positive signal.