Effect of thermal treatment in vacuum on Fe-doped SnO2 powders

A sample of 10 at% Fe-doped SnO₂ powder was prepared by mechanical alloying and then thermally treated at 773 K in vacuum. The fit of the diffraction patterns and X-ray absorption spectroscopy measurements revealed that the as milled sample was pure doped rutile. Fe dissolved into SnO₂ was found in Fe²⁺/Fe³⁺ ionic valence with mainly paramagnetic behavior. After the thermal treatment all techniques indicate the formation of the ternary Sn_0.36Fe_2.64O₄ spinel phase, which is responsible for the observed ferromagnetism.     

紫外可见光谱的水产养殖水体有机物浓度快速检测研究

应用紫外可见（ultraviolet/visible,UV/Vis）光谱技术对表征水产养殖水体中有机物浓度的指标化学需氧量（chemical oxygen demand,COD）进行快速测量,对采集到的135份甲鱼养殖水样进行UV/Vis波段全光谱扫描,采用无信息变量消除（uninformative variable elimination,UVE）和连续投影算法（successive projections algorithm,SPA）相结合的变量选择算法选取全波段光谱中的特征波长,从201个UV/Vis光谱变量中选取了7个特征波长,只占全波段光谱变量的3.48%,降低了建模的时间和模型的复杂度。结合最小二乘支持向量机（least-square support vector machine,LS-SVM）算法进行COD预测建模,结果表明：使用特征波长建模的预测效果（相关系数r（correlation coefficient）=0.89,预测均方根误差（root mean square error of prediction,RMSEP）=15.46 mg·L-1）好于使用全波段光谱建模的预测效果（r=0.88,RMSEP = 15.71 mg·L-1）。使用UVE-SPA变量选择算法获取UV/Vis光谱特征波长,结合LS-SVM建模,可以快速、准确的测量水产养殖水体中的COD浓度,为进一步实现水产养殖水质的在线检测以及其他水质参数的快速测定奠定了基础。     

Polaron effect dependence of thermopower in organic semiconductors

A unified physical model for thermopower was presented in organic semiconductors, based on the Marcus theory and variable-range hopping theory. According to the proposed model, the characteristic of charge carrier thermoelectric transport in organic semiconductors has been investigated. In particular, polaron effects, energetic disorder, and carrier density dependence of the thermopower have been discussed in detailed. The calculation also shows a good agreement with the experimental data in organic semiconductors.     

低功耗聚合物Mach-Zehnder热光开关

采用传统的半导体工艺制作了聚合物Mach-Zehnder型热光开关.利用扫描电镜观测波导形貌,通过红外摄像机观测波导的近场输出光斑,在通信波段1 550 nm波长下测试了器件的输出光谱.在电极上施加直流信号,测得热光开关的消光比为－15 dB,驱动功率为16 mW.引入直流偏置网络,获得了器件的开关特性曲线,经测量开关上升时间为1.2 ms,下降时间为0.8 ms.     

Effect of oblique incidence angle of sunlight on the optimized folding angle of V-shaped organic solar cells

We numerically investigate the effect of the incidence angle of sunlight on the optimized folding angle of V-shaped organic solar cells (VOSCs) to obtain the best power conversion efficiency in a realistically operating environment. The light absorbance at the active layer is calculated based on the finite element method with respect to the incidence angle of sunlight and the folding angle of the VOSC. We calculate the generation energy density per day at each folding angle by integrating the angular response of the short-circuit current and the open-circuit voltage with the consideration of the variation of the incidence angle during daytime. We show that the optimized folding angle of the VOSC based on the variation of the generation energy density per day is close to that determined from the variation of the electric power density in normal incidence, which has been widely used to optimize the folding angle of VOSCs.     

Highly efficient greenish blue-emitting organic diodes based on pyrene derivatives

We report the synthesis of pyrene derivatives as the light emissive layer for highly efficient organic electroluminescence (EL) diodes. Multilayer devices were fabricated with pyrene derivatives (ITO/NPB (50 nm)/blue material (30 nm)/BCP (10 nm)/Alq₃ (30 nm)/LiF (1 nm)/Al). By using 1,1′-dipyrene (DP) and 1,4-dipyrenyl benzene (DPB), the devices produced the blue EL emissions with 1931 Commission International de L’Eclairage coordinates of (x=0.21, y=0.35) and (x=0.19, y=0.25), respectively. The device with DPB shows a maximum brightness of 42,445 cd/m² at 400 mA/cm² and the luminance efficiency of 8.57 cd/A and 5.18 lm/W at 20 mA/cm².     

Molecular control over Ag/p-Si diode by organic layer

Electrical transport properties of Ag metal-fluorescein sodium salt (FSS) organic layer-silicon junction have been investigated. The current-voltage (I-V) characteristics of the diode show rectifying behavior consistent with a potential barrier formed at the interface. The diode indicates a non-ideal I-V behavior with an ideality factor higher than unity. The ideality factor of the Ag/FSS/p-Si diode decreases with increasing temperature and the barrier height increases with increasing temperature. The barrier height (φ_b=0.98 eV) obtained from the capacitance-voltage (C-V) curve is higher than barrier height (φ_b=0.72 eV) derived from the I-V measurements. The barrier height of the Ag/FSS/p-Si Schottky diode at the room temperature is significantly larger than that of the Ag/p-Si Schottky diode. It is evaluated that the FSS organic layer controls electrical charge transport properties of Ag/p-Si diode by excluding effects of the SiO₂ residual oxides on the hybrid diode.     

The structural, electronic and optical properties of CdxZn1 − xSe ternary alloys

The structural, electronic, and optical properties of Cd_xZn_1 − xSe alloys are investigated using the first-principles plane-wave pseudopotential method within the LDA approximations. In particular, the lattice constant, bulk modulus, electronic band structures, density of state, and optical properties such as dielectric functions, refractive index, extinction coefficient and energy loss function are calculated and discussed. Our results agree well with the available data in the literature.     

Photoluminescence of patterned arrays of vertically stacked InAs/GaAs quantum dots

We report on photoluminescence measurements of vertically stacked InAs/GaAs quantum dots grown by molecular beam epitaxy on focused ion beam patterned hole arrays with varying array spacing. Quantum dot emission at 1.24 eV was observed only on patterned regions, demonstrating preferential nucleation of optically active dots at desired locations and below the critical thickness for dot formation at these growth conditions. Photoluminescence measurements as a function of varying focused ion beam irradiated hole spacing showed that the quantum dot emission intensity increased with decreasing array periodicity, consistent with increasing dot density.     

Effect of an Al-doped ZnO electron transport layer on the efficiency of inverted bulk heterojunction solar cells

Doping is a widely-implemented strategy for enhancing the inherent electrical properties of metal oxide charge transport layers in photovoltaic devices because higher conductivity of electron transport layer (ETL) can increment the photocurrent by reducing the series resistance. To improve the conductivity of ETL, in this study we doped the ZnO layer with aluminum (Al), then investigated the influence of AZO on the performance of inverted bulk heterojunction (BHJ) polymer solar cells based on poly [[4,8-bis [(2-ethylhexyl)oxy]benzo [1,2-b:4,5-b’]dithiophene-2,6-diyl]-[3-fluoro-2[(2-ethylhexyl)-carbonyl]-thieno-[3,4-b]thiophenediyl ]] (PTB7):[6,6]-phenyl C71 butyric acid methyl ester (PC₇₁BM). The measured conductivity of AZO was ~10⁻³ S/cm, which was two orders of magnitude higher than that of intrinsic ZnO (~10⁻⁵ S/cm). By decreasing the series resistance (R_s) in a device with an AZO layer, the short circuit current (J_sc) increased significantly from 15.663 mA/cm² to 17.040 mA/cm². As a result, the device with AZO exhibited an enhanced power conversion efficiency (PCE) of 8.984%.