Comparison of the band alignment of strained and strain-compensated GaInNAs QWs on GaAs and InP substrates

We present a comparison of the band alignment of the Ga_1−xIn_xN_yAs_1−y active layers on GaAs and InP substrates in the case of conventionally strained and strain-compensated quantum wells. Our calculated results present that the band alignment of the tensile-strained Ga_1−xIn_xN_yAs_1−y quantum wells on InP substrates is better than than that of the compressively strained Ga_1−xIn_xN_yAs_1−y quantum wells on GaAs substrates and both substrates provide deeper conduction wells. Therefore, tensile-strained Ga_1−xIn_xN_yAs_1−y quantum wells with In concentrations of x0.53 on InP substrates can be used safely from the band alignment point of view when TM polarisation is required. Our calculated results also confirm that strain compensation can be used to balance the strain in the well material and it improves especially the band alignment of dilute nitride Ga_1−xIn_xN_yAs_1−y active layers on GaAs substrates. Our calculations enlighten the intrinsic superiority of N-based lasers and offer the conventionally strained and strain-compensated Ga_1−xIn_xN_yAs_1−y laser system on GaAs and InP substrates as ideal candidates for high temperature operation.     

Fluid simulation of the pulsed bias effect on inductively coupled nitrogen discharges for low-voltage plasma immersion ion implantation

Planar radio frequency inductively coupled plasmas(ICP) are employed for low-voltage ion implantation processes,with capacitive pulse biasing of the substrate for modulation of the ion energy. In this work, a two-dimensional(2D) selfconsistent fluid model has been employed to investigate the influence of the pulsed bias power on the nitrogen plasmas for various bias voltages and pulse frequencies. The results indicate that the plasma density as well as the inductive power density increase significantly when the bias voltage varies from 0 V to-4000 V, due to the heating of the capacitive field caused by the bias power. The N+fraction increases rapidly to a maximum at the beginning of the power-on time, and then it decreases and reaches the steady state at the end of the glow period. Moreover, it increases with the bias voltage during the power-on time, whereas the N_2~+ fraction exhibits a reverse behavior. When the pulse frequency increases to 25 kHz and40 kHz, the plasma steady state cannot be obtained, and a rapid decrease of the ion density at the substrate surface at the beginning of the glow period is observed.     

超热电子在稠密等离子体中输运的混合粒子模拟方法

相对论激光等离子体相互作用以及所产生的带电粒子束在高密度等离子体中的输运行为非常重要.该物理问题的数值模拟研究仍面临技术挑战.本文介绍一种粒子/流体混合模拟方法.该方法中超热电子采用动力学方法描述,背景冷的稠密等离子体采用简化的流体方程描述,适合于超热电子密度远小于背景电子密度,超热电子能量远大于背景电子温度.我们的三维并行混合模拟程序HEETS的模拟结果表明：背景材料的电离和电阻率模型至关重要,将严重影响高能电子输运过程的模拟.     

Density functional study on the pressure profile of the inhomogeneous fluid mixture

By using the statistical mechanics, the pressure tensor for the multi component fluid mixture is derived. With the help of the classical density functional theory, profiles of the pressure components are calculated, and the influence of the total volume fraction, ratio of volume fraction, and size asymmetry on the pressure are studied. In addition, our results show that for the mixture confined in the hard cavity, the pressure shows a discontinuity near the cavity wall. However, in the soft cavity condition, the discontinuity disappears.     

X射线荧光光谱法直接测定油页岩中微量元素

本文提出用微晶纤维素与GSD等国家一级系列标样按不同比例混合制备标准样品。油页岩样品不经前处理,直接粉末法压片,经验系数法校正元素间效应,直接测定油页岩中V、Co、Ni、Cr、Cu、Zn、Sr、Ba和Rb等元素的X射线荧光光谱法。样品分析结果与ICP-AES法分析结果基本一致,本法具有简单、准确、实用的特点。     

基于光谱曲线响应特性的油膜厚度估计模型分析

如今,海上溢油事故频发,如何对溢油的油量进行估计,是一个重要课题。如果可以得到溢油量,那么对后续的处理以及损失的评估都会有较大的帮助。高光谱遥感技术的快速发展使对油膜厚度的定量估计成为可能。采用AvaSpec光谱仪测量不同厚度的油膜,然后对得到的光谱曲线的多种曲线特征进行提取,分析其与油膜厚度之间的关系。结果表明,油膜厚度与基于高光谱位置变量的Rg和Ro、三角植被指数的RDVI和TVI以及Haboudane关系式相关性较大。分别采用曲线拟合、BP神经网络和基于SVD的迭代方法建立油膜曲线特征与油膜厚度之间的预测关系,并以此对不同的油膜光谱曲线进行油膜厚度估计,对得到的结果进行精度检测和运行时间分析,最终得出对每个估计模型的分析评价。     

三维空间二阶精度流体体积界面重构方法

给出三维空间网格模板含81个单元的最小二乘流体体积界面重构方法,并和Youngs方法及网格模板含125个单元的最小二乘流体体积界面重构方法进行比较.静态和动态的测试例子均表明:该方法能精确重构任意方向的平面界面,对C²光滑曲面它能达到二阶收敛精度.和网格模板含125个单元的最小二乘流体体积界面重构方法相比,在达到同样网格精度的条件下,减少了计算量,节省了计算时间,提高了计算效率.     

原油含水率测量的光学计量仪

油井含水率是油田开发过程中的一个重要指标。光纤传感器具有体积小、重量轻、抗干扰能力强、实时、高效、准确等优点,将其应用于石油测井,有利于提高勘探效率。介绍测井应用中原油含水率计量仪的结构,分析了光纤传感器对混合液体含水率测量的基本原理。激光在弯曲光纤中的传输效率随外界混合介质折射率的变化而改变,根据光纤输出光功率的大小可以测量外界混合介质的组成成分。通过数值模拟,给出了光纤传感器中光束强度随混合液体含水率的变化现象,计算得到混合液体中含水率测量结果。结果表明,光纤传感器计量仪能实现0%～100%含水量的连续测量。最后基于数值模拟结果讨论了系统设计中的注意事项。     

NPB/Alq3有机量子阱光电特性研究

利用热蒸发的方法制备了有机量子阱发光器件和Alq3单层发光器件,其中NPB(N,N′-Di-[(lnaphthalenyl)-N,N′-diphenyl]-(1,1′-biphenyl)-4,4′-diamine)作垒层,Alq3(Tris-(8-quinolinolato) aluminum)作阱层,量子阱结构类似于无机半导体的Ⅱ型量子阱结构.实验发现有机量子阱发光器件结构中存在垒层向阱层的F(o)rster无辐射共振能量转移,具有良好的电流-电压特性,光谱的窄化及蓝移,并且光谱的蓝移程度随电压的增大而逐渐增强.     

Low temperature transport properties of thin SOI MOSFETs

Fabrication and 4.2 K mobility measurements of silicon-on-insulator (SOI) metal–oxide-field-effect-transistors are reported. The three sets of samples fabricated in this work include devices for which the SOI film thicknesses (t_SOI) are in the ranges of 10–15, 16–19 and 56–61 nm. The peak mobility of the devices that have the SOI film thickness above 16.5 nm is 1.9 m²/V s. The set of devices with thinnest channel (t_SOI=10–15 nm) suggest that the peak mobility decreases with decreasing t_SOI.