钴(Ⅱ)、镍(Ⅱ)-二甲酚橙多元络合物的光谱特性研究

研究了Co(Ⅱ)、Ni(Ⅱ)-NH3-XO混配络合物和Co(Ⅱ)、Ni(Ⅱ)-NH3-XO-CTMAB多元络合物的形成条件及吸收光谱特性,结果表明,在pH 9.5的氨性缓冲溶液中,[NH3]/[XO]值在100~400范围内所形成的钴、镍多元络合物的最大吸收波长分别为530和590 nm,钴的多元络合物在0~2.0 mg.L-1、镍的多元络合物在0~2.6 mg.L-1范围内符合比耳定律,相对标准偏差分别为2.1%和1.9%。     

悬浮液进样石墨炉原子吸收测定钒钛磁铁矿中痕量镍

样品粒度不超过３８μｍ，以２０％乙醇－１％硝酸水溶液为介质，用与样品基体类似的一种标准矿样进行校正，可消除基体效应。样品浓度不超过７３ｍｇ／１０ｍｌ，含镍０－３５０ｎｇ．ｍｌ＾－１范围内呈良好线性关系。     

Metal-to-Oxide Charge Transfer Observed by a Kelvin Probe Force Microscope

The charge transfer from a nanometer-sized transition metal particle to a catalyst support is thought to affect reactions over the metal surface. We propose the application of Kelvin probe force microscope, which is an extension of the atomic force microscope, to observe the charge transfer particle-by-particle. Our recent results on Na adatoms, Cl adatoms, Pt adatoms and particles, and Ni particles evaporated on TiO₂(110) are reviewed.     

Ni-catalyzed hydroboration and hydrosilylation of olefins with diboron and silylborane

Herein we report a Ni-catalyzed formal hydroboration of olefins, which afforded anti-Markovnikov-type alkylboranes with B₂pin₂ and a stoichiometric amount of water. Formal hydrosilylation using air- and moisture-sensitive silylboranes also proceeded under optimized conditions. The reaction with trans-stilbene and D₂O resulted in 1,2-H migration, which suggested that the reaction proceeded via β-hydride elimination and reinsertion mechanisms.     

The microstructures and electrical properties of Y-doped amorphous vanadium oxide thin films

One of promising approaches for further improving the sensitivity of microbolometer arrays with greatly-reduced pixel size is using the thermal-sensitive materials with higher performance. In this paper, Y-doped vanadium oxide (VO_x) thin films prepared by a reactively sputtering process exhibit enhanced performance for the microbolometer application compared with frequently-applied VO_x thin films. Both undoped and Y-doped VO_x thin films are amorphous due to the relatively low deposition temperature. Y-doped VO_x thin films exhibit smoother surface morphology than VO_x due to the restrained expansion of particles during depositions. Y-doping increases the temperature coefficient of resistivity by over 20% for the doping level of 1.30 at%. The change rate of resistivity, after aging for 72 h, of thin films was reduced from about 15% for undoped VO_x to 2% due to the introduction of Y. Moreover, Y-doped VO_x thin films have a low 1/f noise level as VO_x ones. Y-doping provides an attractive approach for preparing VO_x thermal-sensitive materials with enhanced performance for microbolometers.     

Segregation of Pt at clean surfaces of (Pt, Ni)3Al

Experimental evidence for surface segregation of Pt at (1 1 1) surfaces of ternary (Pt, Ni)₃Al alloys is presented, based upon Auger electron spectroscopy, low energy ion scattering, and angle-resolved X-ray photoelectron spectroscopy. Density functional calculations in the dilute limit confirm that Pt segregation is energetically favored.     

Photothermally controlled 50 mA gating in VO2-based planar device using NIR laser diode

By utilizing a near infrared laser diode as an excitation light source, we demonstrated a photothermally controlled current gating of 50 mA in a two-terminal planar device based on a vanadium dioxide (VO₂) thin film grown by a pulsed laser deposition method. The photothermally controlled on/off triggering of the device current was accomplished by controlling the output power of the laser beam that illuminated the VO₂ film. The transient responses of photothermally triggered currents were analyzed when periodical laser pulses from the laser diode stimulated the VO₂ device at a variety of pulse widths and repetition rates. A switching contrast between off-state and on-state currents was evaluated as ∼11905, and average rising and falling times were measured as ∼45 and ∼19 ms, respectively.     

Photocatalytic activity of divalent ion (copper,zinc and magnesium) doped NiAl2O4

Nickel aluminate (NiAl₂O₄) and doped nickel aluminate (Ni_1-xM_xAl₂O₄; M = Mg, Zn, Cu; x = 0.1) were prepared by sol-gel method using citric acid. The synthesized compounds were analyzed by various techniques such as powder XRD, FTIR, SEM-EDAX and UV-DRS. The lattice parameter was found to increase with the copper, zinc and magnesium doping in nickel aluminate. The band gap was decreased from 3.0 eV (NiAl₂O₄) to 2.9 (zinc doped), 2.7 eV (magnesium doped) and increased to 3.1 eV in the case of copper doping. The catalytic study was carried out for a cationic (methylene blue) and an anionic dye (methyl orange). The percentage degradation of methyl orange using Zn_0.1Ni_0.9Al₂O₄ and Mg_0.1Ni_0.9Al₂O₄ was found to be 92% (180 min) and 96% (90 min). 93% (120 min) and 97% (120 min) degradation of methylene blue was observed using zinc doped and magnesium doped nickel aluminate respectively. These results are comparatively higher than its parent analogue (94% (180 min) degradation against methyl orange and 91% (120 min) against methylene blue). Whereas the percentage degradation was found to be less in the case of Cu_0.1Ni_0.9Al₂O₄ (83% (180 min) against methyl orange and 90% (120 min) against methylene blue).