介质层厚对含负折射率介质Bragg微腔的影响

研究了介质层厚对含负折射率介质一维光子晶体Bragg微腔的缺陷模和双稳态的影响.在中心频率附近将传输矩阵各矩阵元采用泰勒级数展开并取一级近似,得到了缺陷模频率与介质层厚的关系式及品质因子公式.研究结果表明：一级近似法能很好地解释中心频率附近介质层厚对缺陷模频率的影响.理想Bragg微腔结构的缺陷模品质因子最大;递增正折射率介质层厚和增大缺陷层介质层厚、递减负折射率介质层厚及同时等量递减正和负折射率介质层厚,均可使缺陷模红移,双稳态阈值降低.     

负电性纳米银溶胶SERS活性及稳定性的比较研究

用单宁还原硝酸银可制得表面带负电的、对阳离子型分子具有较强SERS效应的纳米银。为了进一步测试负电性纳米银溶胶的SERS活性及稳定性,在室温下用制针剂的封装机将样品(old NCS)封装并保存。两年后与新制备的负电性纳米银溶胶(new NCS)比较,用透射电镜观测发现old NCS与new NCS相比银粒子尺寸增大;用紫外可见吸收光谱测定old NCS的吸收峰为431 nm,new NCS的吸收峰为418 nm,old NCS与new NCS相比吸收峰发生红移。为比较old NCS及new NCS的SERS活性选取阳离子型分子、中性分子及阴离子型分子作为测试分子,用拉曼光谱仪测试这些分子在两种纳米银上的SERS谱,结果发现,阳离子型分子碱性品红、中性分子吖啶橙在old NCS及new NCS上SERS较强,阳离子型分子亚甲基蓝在old NCS上与在new NCS上相比SERS较弱,阴离子型分子苯甲酸在old NCS及new NCS均未观察到SERS信号。     

Negative refraction and imaging properties of circular photonic crystals

The electromagnetic wave propagation in a two-dimensional (2D) circular photonic crystal (CPC) is investigated. The CPC structure is composed of air holes in the dielectric background material. The finite element method is used to study the optical and propagating properties of the CPC slab. Numerical simulations show that negative refraction and near-field imaging can appear in a 2D CPC slab. We also find that the high-symmetry CPC slab possesses an optics axis along the vertical direction intersecting the symmetric center. As a result, the CPC slab can exhibit an excellent imaging performance when a source is placed on the optical axis.     

Negative refractive index in chiral spiral metamaterials at terahertz frequencies

A three-dimensional chiral metamaterial consisting of arrays of the multi-layered mutually twisted metallic spirals is proposed. We theoretically demonstrate such a chiral spiral structure exhibiting negative refractive index at terahertz frequencies. The chirality with varied refractive index can be obtained by change of configurations of the structure. The presented design offers flexibility for investigation of electromagnetic properties of chiral metamaterials in the terahertz regime and thus leads to a unique route to terahertz device applications.     

Triple negative permeability band in plasmon-hybridized cut-wire-pair metamaterials

We expand the picture of plasmon hybridization in metamagnetic structure via numerically studying the electromagnetic coupling in the metallic cut-wire-pair super cells. It is shown that a triple negative permeability band can be achieved by systematically controlling the plasmon hybridization in such the structure. The corresponding transmission properties as well as the electromagnetic responses of the plasmon-hybridized structures were presented by using the finite integration technique simulations. Our results would reveal a promising design to obtain the multiple negative refractions based on the combination of hybridized cut-wire-pairs and continuous wires.     

355nm激光曝光SU-8胶的XPS谱和FT-IR谱研究

SU-8光胶因具有良好的光刻性能,并可获得稳定的高深宽比而在微加工领域得到了广泛的应用。众多研究采用不同的光源对其进行了多种光刻研究,本文应用355nm激光对SU-8胶进行曝光,分别采用XPS谱和FT-IR谱分析了SU-8胶与激光相互作用过程中,355nm激光对SU-8胶的作用以及反应前后主要成分含量、分子结构的变化,初步探讨了SU-8胶中激光曝光能量与透入深度的关系。     

Materials with a desired refraction coefficient can be made by embedding small particles

A method is proposed to create materials with a desired refraction coefficient, possibly negative one. The method consists of embedding into a given material small particles. Given n₀(x), the refraction coefficient of the original material in a bounded domain , and a desired refraction coefficient n(x), one calculates the number N(x) of small particles, to be embedded in D around a point xD per unit volume of D, in order that the resulting new material has refraction coefficient n(x).     

Data and modeling of negative ion transport in gases of interest for production of integrated circuits and nanotechnologies

We review techniques to prepare, evaluate and apply sets of cross section and transport data for negative ions that are required for the modeling of collisional non-equilibrium plasmas used for processing of microelectronic circuits. We collect and discuss the transport coefficients and cross section sets.We have compiled data for negative ions in CF₄ and CF₄-related negative ions in rare gases. In addition, we consider data for F⁻ and CF₃⁻ in rare gases. Furthermore, we analyze the cross sections of halogen negative ions in rare gases and other molecules. This is followed by the data for SF₆ related ions in SF₆ and in rare gases. The cross section for scattering of O⁻ in O₂ has been derived from the transport data and used to make calculations of the transport properties. Finally we give a brief discussion of the availability of the data for H⁻ ions in H₂. We have derived cross sections in several cases but the basic aim is to show the basic features of transport coefficients. In particular we discuss the need to represent properly some details such as the non-conservative nature of transport coefficients and the anisotropy of diffusion. Application of approximate theories and representations of cross sections are also discussed.     

Fundamentals and applications of ion-ion plasmas

Ion-ion plasmas can form in the late afterglow of pulsed discharges or downstream of continuous wave discharges in electronegative gases. In ion-ion plasmas, negative ions replace electrons as the negative charge carriers. In the absence of electrons, ion-ion plasmas behave quite differently compared to conventional electron-ion plasmas. Application of a radio frequency bias to a substrate immersed in an ion-ion plasma can be used to extract alternately positive and negative ions, thereby minimizing charging on device features during micro-device fabrication. Ion-ion plasmas are also important in negative ion sources, dusty plasmas, and the D-layer of the earth's atmosphere.     

Characterization of the morphology and composition of commercial negative resists used for lithographic processes

We present a spectroscopic and microscopic characterization of the chemical composition, structure, and morphology of two commercial negative resists using Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). For this purpose, films of a novolak-based resist (ma-N 2400) and hydrogen silsesquioxane (HSQ) are treated under different conditions (temperature, deep ultraviolet (DUV) exposure, CHF₃ plasma). Topographic AFM images show that both heating and DUV exposure strongly affect the surface morphology of as-prepared ma-N 2400 resist films. These different treatment conditions also lead to decreasing roughnesses, which indicates structural reorganization. Furthermore, the decrease of the photoactive compound (bisazide) in the ma-N 2400 resist films, observed in FTIR spectra, suggests cross-linking of the resist after CHF₃ plasma treatment, heating, or DUV exposure. XPS measurements on different CHF₃ plasma-treated surfaces reveal that a structurally homogeneous fluorine-containing polymer is generated that is responsible for an enhanced etch resistance. FTIR measurements of HSQ films show a correlation between the degree of HSQ cross-linking and baking time.