Crystallizable Polyphenylacetylene-Preparation and Solution Properties

The molecular weight distribution (MWD) of crystallizable polyphenylacetylene prepared near room temperature in the presence of ferric acetylacetonate and triethylaluminum was determined through use of fractions characterized by vapor pressure osmometry and gel permeation chromatography (GPC). The number- and weight-average molecular weights (M _n and M _w) are both less than the molecular weight corresponding to the maximum of the weight distribution function, which lacks a high molecular weight tail. M _wandM _n is less than is consistent with models allowing for chain termination characteristic of vinyl polymers. GPC elution volumes are much less than those characteristic of polystyrene of similar molecular weight, and the Mark-Houwink exponent is high (2.4 for M _v 4800 to 6800). These data indicate more rodlike behavior than for polystyrene of equivalent molecular weight. The MWD and other data suggest intramolecular chain termination, possibly associated with the molecule's tendency to form paramagnetic defect states.     

Au-MgB2-Au纳米结点的负微分电阻效应

运用密度泛函理论结合非平衡格林函数的方法对MgB2直线原子链与两半无限Au（100）电极构成纳米结点的电子输运特性进行了第一性原理计算．在模拟Au-MgB2-Au纳米结点的拉伸过程中,计算了结点在不同距离下的结合能与电导．结果发现结点的Au-B键长为1．90A,B-Mg键长为2．22A时,结合能最大,结构最稳定,此时结点平衡电导为0．51G0（G0=2e^0／h）．通过计算投影态密度发现电子通过结点时主要是通过B、Mg原子的px和py电子轨道形成的π键进行传输的．在-1．5～1．5V的电压范围内,结点的电流-电压近似为线性关系,表现出类似金属的导电性质,而当正负电压高于15V时,电流对称性逐渐减小,即存在负微分电阻效应,从不同电压下透射谱的变化对负微分电阻现象进行了分析与讨论．     

Zn(NCN)单轴的负热膨胀性及机理研究

负热膨胀(NTE)是一种反常的物理现象, 已在合金和框架结构化合物等材料中被观察到, 但NTE材料的种类仍然有限. 本文合成了一种单轴NTE材料Zn(NCN), 该材料在c轴方向及在100~475 K下的热膨胀系数为-3.35×10^?6 K^?1, 而a轴和b轴方向则呈低热膨胀性, 体积具有低的热膨胀系数[6.13×10^?6 K^?1(100~475 K)]. 通过同步辐射X射线衍射、 扩展X射线吸收精细结构和拉曼光谱等方法, 研究了Zn(NCN)的NTE机理. 结果表明, Zn—N键具有明显的横向振动, 一些低频振动模Grüneisen参数为负值. 直接的实验证据表明, N=C=N的横向振动以及准刚性ZnN₄四面体的耦合旋转和扭摆导致了c轴方向的NTE.     

冰冻人血清中尿酸标准物质复制的定值EI北大核心CSCD

为了满足该标准物质的需求,进行了第二次尿酸血清标准物质的复制。针对复制的尿酸血清标准物质,基于单四极杆质谱的液相色谱-同位素稀释质谱法(LC-IDMS),用乙腈沉淀法去除蛋白质,BEH C18色谱柱和电喷雾离子源负离子模式(ESI^(-)),同位素稀释的单点校准法进行定值、均匀性检验、稳定性检验以及不确定度评定等研究。此定值方法经过CCQM-K109(血清中尿酸分析)国际关键比对进行验证。复制的2种不同浓度水平尿酸(肾病患者和正常人)血清标准物质的定值结果分别为(73.5±1.3)μg/g,(47.5±1.1)μg/g,其均匀性和稳定性评估结果良好。     

Negative refraction and imaging of acoustic waves in a two-dimensional square chiral lattice structure

The negative refraction behavior and imaging effect for acoustic waves in a kind of two-dimensional square chiral lattice structure are studied in this paper. The unit cell of the proposed structure consists of four zigzag arms connected through a thin circular ring at the central part. The relation of the symmetry of the unit cell and the negative refraction phenomenon is investigated. Using the finite element method, we calculate the band structures and the equi-frequency surfaces of the system, and confirm the frequency range where the negative refraction is present. Due to the rotational symmetry of the unit cell, a phase difference is induced to the waves propagating from a point source through the structure to the other side. The phase difference is related to the width of the structure and the frequency of the source, so we can get a tunable deviated imaging. This kind of phenomenon is also demonstrated by the numerical simulation of two Gaussian beams that are symmetrical about the interface normal with the same incident angle, and the different negative refractive indexes are presented. Based on this special performance, a double-functional mirror-symmetrical slab is proposed for realizing acoustic focusing and beam separation.     

SU-8光刻胶应变分布光学全场检测方法

由于SU-8光刻胶的内应力将会影响高深宽比结构的全金属光栅的制作质量,本文针对近年来SU-8光刻胶应力测量困难的情况,提出了一种基于激光剪切散斑干涉技术的SU-8光刻胶应变分布测量的新方法。该方法通过对被测胶体加载前后两幅干涉图像的处理,直接得到被测胶体结构的全场应变分布情况,由胶体的应变变形数据即可反映出内应力的变化和分布趋势。同时使用ANSYS有限元分析软件对同一被测胶体进行应变仿真模拟研究,获得胶体结构的变形场仿真数据。组建了实验系统,进行了实验验证,结果表明:实际测量变形量约为1.189μm,仿真的最大变形量为1.088μm,测量误差在允许范围内,且测量的形变趋势与仿真模拟结果相一致,表明激光剪切散斑干涉技术可应用于SU-8光刻胶的应变分布全场无损检测。     

A domain decomposition method for three species modeling of multi-electrode negative corona discharge – With applications to electrostatic precipitators

The negative corona discharge problem for multi-electrode geometries is modeled by a three species model. The equations are solved using domain decomposition, by recognizing that multiple species are only present in a small part of the domain, and hence only need to be incorporated locally in the model.The method is applied to an industrially relevant three wire electrostatic precipitator geometry. The calculated current density is in good agreement with experimental data. To further illustrate applications of the three species solution, it is used for coupled particle, fluid, and electrostatic simulations to analyze particle collection properties.     

A scheme for a topological insulator field effect transistor

We propose a scheme for a topological insulator field effect transistor. The idea is based on the gate voltage control of the Dirac fermions in a ferromagnetic topological insulator channel with perpendicular magnetization connecting to two metallic topological insulator leads. Our theoretical analysis shows that the proposed device displays a switching effect with high on/off current ratio and a negative differential conductance with a good peak to valley ratio.     

Modulating microstructure and optical properties of hydrogenated nanocrystalline silicon photovoltaic materials prepared under hydrogen diluted silane PECVD by various DC bias

Hydrogenated nanocrystalline silicon (nc-Si:H) thin films were fabricated by plasma enhanced chemical vapor deposition under the various negative substrate bias voltages with hydrogen as a diluent of silane. The microstructure and optical properties of nc-Si:H thin films were studied by Raman scattering spectroscopy, X-ray diffraction (XRD), transmission electron microscopy, and optical transmission spectroscopy. Raman spectra and XRD pattern reveal that applying negative bias voltages at the moderate level favors the enhancement of crystalline volume fraction, increase of crystallite sizes and decrease of residual stress. We also demonstrated that the negative direct current bias can be used to modulate the volume fraction of voids, refractive index, absorption coefficient, compactness and ordered degree of nc-Si:H films. It is found that the film deposited at −80 V shows not only high crystallinity, size of crystallite, and static index n₀ but also low residual stress and volume fraction of voids. Furthermore, the microstructural evolution mechanism of nc-Si:H thin films prepared at different bias voltages is tentatively explored.     

Observation of room temperature negative differential resistance in solution synthesized ZnO nanorod

We report the observation of negative differential resistance (NDR) in solution synthesized ZnO nanorod. The ZnO nanorod was fabricated as a two terminal planar device using lithographically patterned Au electrodes. The measured current–voltage response of the device has shown a negative differential resistance behavior. The peak-to-valley current ratio of the NDR is found to be greater than 4. The mechanism of this observed NDR effect has been explained based on charge trapping and de-trapping at the nanoscale contacts. It is the first observation of negative differential resistance effect in solution synthesized ZnO nanorod.