α-Fe2O3-In2O3 mixed oxide nanoparticles synthesized under hydrothermal supercritical conditions

α-Fe₂O₃-In₂O₃ mixed oxide nanoparticles system has been synthesized by hydrothermal supercritical and postannealing route, starting with (1−x)Fe(NO₃)₃·9H₂O·xIn(NO₃)₃·5H₂O aqueous solution (x=0-1). X-ray diffraction and Mössbauer spectroscopy have been used to study the phase structure and substitutions in the nanosized samples. The concentration regions for the existence of the solid solutions in the α-Fe₂O₃-In₂O₃ nanoparticle system together with the solubility limits of In³⁺ ions in the hematite lattice and of Fe³⁺ ions in the cubic In₂O₃ structure have been evidenced. In general, the substitution level is considerably lower than the nominal concentration x. A justification of the processes leading to the formation of iron and indium phases in the investigated supercritical hydrothermal system has been given.     

Hg1-xCdxTe/Cd1-zZnzTe的X射线反射率及半峰全宽的动力学研究

X射线衍射摇摆曲线的计算机模拟是一种获得材料晶体质量参量的有效方法，其中材料本征摇摆曲线的计算是计算机模拟的基础。用X射线动力学理论计算了Hg1-xCdxTe和Cd1-zZnzTe本征反射率曲线，并研究了组分、膜厚分别对本征反射率和半峰全宽的影响。结果表明Hg1-xCdxTe和Cd1-zZnzTe的本征反射率和半峰全宽与材料组分和厚度有明显的依赖关系，且该依赖关系取决于X射线在材料中的散射和吸收的相对强弱。薄膜的厚度也是直接影响本征摇摆曲线峰形、半峰全宽和反射率的重要因素，当薄膜厚度小于穿透深度时，表征本征反射率曲线的各个参量均与薄膜厚度有直接的关系。对于(333)衍射面，碲镉汞材料厚度大于7μm后，本征反射率和半峰全宽将不再发生明显变化。     

Precise measurement of hyperfine structure in the state of Rb

We demonstrate a technique to measure hyperfine structure using a frequency-stabilized diode laser and an acousto-optic modulator locked to the frequency difference between two hyperfine peaks. We use this technique to measure hyperfine intervals in the 5 P _3/2 state of ⁸⁵Rb and obtain a precision of 20 kHz. We extract values for the magnetic-dipole coupling constant A = 25.038(5) MHz and the electric-quadrupole coupling constant B = 26.011(22) MHz. These values are a significant improvement over previous results. Received 6 March 2003 Published online 15 April 2003     

Dielectric properties of europium-indium oxide solid solution films prepared on Si (100) substrates

Thin Eu-In solid solution oxide films (SS) were grown on Si (P) substrates to form MOS devices. The samples were characterised by X-ray fluorescence and X-ray diffraction techniques. The ac-conductance and capacitance of the devices were studied as a function of frequency in the range 500 Hz to 100 kHz, temperature in the range 293-400 K and gate voltage. The investigation established that: (1) the prepared SS exhibit a sudden reversible structural change at about 370 K, (2) the frequency dependence for f>10 kHz of the ac-conductivity and capacitance of the insulator at room temperature is controlled by the ‘corrected barrier hopping’ CBH model, (3) the temperature dependence of the ac-conductance which shows a small activation energy characterises the hopping process of current carriers between equilibrium sites, and (4) the prepared transparent SS have a sufficiently high relative permittivity ?, around 30, which suggests they are promising candidates for high-? dielectric applications.     

Solid state phase equilibria in the Gd-Si-B system at 1270 K

Solid state phase equilibria in the ternary Gd-Si-B phase diagram have been proposed at 1270 K using X-ray diffraction, scanning electron microscopy and electron probe microanalysis. Prior to this work, the binary systems Gd-B, Gd-Si and Si-B have also been reinvestigated. The main characteristic of the ternary diagram is the occurrence of two new ternary compounds Gd₅Si₂B₈ and Gd₅Si₃B_0.64. The former crystallizes in tetragonal symmetry, space group P4/mbm with unit cell parameters a=7.2665(3), c=8.2229(7) Å, the second one presents hexagonal symmetry, space group P6₃/mcm with unit cell parameters a=8.5080(4),c=6.4141(2) Å. The X-ray structures of the two structurally related phases Gd₅Si₃B_0.64 and host binary Gd₅Si₃ have been refined from three-dimensional single-crystal intensity data to the final R values of 0.036 (R_w=0.046) and 0.046 (R_w=0.055) for 457 and 401 reflections, respectively with [F>4σ(F)]. Both structures exhibit the Mn₅Si₃-type structure, with in addition for Gd₅Si₃B_0.64 a partial occupancy by boron of the normally vacant interstitial site at the center of the Gd₆ octahedron, which corresponds to the origin of the unit cell. Bonding between the interstitial boron atoms and the gadolinium ones forming the Gd₆B polyhedra is indicated by the decrease in the corresponding Gd-Gd distances and consequently in the unit cell volume. Finally, the Gd-Si-B phase diagram is compared with the previously reported Er-Si-B, at 1070 K.     

Studies on recoil proton tracks in NTA films with the T(d,n)He reaction

Recoil proton tracks in nuclear emulsion are counted by scanning them using strip, square or circular field of view of optical microscope. In this paper, the overestimate due to the edge effects in counting recoil proton tracks at different neutron energies produced from the T(d,n)⁴He reaction has been determined by measuring the true track density in NTA film. The overestimate has also been calculated using the measured value of the mean projected track length (L) in the film. The percentage of measured overestimates has been compared with those obtained by calculation and the results agree reasonably well. Fading effect in NTA film has been studied and found to be 22% more in the summer than in the winter season. A great reduction in fading rate could be achieved if the films are desiccated and sealed in highly pure dry nitrogen maintained at an over-pressure of 1000 Pa to reduce water vapour ingress. After the edge effect correction, the sensitivity of NTA film has been calculated from (1.72±0.08)×10⁻³ tracksn⁻¹ to (1.97±0.16)×10⁻³ tracksn⁻¹ in the neutron energy ranges from 15.91 to 18.88 MeV. The response was found to be from 0.24±0.02 trackscm⁻² permSv to 0.26±0.01 trackscm⁻² permSv in the same energy range.     

CRYSTAL AND MOLECULAR STRUCTURE OF A NOVEL Au Ag SUPRACLUSTER COMPOUND [Au_13Ag_12(μ-Br)_4(μ_3-Br)_2(Ph_3P)_10-

<正> [Au13Ag12(μ-Br)1(μ3-Br)2 (Ph3P)10Br2] Br, monoclinic. space group C2/m, a = 36. 496(17). b=16. 878(7), c-=19. 772(9) A , β=99. 87(5)°, V=11998. 9 A3.Z=2. The final R(Rw) is 0. 097(0. 109) for 3779 reflections with I>3σ(I). The structure can he considered as two icosahedral cluster units (AurAg6) sharing one vertex and linked hy six bromine atoms. The Au - Au, Au - Ag. and Ag-Ag distances fall in the ranges of 2. 69-2. 96. 2. 84-3. 02. and 2. 92-3. 26 A, respectively.     

类锂铝复合机制产生X光激光的等离子体状态

本文从速率方程出发,讨论了类锂铝复合等离子体的激发态结构,衰减常数,反转率和小信号增益等表征介质增益特性的物理量以及它们随电子温度,电子密度和光子逃逸几率的变化。找到了进行类锂铝离子通过复合机制产生X光激光设计应创造的等离子体状态目标区域。还讨论了这些物理量随原子序数变化的定标律。     

Darstellung und Molekülstrukturen von oligofunktionalen Dirheniumcarbonylderivaten aus Dirheniumnonacarbonylphosphan

Preparation and Molecular Structures of Oligofunctional Dirhenium Carbonyl Derivatives from Dirhenium Nonacarbonylphosphane Starting with dirheniumdecacarbonyl, one CO-Ligand was eliminated oxidatively and substituted by the labile acetonitrile ligand. As an intermediate eq-Re₂(CO)₉NCCH₃ was received. The reaction of this labilised carbonyl with tris(trimethylsilyl)phosphine and subsequent methanolysis gave ax-Re₂(CO)₉PH₃, which was isolated and characterized for the first time. Photochemical and thermal reaction of ax-Re₂(CO)₉PH₃ led to the new bi- and trinuclear complexes Re₂(μ-H)(μ₃-PHRe(CO)₅)(CO)₈, Re₂(μ-PH₂)₂(CO)₈ and Re₂(μ-H) · (μ-PH₂)(CO)₈, which were characterized by IR-, ¹H- and ³¹P-NMR spectroscopy. The structures of ax-Re₂(CO)₉PH₃, Re₂(μ-H)(μ₃-PHRe(CO)₅)(CO)₈ and Re₂(μ-PH₂)₂(CO)₈ were confirmed by single-crystal X-ray analysis. ax-Re₂(CO)₉PH₃ has a very short Re? P bond length of 228(2) pm.     

火焰原子吸收法测定人体胆结石中的铜、锌、钙、镁

本文介绍了火焰原子吸收法测定人体胆结石中铜、锌、钙、镁元素含量的测试条件及介质的影响，测试结果表明该方法具有较好的准确度和精密度，适合于医学临床应用。