A bound on the total size of a cut cover

A cycle cover (cut cover) of a graph G is a collection of cycles (cuts) of G that covers every edge of G at least once. The total size of a cycle cover (cut cover) is the sum of the number of edges of the cycles (cuts) in the cover.We discuss several results for cycle covers and the corresponding results for cut covers. Our main result is that every connected graph on n vertices and e edges has a cut cover of total size at most 2e-n+1 with equality precisely when every block of the graph is an odd cycle or a complete graph (other than K₄ or K₈). This corresponds to the result of Fan [J. Combin. Theory Ser. B 74 (1998) 353-367] that every graph without cut-edges has a cycle cover of total size at most e+n-1.     

Synthesis of ZnAl2O4/α-Al2O3 complex substrates and growth of GaN films

With the solid phase reaction between pulsed-laser-deposited (PLD) ZnOfilm and α-Al2O3 substrate, ZnAl2O4/α-Al2O3 complex substrates were synthesized. X-ray diffraction (XRD) spectra show that as the reaction proceeds, ZnAl2O4 changes from the initial (111)-oriented single crystal to poly-crystal, and then to inadequate (111) orientation. Corresponding scanning electron microscope (SEM)images indicate that the surface morphology of ZnAl2O4 transforms from uniform islands to stick structures, and then to bulgy-line structures. In addition, XRDspectra present that ZnAl2O4 prepared at low temperature is unstable at the environment of higher temperature. On the as-obtained ZnAl2O4/α-Al2O3 substrates, GaN films were grown without any nitride buffer using light-radiation heating low-pressure MOCVD (LRH-LP-MOCVD). XRD spectra indicate that GaN film on this kind of complex substrate changes from c-axis single crystal to poly-crystal as ZnAl2O4 layer is thickened. For the single crystal GaN, its full width at half maximum (FWHM) of X-ray rocking curve is 0.4°. Results indicate that islands on thin ZnAl2O4 layer can promote nucleation at initial stage of GaN growth, which leadsto the (0001)-oriented GaN film.     

用于同步辐射光源的成像板粉末衍射系统

报道了我们研制的一套成像板粉末衍射装置,对其误差来源进行了详细的分析讨论,并与衍射仪进行了比较.该装置的半径为143.3mm,最大测量角度范围不160°，最大角度(2q )偏差小于0.03°,这些性能指标已被实验所证实,完全可应用于粉末衍射全谱的测量.     

系列类立方烷型Fe4S4簇合物的XPS分析

对7种类立方烷型Fe_4S_4簇合物进行了XPS分析,得到了中心离子Fe的价态,给出了系列Fe_4S_4中骨架硫的结合能,由峰合成结果给出各种S、N的比例与按结构式计算的结果相同。     

Flame Temperature Effect on the Structure of SiC Nanoparticles Grown by Laser Pyrolysis

Small SiC nanoparticles (10 nm diameter) have been grown in a flow reactor by CO₂ laser pyrolysis from a C₂H₂ and SiH₄ mixture. The laser radiation is strongly absorbed by SiH₄ vibration. The energy is transferred to the reactive medium and leads to the dissociation of molecules and the subsequent growth of the nanoparticles. The reaction happens with a flame. The purpose of the experiments reported in this paper is to limit the size of the growing particles to the nanometric scale for which specific properties are expected to appear. Therefore the effects of experimental parameters on the structure and chemical composition of nanoparticles have been investigated. For a given reactive mixture and gas velocity, the flame temperature is governed by the laser power. In this study, the temperature was varied from 875°C to 1100°C. The chemical analysis of the products indicate that their composition is a function of the temperature. For the same C/Si atomic ratio in the gaseous phase, the C/Si ratio in the powder increases from 0.7 at 875°C up to 1.02 at 1100°C, indicating a growth mechanism limited by C₂H₂ dissociation. As expected, X-ray diffraction has shown an improved crystallisation with increasing temperature. Transmission electron microscopy observations have revealed the formation of 10 nm grains for all values of laser power (or flame temperature). These grains appear amorphous at low temperature, whereas they contain an increasing number of nanocrystals (2 nm diameter) when the temperature increases. These results pave the way to a better control of the structure and chemical composition of laser synthesised SiC nanoparticles in the 10 nm range.     

MgO films grown on yttria-stabilized zirconia by molecular beam epitaxy

MgO films were grown on (0 0 1) yttria-stabilized zirconia (YSZ) substrates by molecular beam epitaxy (MBE). The crystalline structures of these films were investigated using X-ray diffraction and transmission electron microscopy. Growth temperature was varied from 350 to 550 °C, with crystalline quality being improved at higher temperatures. The MgO films had a domain structure: (1 1 1)[1 1 2¯]_MgO(0 0 1)[1 0 0]_YSZ with four twin variants related by a 90° in-plane rotation about the [1 1 1]_MgO axis. The observed epitaxial orientation was compared to previous reports of films grown by pulsed laser deposition and sputtering and explained as resulting in the lowest interface energy.     

Synthesis and properties of tricyclo[6.4.1.0]trideca-1,3(6),7,9,11-pentaene

A new cyclobutene-fused 1,6-methano[10]annulene was synthesized by pyrolysis of the sulfone and sulfinate adducts of 3,4-bis(methylene)-1,6-methano[10]annulene and its physical and chemical properties were disclosed.     

Optical properties of a high-efficiency glass ceramic X-ray storage phosphor

The turbidity, photoluminescence, and photo-stimulated luminescence (PSL) of fluorozirconate glass containing barium chloride nano- and micro-crystals have been measured for samples prepared by isochronal (70 min) annealing over a temperature range of 220–283°C, and correlated with the microstructure as determined by X-ray diffraction measurements. Crystallization of hexagonal phase barium chloride commences at around 220°C, but until 275°C the material retains excellent transparency although it displays negligible PSL. Between 275°C and 277°C, the hexagonal phase converts to the orthorhombic phase, the transparency abruptly decreases, and the PSL rises to a value of around 13% of that found for the commercial storage phosphor BaFBr:Eu. For a slightly higher temperature of 280°C, new phases appear which correspond to the onset of bulk crystallization, and at 283°C the relative PSL rises to 33%, while the transparency falls further. The trade-off between optical transparency and PSL over this narrow temperature window for X-ray imaging plate applications is briefly discussed.     

New developments in X-ray storage phosphors

We found a significant PSL effect in Eu²⁺-doped fluorozirconate glasses (ZBLAN) which were additionally doped with Br⁻ or Cl⁻ ions. The PSL is attributed to the characteristic emission of Eu²⁺ present in nano-crystallites of BaBr₂ or BaCl₂, which form in the glass upon annealing. The metastable hexagonal form of BaX₂ (X=Br,Cl) is always formed first before it is converted into the stable orthorhombic form. The particle size increases upon annealing and so does the PSL efficiency of the glass ceramic. However, there is a saturation of the PSL efficiency, which is for Br⁻ doping about 9% and for Cl⁻-doping about 80% of the Eu-doped BaFBr standard. The particle size was determined by transmission electron microscopy (TEM). The TEM results show a clear tendency for bigger particles for longer annealing at the expense of its number. The particle size for the most efficient phosphor is about 100 nm.     

Electrode “edge effects” analyzed by the Green function method

An exact method based on Green's equation is used to find the diffusion-controlled faradaic current for certain electrode geometries that incorporate edges and vertices. Thereby the magnitudes of the time-independent current density associated with angled electrode/electrode and electrode/insulator junctions are calculated. As well, the square-root-of-time-dependent currents associated with vertices, receive attention. These terms extend to longer times, the Cottrell formulation appropriate for short times. Though most of the problems solved here have been tackled previously, the novel Green function approach is shown to be straightforward and intuitive.