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171.
We study GaN/AlN Quantum Dot (QD) superlattices utilizing the STREL environment which allows the building of atomistic models, relaxation of the structures, the calculation of the electronic states and optical transitions and the visualization of the results. The forces are calculated using an appropriate Keating or Stillinger–Weber interatomic potential model and the electronic states and optical transitions using a tight-binding formulation which is economical and produces realistic electronic properties. The relaxed structure has strains mainly in the GaN region which are compressive and small tensile strains in the AlN region, mainly below the QD. In the calculation of the electronic states and of the optical transitions the strains are included realistically at the atomistic level. The study of the wavefunctions close to the fundamental gap show how these strains influence the form and spatial extent of the wavefunction. Very close to the fundamental gap the valence and some conduction states are confined in the QD and have considerable oscillator strength. 相似文献
172.
S. Joblot Y. Cordier F. Semond S. Chenot P. Venngus O. Tottereau P. Lorenzini J. Massies 《Superlattices and Microstructures》2006,40(4-6):295
We report the realization of an AlGaN/GaN HEMT on silicon (001) substrate with noticeably better transport and electrical characteristics than previously reported. The heterostructure has been grown by molecular beam epitaxy. The 2D electron gas formed at the AlGaN/GaN interface exhibits a sheet carrier density of 8×1012 cm−2 and a Hall mobility of 1800 cm2/V s at room temperature. High electron mobility transistors with a gate length of 4 μm have been processed and DC characteristics have been achieved. A maximum drain current of more than 500 mA/mm and a transconductance gm of 120 mS/mm have been obtained. These results are promising and open the way for making efficient AlGaN/GaN HEMT devices on Si(001). 相似文献
173.
Arne Barinka Stephan Dahlke Wolfgang Dahmen 《Advances in Computational Mathematics》2006,24(1-4):5-34
Recently adaptive wavelet methods have been developed which can be shown to exhibit an asymptotically optimal accuracy/work
balance for a wide class of variational problems including classical elliptic boundary value problems, boundary integral equations
as well as certain classes of noncoercive problems such as saddle point problems. A core ingredient of these schemes is the
approximate application of the involved operators in standard wavelet representation. Optimal computational complexity could
be shown under the assumption that the entries in properly compressed standard representations are known or computable in
average at unit cost. In this paper we propose concrete computational strategies and show under which circumstances this assumption
is justified in the context of elliptic boundary value problems.
Dedicated to Charles A. Micchelli on the occasion of his 60th birthday
Mathematics subject classifications (2000) 41A25, 41A46, 65F99, 65N12, 65N55.
This work has been supported in part by the Deutsche Forschungsgemeinschaft SFB 401, the first and third author are supported
in part by the European Community's Human Potential Programme under contract HPRN-CT-202-00286 (BREAKING COMPLEXITY). The
second author acknowledges the financial support provided through the European Union's Human Potential Programme, under contract
HPRN-CT-2002-00285 (HASSIP) and through DFG grant DA 360/4–1. 相似文献
174.
Chongjun Zhao Quanzhong Zhao Qitao Zhao Jianrong Qiu Congshan Zhu 《Applied Surface Science》2006,252(20):7415-7421
Au nanoparticles, which were photoreduced by a Nd:YAG laser in HAuCl4 solution containing TiO2 colloid and accompanied by the TiO2 particles, were deposited on the substrate surface. The film consisting of Au/TiO2 particles was characterized by the absorption spectra, scanning electron microscopy (SEM) and X-ray diffraction (XRD) analysis. The adhesion between the film and substrate was evaluated by using adhesive tape test. It was found that the presence of TiO2 dramatically enhanced the adhesion strength between the film and the substrate, as well as the deposition rate of film. The mechanism for the deposition of Au/TiO2 film was also discussed. 相似文献
175.
在s波超导体绝缘层dx2-y2波超导体结(sId)中,考虑到结界面粗糙散射,运用BogoliubovdeGennes(BdG)方程和FurusakiTsukada(FT)电流公式,计算超导结中的准粒子传输系数和直流Josephson电流.结果表明:sId超导结的直流Josephson电流随温度以及结两侧的相位差变化的关系曲线强烈地依赖于d波超导体的晶轴方位;结界面的粗糙散射对Josephson电流有抑制作用
关键词:
s/I/d超导结
dx2-y2波超导体
直流Josephson电流 相似文献
176.
载能离子穿过固体界面引起界面原子迁移使界面原子混合和物质成分变化,从而导致界面发生材料相变。简要介绍了载能离子辐照引起金属/绝缘体界面混合效应及相变现象的主要实验研究进展、低能离子和高能离子辐照引起金属/绝缘体界面现象差异,并对离子辐照引起界面混合及相变的机制进行了初步探讨。When penetrating an interface between two kind of solids, energetic ions can induce atomic diffusion at both sides of the interface and then result in intermixing, atom re-distribution or composition change, as well as phase transformation. Main progress on the study of intermixing and phase change at metal/insulator interface induced by energetic ion irradiations, the difference of phenomena occurred at metal/insulator interfaces induced by high-and low-energy ions were briefly reviewed. Furthermore, the possible mechanisms related to intermixing and phase change at metal/insulator interface produced by energetic ion irradiations were also discussed in short words. 相似文献
177.
采用低压金属有机化合物气相沉积法(LP-MOCVD)生长并制作了1.6—1.7μm大应变InGaAs/InGaAsP分布反馈激光器.采用应变缓冲层技术,得到质量良好的大应变InGaAs/InP体材料.器件采用了4个大应变的量子阱,加入了载流子阻挡层改善器件的温度特性.1.66μm和1.74μm未镀膜的3μm脊型波导器件阈值电流低(小于15mA),输出功率高(100mA时大于14mW).从10—40℃,1.74μm激光器的特征温度T0=57K,和1.55μm InGaAsP分布反馈激光器的特征温度相当.
关键词:
MOCVD
InGaAs/InGaAsP
应变量子阱
分布反馈激光器 相似文献
178.
以一维二次同余码(QCC)作为扩时模式,以光正交码(OOC)和QCC码作为频域跳频模式,通过时域和频域的组合,构造了适用于光码分多址(OCDMA)系统的QCC/QCC和QCC/OOC 2种跳频扩时码,并对码的容量及其相关性进行了分析。与一维QCC码相比,QCC/QCC跳频扩时码的容量扩大了p 1倍(p为码重),相关性得到改善,并且码字异相自相关限λa=1,互相关限λc=2;QCC/OOC跳频扩时码具有更大的码容量和更好的相关性,码字异相自相关限λa=0,所有码字按一定规律可分成p 1组(p为码重),每组内码字的互相关限λa=1,不同组间码字的互相关限λa=2。所得结果为光码分多址系统中跳频扩时码的构造提供了一种新的方法。 相似文献
179.
利用多靶磁控溅射技术制备了Au/SiO2纳米颗粒分散氧化物多层复合薄膜.研究了在保持Au单层颗粒膜沉积时间一定时薄膜厚度一定、变化SiO2的沉积时间及SiO2的沉积时间一定而改变薄膜厚度时,多层薄膜在薄膜厚度方向的微观结构对吸收光谱的影响.研究结果表明:具有纳米层状结构的Au/SiO2多层薄膜在560 nm波长附近有明显的表面等离子共振吸收峰,吸收峰的强度随Au颗粒的浓度增加而增强,在Au颗粒浓度相同的情况下,复合薄膜
关键词:
2纳米复合薄膜')" href="#">Au/SiO2纳米复合薄膜
多靶磁控溅射
吸收光谱
有效介质理论 相似文献
180.
采用UV/H2O2技术对污染水体中的MTBE进行了氧化降解试验,考察了不同MTBE初始浓度,不同H2O2浓度,不同pH值,不同波长的紫外光对降解效果的影响,以及不同Cl^-、HCO3^-浓度的抑制作用.结果表明,在室温条件下,当紫外光波长为254nm,H2O2为15mmol/L,pH为3.0时对起始浓度为1mmol/L的MTBE具有较好的降解效果;反应60min,MTBE去除率可达97.6%.实验证明,UV/H2O2氧化技术是降解MTBE的一种有效方法. 相似文献