一类拟线性次椭圆方程弱解的局部唯一性

In this note,we obtain some a-priori estimates for gradient of weak solutions to a class of subelliptic quasilinear equations constructed by Ho¨rmander’s vector fields,and then prove local uniqueness of weak solutions.A key ingredient is the estimated about kernel on metirc ＂annulus＂.     

光谱探针猩红S与牛血清白蛋白结合的发光光谱

利用荧光光谱和紫外吸收光谱,详细研究了不同温度下猩红S(PS)与牛血清白蛋白(BSA)的结合反应,发现PS对BSA的内源性荧光具有较强的猝灭作用,其猝灭机理属于静态猝灭,由此求得PS与BSA间的结合常数、结合位点数及热力学参数等.结果表明:PS与BSA之间形成了1:1稳定复合物,它们之间的作用力主要是静电引力.根据Fo...     

Dynamic bifurcation of a modified Kuramotoben Sivashinsky equation with higher-order nonlinearity

Under the periodic boundary condition, dynamic bifurcation and stability in the modified Kuramoto—Sivashinsky equation with a higher-order nonlinearity μ(u_x)^pu_xx are investigated by using the centre manifold reduction procedure. The result shows that as the control parameter crosses a critical value, the system undergoes a bifurcation from the trivial solution to produce a cycle consisting of locally asymptotically stable equilibrium points. Furthermore, for cases in which the distances to the bifurcation points are small enough, one-order approximations to the bifurcation solutions are obtained.     

Growth of gem-grade nitrogen-doped diamond crystals heavily doped with the addition of Ba（N3）2

Additive Ba(N 3) 2 as a source of nitrogen is heavily doped into the graphite-Fe-based alloy system to grow nitrogendoped diamond crystals under a relatively high pressure (about 6.0 GPa) by employing the temperature gradient method.Gem-grade diamond crystal with a size of around 5 mm and a nitrogen concentration of about 1173 ppm is successfully synthesised for the first time under high pressure and high temperature in a China-type cubic anvil highpressure apparatus.The growth habit of diamond crystal under the environment with high degree of nitrogen doping is investigated.It is found that the morphologies of heavily nitrogen-doped diamond crystals are all of octahedral shape dominated by {111} facets.The effects of temperature and duration on nitrogen concentration and form are explored by infrared absorption spectra.The results indicate that nitrogen impurity is present in diamond predominantly in the dispersed form accompanied by aggregated form,and the aggregated nitrogen concentration in diamond increases with temperature and duration.In addition,it is indicated that nitrogen donors are more easily incorporated into growing crystals at higher temperature.Strains in nitrogen-doped diamond crystal are characterized by micro-Raman spectroscopy.Measurement results demonstrate that the undoped diamond crystals exhibit the compressive stress,whereas diamond crystals heavily doped with the addition of Ba(N 3) 2 display the tensile stress.     

Research on high-voltage 4H-SiC P-i-N diode with planar edge junction termination techniques

The planar edge termination techniques of junction termination extension (JTE) and offset field plates and field-limiting rings for the 4H-SiC P-i-N diode were investigated and optimized by using a two-dimensional device simulator ISE-TCAD10.0. By experimental verification, a good consistency between simulation and experiment can be observed. The results show that the reverse breakdown voltage for the 4H-SiC P-i-N diode with optimized JTE edge termination can accomplish near ideal breakdown voltage and much lower leakage current. The breakdown voltage can be near 1650 V, which achieves more than 90 percent of ideal parallel plane junction breakdown voltage and the leakage current density can be near 3 × 10-5 A/cm2.     

Atomic N00N state generation in distant cavities by virtual excitations

A general scheme of generating N00N states of virtually-excited 2N atoms is proposed. The two cavities are fibre-connected with N atoms in each cavity. Although we focus on the case of N=2, the system can be extended to a few atoms with N>2. It is found that all 2N atoms can be entangled in the form of N00N states if the atoms in the first cavity are initially in the excited states and atoms in the second cavity are all in the ground states. The feasibility of the scheme is carefully discussed, it shows that the N00N state with a few atoms can be generated with good fidelity and the scheme is feasible in experiment.     

N9H9链状异构体的结构与稳定性的理论研究

采用密度泛函理论(DFT)B3LYP方法,在6-311＋＋G**基组水平上对N9H9可能存在的链状构型进行了几何优化,得到46种稳定链状异构体。应用自然键轨道理论NBO和分子中的原子理论AIM分析了这些化合物的成键特征和相对稳定性,G3MP2方法计算了各异构体的精确能量及在298K时的生成热ΔfHө(298K),并计算了由Peter Politzer等人所介绍的相对比冲量。研究结果表明：各异构体中N原子孤对电子与N＝N形成了p→π共轭作用是影响双键相邻的N－N键长变化的主要原因,并且对异构体的稳定性起着重要作用。所有异构体中N＝N位于链端的稳定性较差,其中B9最稳定, B6稳定性最差;C5是所有异构体中生成热最大的,也是相对比冲量最大的。     

取代基对N-H•••O=C氢键二聚体中氢键强度的影响

使用MP2方法研究了N-H•••O=C氢键二聚体的氢键强度,探讨了不同取代基对N-H•••O=C氢键强度的影响.研究发现,可以通过改变质子供体或受体分子上取代基的供电性或吸电性来调控氢键强度:乙基等供电子基团对N-H•••O=C氢键强度的调节作用不大;NO2和CN等强吸电子基团可极大地改变N-H•••O=C氢键强度;质子供体分子中的强吸电子基团如CN可使N-H•••O=C氢键强度增强多达4.6kcal/mol,质子受体分子中的强吸电子基团如NO2可使N-H•••O=C氢键强度减弱多达2.6kcal/mol.自然键轨道(NBO)分析表明,N-H•••O=C氢键强度越强,参与形成氢键的氢原子电荷越正,氧原子电荷越负,单体分子间电荷转移越多,N-H•••O=C氢键中氧原子孤对电子n(O)对N-H反键轨道σ*(N-H)的二阶稳定化能越大.     

气相中2Ca＋介入N2O与CO, N2O与H2反应的计算研究

本文采用密度泛函理论DFT-UB3LYP方法, 在6-311+G(2d, p)的基组下, 计算研究了气相中Ca+离子介入N2O (1∑+)和CO (1∑+) 与N2O (1∑+) 和 H2 (1∑+g)反应的微观机理. 报道了二重态势能面上各反应物、中间体和过渡态的构型特征及能量, 并用频率分析和内禀反应坐标（IRC）方法对过渡态进行了验证. 计算结果表明,金属离子参与N2O和CO与N2O和H2的反应都分两步进行, 其中Ca+离子对反应N2O (X1∑+) + CO (1∑+)生成N2 (X1∑+g) + CO2 (1∑+g)比较Fe+, Ir+, Pt+等的金属离子有良好的催化作用, 而对反应N2O (X1∑+) + H2 (1∑+g) → N2 (1∑+g) + H2O (1A1) 催化作用不是很好,N2、CaOH+和H是该反应的主要产物,与实验观测结果相符, 并通过对金属离子亲氧性（OA）的计算, 从热力学方面进一步说明主题反应的可行性.     

O2流量对磁控溅射N掺杂TiO2薄膜成分及晶体结构的影响

利用直流脉冲磁控溅射方法在室温下通过改变O₂流量制备具有不同晶体结构的N掺杂TiO₂薄膜,利用台阶仪、X射线光电子能谱仪、X射线衍射仪、紫外-可见分光光度计等设备对薄膜沉积速率、化学成分、晶体结构、禁带宽度等进行分析.结果表明:所制备的薄膜元素配比约为TiO_1.68±0.06N_0.11±0.01,N为替位掺杂,所有样品退火前后均未形成Ti—N相结构,N掺杂TiO₂薄膜的沉积速率、晶体结构等主要依赖于O₂流量.在O₂流量为2 sccm时,N掺杂TiO₂薄膜沉积速率相对较高,薄膜为非晶态结构,但薄膜内含有锐钛矿(anatase)和金红石(rutile)相晶核,退火后薄膜呈anatase和rutile相混合结构,禁带宽度仅为2.86 eV.随着O₂流量的增加,薄膜沉积速率单调下降,退火后样品禁带宽度逐渐增加.当O₂流量为12 sccm时,薄膜为anatase相择优生长,退火后呈anatase相结构,禁带宽度为3.2 eV.综合本实验的分析结果,要在室温条件下制备晶态N掺杂TiO₂薄膜,需在高O₂流量(＞10 sccn)条件下制备. 关键词： 2薄膜')" href="#">N掺杂TiO₂薄膜 磁控溅射 化学配比 晶体结构