de Haas–van Alphen effect in strongly correlated electron systems

We present the Fermi surface properties in strongly correlated electron systems of rare earth and uranium compounds via de Haas–van Alphen experiments. The conduction electrons with large cyclotron effective masses over 100m₀ (m₀: rest mass of an electron) are detected in CeRu₂Si₂, CeCoIn₅ and UPt₃. These electrons move slowly in the crystal. The topology of the Fermi surface and the cyclotron mass are compared to those of energy band calculations.     

钢中小角度晶界区的电子结构及掺杂效应

根据位错的弹性理论,建立了9Ni钢中53°掺杂小角度晶界的原子模型,利用Recursion方法,计算了杂质在53°小角度晶界典型环境中的能量和电子结构,由此得出,钢中小角度晶界的强度敏感地依赖于隔离杂质的类型,S,P杂质使晶粒间结合减弱,从而导致晶界疏松 ;相反,B,C,N则会使晶界间的结合加强.在所有的杂质中,B显示出独特的性质,在钢中B 不仅能增强晶界的结合,而且由于占位竞争效应会使其他杂质远离晶界,具有净化晶界的作用. 关键词： 小角晶界 杂质 占位竞争 晶界隔离     

Study of the ferrodistorsive orbital ordering in NaNiO2 by neutron diffraction and submillimeter wave ESR

NaNiO₂ has been studied by neutron-powder diffraction, magnetic susceptibility and submillimeter wave ESR. The monoclinic structure at room temperature is characterised by a ferrodistorsive orbital ordering due to the Jahn-Teller (JT) effect of the Ni³⁺ ions in the low spin state. NaNiO₂ undergoes a structural transition at around 480 K, above which the orbital ordering disappears. The high temperature phase is rhombohedral with the layered -NaFeO₂ structure ( space group). The magnetic susceptibility exhibits hysteresis and we observe a change of the Curie-Weiss law parameters above the JT transition. The anisotropy of the g-factor at 200 K can be attributed to the JT effect which favours the orbital occupation. Finally, the interplay between the magnetic and structural properties of NaNiO₂ and Li_1-xNi_1+xO₂ is discussed. Received 29 May 2000     

Entangling atoms in photonic crystals

We propose a method for entangling a system of two-level atoms in photonic crystals. The atoms are assumed to move in void regions of a photonic crystal. The interaction between the atoms is mediated either via a defect mode or via a resonant dipole-dipole interaction. We show that these interactions can produce pure entangled atomic states. We analyze the problem with parameters typical for currently existing photonic crystals and Rydberg atoms and we show that the atoms can emerge from photonic crystals in entangled states. Depending on the linear dimensions of the crystal we estimate that a pair of atoms entangled in a photonic crystal can be separated by tens of centimeters. Receive 11 June 1999 and Received in final form 4 October 1999     

存在固有线双折射光纤费尔德常数的测量

从理论上分析、计算了扭转光纤对小信号电流灵敏的影响，提出了一种新的更为简便的方法测量费尔德常数、并用实验验证。结果表明当光纤扭转率与固有线双折射的比值大于一定数值时，用本方法测量得到的费尔德常数值与理论值十分接近。这一方法为测量具有线双折射光纤的费尔德常数提供了一种新的途径。     

纳米材料二氧化锡的制备和激子态光学特性研究

报道纳米材料二氧化锡的制备和室温下激子态光学特征，应用弱量子限域下激子响应模型对结果进行了解释。     

气体探测器雪崩过程的研究

基于汤逊气体放大电子雪崩模型和一定的物理假设,导出描绘气体探测器中正比模式和有限正比模式的一个统一公式.该公式很好地符合实验事实,由此还得到了描述空间电荷作用强弱的参数──等效电容以及表征探测器工作状态的参量──线性度.同时,在假定SQS雪崩中空间电荷起重要作用的情况下,该公式很好地描述了其输出电量随高压的线性关系.     

Dynamics of the current-driven Josephson junction

The irreversible macroscopic dynamics of the Josephson junction coupled to external wires acting as a current source is derived rigorously from the underlying microscopic Hamiltonian quantum mechanics. The external systems are treated in the singular coupling limit. The use of this limit is explicitly justified via an interpretation of the singular coupling limit in terms of the relative magnitudes of system, reservoir, and coupling energies. The qualitative behavior of the macroscopic dynamical equations is shown to depend sensitively and crucially on the interaction between the wires and the superconductors and on the size of the wires: the dc Josephson effect only happens when one lets Cooper pairs be driven into the junction by collective (i.e., small) reservoirs.     

A Semiconductor Waveguide-Type Optical Frequency Shifter

A waveguide-type optical frequency shifter based on a rotating half-wave plate is proposed. The underlying principle can be used to realize a bit-rate-free and modulation-code-free optical frequency shifter. The waveguide was formed along the ≪1 1 1> direction on a GaAs (1 1 0) substrate by molecular beam epitaxy (MBE) and reactive ion beam etching (RIBE). A 10-MHz optical frequency shift with 16 V_p-p applied voltage and 22.5% shift efficiency is demonstrated.