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991.
《Analytical letters》2012,45(12):2307-2321
Abstract

AsI3 is demonstrated to partition from a 9 M HC1, 0.10 M KI, 0.10 H ascorbic acid solution into kerosene and dodecane membranes which do not contain complexing agents. Subsequent hydrolysis at the membrane receiver interface causes a transport of As against its concentration gradient. A 60 minute experiment with a 4 mL receiver solution and a 200 mL sample permits the preconcentration of As by a factor of 16 ± 0.5. The interferences of aluminum and phosphate on the graphite furnace atomic absorption spectro-metric determination of As are eliminated. This transport mechanism, which has not been previously reported, may allow the range of species which can be preconcentrated by transport across supported liquid membranes to be significantly extended.  相似文献   
992.
用海藻酸钠(SA)水凝胶将细胞色素c(cyt-c)固定在棱面热解石墨电极(EPPGE)表面,形成稳定的SA-cyt-c/EPPGE电极,采用蛋白膜伏安法(PFV)研究了cyt-c与电极之间的直接电化学和离子强度、pH、外加金属离子对其电化学行为的影响及其电催化性能。结果表明:cyt-c中血红素辅基Fe(Ⅲ)/Fe(Ⅱ)电对表现出准可逆行为,pH7.0、NaCl浓度为0.1 mol/L时电化学活性最高,外加金属离子则有抑制作用,SA-cyt-c/EPPGE可催化还原O2,有可能发展成为一种溶解氧的生物传感器。  相似文献   
993.
通过旋涂法,采用不同浓度的前躯体制备了氧化锌多层膜,并制备了基于此多层膜的薄膜晶体管器件.实验证明,基于按照氧化锌前躯体浓度顺序为0.25、0.10和0.05 mol.L-1依次旋涂前躯体溶液制备的氧化锌薄膜的晶体管器件的载流子迁移率为0.02 cm.2V-.1s-1,高于按照浓度顺序为0.05、0.10和0.25 mol.L-1依次旋涂前躯体溶液制备的氧化锌薄膜的载流子迁移率(0.013 cm2.V-.1s-1).原子力显微镜(AFM)结果表明,前一种薄膜粗糙度的均方根值(rms)为3.95 nm,而后一种薄膜粗糙度的rms远远高于前者,为4.52 nm,这就说明了氧化锌薄膜的粗糙度对薄膜的半导体性质有很大的影响,这是由于平整的薄膜有利于形成理想的源/漏电极与半导体层的接触.在晶体管中,起传输作用的半导体层是靠近ZnO/SiO2界面处的几纳米的半导体层中的氧化锌晶粒,因此起始形成的氧化锌薄膜的结晶度影响着晶体管的性能.采用X射线衍射(XRD)测试了多层膜中起始形成的薄膜的结晶性能.对于前一种薄膜,起始形成的薄膜为多晶薄膜,而对于后一种薄膜,起始形成的薄膜是无定形薄膜.因此,粗糙度以及起始形成的薄膜的结晶度影响着多层半导体薄膜的性质.  相似文献   
994.
Mesophase pitch (MP)/exfoliated graphite nanoplatelets (GNPs) nanocomposite has been prepared by an efficient method with an initiation of graphite intercalation compounds (GIC). X-ray diffraction, optical microscopy, high-resolution transmission electron microscopy and scanning electron microscopy analysis techniques are used to characterize the samples. It is observed that GIC has exfoliated completely into GNPs during the formation of MP/GNPs nanocomposite and the GNPs are distributed uniformly in MP matrix, which represent a conductive path for a movement of electrons throughout the composites. Electrochemical tests demonstrate that the carbonized MP/GNPs nanocomposite displays higher capacity and better cycle performance in comparison with the pure carbonized MP. It is concluded that such a large improvement of electrochemical performance within the nanocomposite may in general be related to the enhanced electronic conductivity, which is achieved by good dispersion of GNPs within MP matrix and formation of a 3D network of GNPs.  相似文献   
995.
Carbon contamination on extreme ultraviolet (EUV) optics has been observed in EUV lithography. In this paper, we performed in situ monitoring of the build-up and removal of carbon contamination on Mo/Si EUV multilayers by measuring the secondary electron yield as a function of primary electron energy. An electron beam with an energy of 2 keV was used to simulate the EUV radiation induced carbon contamination. For a clean EUV multilayer, the maximum secondary electron yield is about 1.5 electrons per primary electron at a primary electron energy of 467 eV. The maximum yield reduced to about 1.05 at a primary electron energy of 322 eV when the surface was covered by a non-uniform carbon layer with a maximum thickness of 7.7 nm. By analyzing the change in the maximum secondary electron yield with the final carbon layer thickness, the limit of detection was estimated to be less than 0.1 nm.  相似文献   
996.
In this work, preparation and characterization of single-walled carbon nanotube-chitosan (SWNT-chitosan) modified disposable pencil graphite electrode (PGE) was carried out. Firstly, commercial single-walled carbon nanotube was purified and characterized using thermal gravimetric analysis (TGA), Fourier transform infrared spectroscopy (FT-IR), scanning electron microscopy (SEM) and energy dispersive analysis of X-ray (EDX) for this purpose. Purified SWNT was mixed with chitosan polymer for preparing their composite. Then, PGE was modified with this composite. The characterization of the modified electrode was carried out using atomic force microscopy (AFM). The electrochemical behaviour of the obtained electrode was investigated and compared with the electrochemical behaviour of chitosan modified and unmodified PGEs using cyclic voltammetry (CV), differential pulse voltammetry (DPV) and alternative current (AC) impedance spectroscopy. In order to obtain more sensitive electrochemical signals, the effect of SWNT concentration was studied. This modified electrode also showed electrocatalytic effect for hydrogen evolution.  相似文献   
997.
石墨量热计测量相对论电子能谱的数值模拟   总被引:1,自引:0,他引:1       下载免费PDF全文
采用数值实验的方法对石墨量热计测量电子能谱的过程进行了模拟,并对解谱方法进行了研究。使用MCNP软件建立了实验模型,根据不同能量入射电子能量沉积分布情况确立了入射电子能量-沉积能量的传递函数,研究确定合适的函数求解方法,并采用添加人为扰动的方式对该函数求解方法的可靠性进行分析,最终得到了有效的解谱方法。  相似文献   
998.
为提高Mo/Si多层膜的稳定性与使用寿命,通过分析多层膜驻波电场的分布,对表面保护层及多层膜最上层材料的厚度进行优化设计,使优化后的反射率最高.计算表明,一定厚度的表面保护层总对应一个最优的最上层材料厚度.在13.36 nm波长,膜对数为50的Mo/Si多层膜10度入射的理论反射率为74.47%;当添加厚度为2.3 nm的Ru作为表面保护层,对应多层膜最上层Si的优化厚度为3.93 nm,其理论反射率为75.20%.设计结果表明,通过优化设计表面保护层,可以提高多层膜稳定性,改善多层膜性能.  相似文献   
999.
We investigate localization behavior of electron states in bilayer graphene formed with the Bernal stacking in the presence of various types of disorder (site-energy, in-plane hopping and inter-plane hopping) by the use of the transfer matrix method. It is found that all the states are localized at various kinds of disorder (site-energy, in-plane hopping and inter-plane hopping) except that in the case of inter-plane-hopping disorder the states at the zero energy are critical. The implications of the results are discussed.  相似文献   
1000.
Surface plasmon resonance (SPR) can be used to detect the change in reflective index on a metal surface. In this report, we propose detection of the SPR can easily be applied to estimate the thickness of the amorphous carbon (a-C:H) films. To detect changes in film thickness using SPR, devices with an a-C:H/Au structure were fabricated. The a-C:H films were deposited by electron cyclotron resonance plasma chemical vapor deposition (ECR-CVD) and sputtering, and the obtained film densities were 1.4 and 1.6 g/cm3, respectively. By the deposition of an 11-nm thick a-C:H film on a Au layer by sputtering, the SPR angle changed from 44.90° to 47.05°. For a-C:H deposited by ECR-CVD, the SPR angle was shifted from 44.24° for Au without the a-C:H layer to 58.44° after deposition of 45 nm thick a-C:H film. In both systems of the SPR angle increased with increasing the film thickness. The rate at which the SPR angle shifted depended on the a-C:H film density. These results show that the thickness of an a-C:H film can be determined by the SPR angle shift on an a-C:H layer using a-C:H/Au device with an a-C:H film of the same density.  相似文献   
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