ZIF-derived mesoporous carbon materials prepared by activation via Na2SiO3 for supercapacitor

Metal organic frameworks (MOFs) derived carbonaceous materials have a wide range of applications in the fields of energy storage, catalysis, adsorption and separation, etc. Especially, zeolitic imidazolate framework-8 (ZIF-8) is an excellent candidate to synthesize porous carbon due to the large surface area and high nitrogen content. However, the dominated microporous structure of ZIF-8-derived carbon significantly hinders ionic mass transfer, limiting the improvement of performance. Herein, MOF-derived mesoporous carbon was prepared using ZIF-8 as carbon precursor and cheap sodium silicate (Na₂SiO₃) as activator. The introduction of Na₂SiO₃ created rich mesoporous structure and increased specific surface area, as well as the effects of pyrolysis temperature and Na₂SiO₃ dosage on performance was also investigated. The obtained ZIF-derived porous carbon exhibits good electrochemical performance with specific capacitance of 263 F/g at 1 A/g and excellent cycle life (96.07% after 10,000 GCD cycles) in supercapacitor. The use of cheap Na₂SiO₃ activator provides a new orientation for the preparation of MOF-derived carbons with rich pores, high surface area, and facilitates the large-scale application of MOF-derived carbons.     

基于碳纳米管分子封装的一维电子波函数扫描

利用第一性原理,设计并研究了一类基于单臂碳纳米管的分子封装的分子体系．计算表明,半环葫芦脲类化合物可有效封装碳纳米管,引入微弱的分子间相互作用,对碳纳米管的电子态能级结构分布 仅带来微弱影响．半环葫芦脲分子与碳纳米管在管径方向的一维电子态波函数充分耦合,进而有效改变了一些前沿分子轨道的波函数在管径两头的分布以及相应的电子布居浓度．基于电子输运的模拟,发现半环葫芦脲分子在碳纳米管一维方向滑动时的某个电压下的电导变化可准确反映电子态波函数在相应分子导电通道上的一维分布信息．     

基于HRTEM和Raman分析定向多壁碳纳米管阵列的生长机理

以二茂铁、二甲苯为前驱体,石英为衬底,在850 oC的管式炉内采用化学气相沉积法制备出了定向碳纳米管阵列. 高分辨透射电子显微镜和拉曼光谱的结果表明：碳纳米管阵列具有良好的定向性和多壁管状结构,石墨化程度高,并且只在表面存在少量单壁碳纳米管.定向多壁碳纳米管阵列的生长模式为“底部”生长模式,即在生长的初期,当催化剂颗粒较小时,析出的碳原子生成了单壁碳纳米管或与其性质类似的多壁碳纳米管(一般层数小于5层);催化剂颗粒逐渐长大后,大量的碳原子析出后生成了普通的多壁碳纳米管,从而形成了单壁碳纳米管只存在于碳纳米管阵列膜表面和多层碳纳米管膜表面与界面的现象.     

基于改进的多轴差分吸收光谱层析技术的烟羽浓度峰重建

建立了被动多轴差分吸收光谱层析系统,实现烟羽气体的时空浓度分布测量,分别采用传统的同步迭代重建算法(SIRT)和改进的SIRT对测量数据进行了重建分析,克服了一些实际测试中不能获 取大量投影数据或投影分布不均匀、存在噪声的问题,精确地重建出大气痕量气体的二维空间分布．在不同的模型及评价指标下,通过数值模拟对两种重建算法的效果进行比较,改变改进的SIRT算法中的松弛因子,在5500次的迭代过程中,指标d从0.435降到了0.044,指标r从0.376降到了0.044,改进的SIRT算法具有更好的重建效果．外场重建试验中成功重建了大气痕量气体的二维空间．     

基于柔性碳纳米管压阻膜的无线加速度检测系统

通过对加速度检测的重大意义进行分析,得出了加速度检测仪的价值和意义,介绍了本系统的设计思路和应用前景。传感器采用了基于纳米技术的碳纳米管薄膜感应前端,拓宽了传感器设备的研发领域,同时应用无线传感技术,使系统进一步实用化。最后介绍了本系统的实验情况,以及具体应用的效果。     

Back contact–absorber interface modification by inserting carbon intermediate layer and conversion efficiency improvement in Cu2ZnSn(S,Se)4 solar cell

Carbon layers have been employed as intermediate layers between Mo back contact and Cu₂ZnSn(S_1–xSe_x)₄(CZTSSe) absorber film prepared by sol–gel and post‐selenization method. Carbon layers with appropriate thickness can significantly inhibit the formation of MoSe₂ and voids at bottom region of the absorber, and therefore reduce the series resistance remarkably. The conversion efficiency can be boosted by the introducing of the carbon layer from 6.20% to 7.24% by enhancement in short current density, fill factor and open voltage in comparison to the reference sample without carbon layer. However, excess thickness of carbon layer will worse device performance due to the deteriorated absorber crystallinity. In addition, the time‐resolved photoluminescence analysis shows that inserting the carbon layer with suitable thickness does not introduce recombination and lower minority lifetime. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Scalable bottom‐up assembly of suspended carbon nanotube and graphene devices by dielectrophoresis

Bottom‐up assembly by dielectrophoresis (DEP) has emerged in recent years as a viable alternative to conventional top–down fabrication of electronic devices from nanomaterials, particularly carbon nanotubes and graphene. Here, we demonstrate how this technique can be extended to fabricate devices containing carbon nanotubes and graphene suspended between two electrodes over a back‐gate electrode. The suspended device geometry is critical for the development of nano‐electromechanical devices and to extract maximum performance out of electronic and optoelectronic devices. This technique allows for parallel assembly of devices over large scale. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)