催化动力学光度法测定痕量铝

痕量铝在硝酸介质中能催化加速过氧化氢和高碘酸钾与二甲苯胺兰FF之间的褪色反应。研究了反应的最佳实验条件,建立了测定痕量铝的新方法。方法检出限为6.1×10-10gAl3+/mL,检测范围为0-1.0μgAl3+/25mL。本方法具有高灵敏度,选择性较好,操作简便,快速的特点。用以测定水样中的痕量铝,获得满意结果。     

CHBr薄膜制备的初步研究

碳氢（cH）及其掺杂材料常被用作ICF实验靶丸烧蚀层材料。制备CH薄膜及其掺杂材料的方法有很多，诸如：离子束辅助沉积、离子溅射沉积、低压等离子体化学气相沉积（LPPCVD）等。近年来，详细研究了LPPCVD法制备CH薄膜的制备方法与工艺，形成了比较成熟的技术路线与工艺路线，并为“神光”实验提供了一系列实验靶丸。     

薄膜偏振分光镜的研究

概述薄膜偏振分光镜的研究现状及其主要特点，重点分析薄膜偏振分光镜的设计原理,并利用等效折射率的方法计算中心波长的反射率．     

Al/Al2O3P金属基复合材料的静动态压缩性能及损伤分析

用气压浸渗工艺制备了体积分数40％～50％Al2O3颗粒增强纯铝基复合材料，使用了4种不同尺寸的Al2O3颗粒，其平均粒径分别为5μm、10μm、30μm和60μm．测定了这些复合材料的静、动态压缩性能，并通过材料压缩前后密度变化的测量定量表征了材料的累计损伤，结果表明，与基体材料相似，这些复合材料表现出明显的应变率敏感性；当增强颗粒平均粒径小于60μm时，材料的累计损伤基本与应变率无关，而主要取决于材料的应变．材料中颗粒的破裂主要是由颗粒间的相互作用引起的．较小尺寸颗粒增强的复合材料具有较高的流动应力和较小的累计损伤，并随着颗粒体积分数的增加，材料的流动应力和损伤率都相应增加．     

Morphology of Platinum Nanowire Array Electrodepostied Within Anodic Aluminium Oxide Template Characterized by Atomic Force Microscopy

Unifrom platinum nanowires were synthesized by electrodepositing the platinum under a very low altering current frequency(20Hz) and increasing voltage(5-15V）in the proes of anodic aluminium oxide(AAO) template. Atomic force microscopy observation indicates that the template membranes we obtained have hexagonally clse-packed nanochannels.The platinum nanowires have highly ordered arrays after partially dissolving the aluminium oxide membrane.With the increasing dissolvoing time,the platinum nanowire array collapsed.A concave topography of the aluminium substrate was observed after the aluminium oxide membrane was dissolved completely and the platinum nanowires were released from the template.Platinum nanowires were also characterized by transmission electron microscopy and the phase structure of the Al/AAO/Pt composite was proven by x-ray diffraction.     

Emittance Measurements for Beams Extracted from LECR3 Ion Source

High quality ion beams are required by IMP cyclotron and atomic physics research, so it is important to research and measure beam emitt ance of ECR ion source. Intense beams extracted from ECR ion source usually have low energy, so it is suitable to use Electric-Sweep Scanner to measure the emittance. This kind of measurement is popularly used at ECR ion source, and it has some prominent merits such as high accuracy, very short time of data processing and easy expressing of the emittance pattern. So we designed and built this emittance scanner to measure emittance of the ion beams produced by LECR3 ion source. The structure of the ESS is shown in Fig.l, and the photo of the ESS is shown in Fig.2.     

Optical Properties of ZnFe2O4—SiO2 Granular Films Prepared by Radio—Frequency Magnetron Sputtering

We report on the optical properties of ZnFe2O4-SiO2 granular films prepared on quartz substrates by the radio-frequency magnetron sputtering method.Post-annealing was performed at different temperatures under flow oxygen atmosphere.The morphology and Structures of ZnFe2O4 nanoparticles were characterized by x-ray different line types in the optical absorption curves of ZnFe2O4-SiO2 granular films.The critical transition of line types occurs when ZnFe2O4 changes from amorphous to crystalline,and the transition temperature increases with the increasing content of ZnFe2O4.There is an obvious blueshift of the optical absorption edge of the granular films with the decreasing annealing temperature.     

Fluorescence Microscopy of Nanoscale Silver Oxide Thin Films

The experimental conditions for photoactivated intermittent fluorescence from nanoscale silver oxide were studied with fluorescence microscopy.Strong fluorescence was observed from the Ag2O particles with size of 10-20nm excited with both blue and green light .We observed the saturation of Photoexcitation with blue light and explained the experimental results using the model of agglomeration of silver atoms to form small clusters and the fluorescence of Ag2 and Ag3 clusters.     

基片温度对坡莫合金薄膜结构和磁电阻的影响

用磁控溅射方法制备了系列坡莫合金Ni80Fe20薄膜。利用X射线衍射、扫描电子显微镜和原子力显徽镜分析了薄膜的结构、晶粒取向、薄膜厚度、截面结构和表面形态。用4点探测技术测量了薄膜的电阻和磁电阻。结果表明：随衬底温度的升高，晶粒明显长大。膜内的缺陷和应力显著减小，而且增强了薄膜晶粒的[111]择优取向。结果表明，薄膜电阻率显著减小，而磁电阻显著增大。