Simulation of dielectric resonator for high-Tc radio frequency superconducting quantum interference device

Nowadays, the high-critical-temperature radio frequency superconducting quantum interference device (high-$T_{\rm c }$ rf SQUID) is usually coupled to a dielectric resonator that is a standard $10\times 10\times 1$~mm³ SrTiO$₃ (STO) substrate with a YBa₂Cu$₃O$_{7 - \delta }$ (YBCO) thin-film flux focuser deposited on it. Recently, we have simulated a dielectric resonator for the high-$T_{\rm c }$ rf SQUID by using the ANSOFT High Frequency Structure Simulator (ANSOFT HFSS). We simulate the resonant frequency and the quality factor of our dielectric resonator when it is unloaded or matches a 50-$\Omega$ impedance. The simulation results are quite close to the practical measurements. Our study shows that ANSOFT HFSS is quite suitable for simulating the dielectric resonator used for the high-$T_c rf SQUID. Therefore, we think the ANSOFT HFSS can be very helpful for investigating the characteristics of dielectric resonators for high-$T_c rf SQUIDs.     

Effect of excess Y_2O_3 addition on the physical properties of melt processed YBCO bulks

SincethediscoveryofhighTctemperaturesuperconductors,greatprogresshasbeenmadeinbothfundamentalresearchandpracticalapplications.Well-texturedYBCO[1—4]isoneofthemostimportantandpracticalhightemperaturesuperconductorsduetoitshighTcandhighJcinmagneticfield,especiallythehighlevitationforce,whichmakesitsapplicationspossible,suchasinmagneticbearing[5,6],flywheel[7—12],nocontactmagneticlevitationtransportsystem[13,14]andmotors[15,16].Itiswellknownthattheadditionof211to123makesonlyaslightdifferencei…     

Reconstruction of critical current density profiles from AC loss measurements

A method of reconstruction of critical current profiles from measurements of a hysteretic AC loss is proposed. As an example, we have applied this approach to study the degradation in the bulk melt-textured HTS sample with a resonance oscillations technique developed earlier for granular HTS samples and now modified to study HTS bulks. The critical current density profile was determined after the degradation in the thin undersurface layer of about 60 μm.     

第二代高温超导线材研究进展

述评了高温超导第二代线材研究的最新进展,着重介绍了美国AMSC的一种低成本的RABiTS/MOD新技术,涉及基带和超导层的选择,大规模连续制备工艺,钉扎对提高磁场下电流密度的作用,并预测了第二代线材扩大生产规模和商品化的发展前景.     

YBCO薄膜热稳定性和微结构的关系研究

我们已报道过YBa2Cu3O7-δ（YBCO）的过热现象并且对其过热的机制进行了研究．在本文的工作中，主要研究了YBCO薄膜的微结构对于其过热行为的影响．通过高温金相显微镜对具有不同微结构的YB（的薄膜的不同的熔化行为进行了实时观测，并且用原子力显微镜（AFM）和X射线衍射仪（XRD）对这些具有不同品质的薄膜进行表征．结果表明，YBCO薄膜的微结构对于其过热度以及整个薄膜熔化的过程有很大的影响，高品质的薄膜具有低界面缺陷比率，由此导致了其在熔化过程中较高的过热度．本文同时在实时观测，AFM和XRD所得到实验结果的基础上，通过半共格界面能的理论很好的解释了YBCO薄膜在不同的微结构情况下体现出来熔化和过热行为的差异．     

以光辅助MOCVD法在有取向Ni衬底及LAO单晶衬底上制备YBCO外延膜的比较研究

采用光辅助金属有机物化学气相沉积(MOCVD)法,在生长有CeO2/YSZ/Y2O3(YSZ为Y稳定的ZrO2)缓冲层的双轴取向Ni衬底上进行了YBa2Cu3O7-x(YBCO)外延膜生长,并与LaAlO3(100)[LAO(100)]单晶衬底上的YBCO外延膜生长进行了对比.发现在Ni衬底上c轴取向YBCO外延膜的生长温度比LAO衬底上的生长温度低约30℃,但生长速度更快.经分析认为,这种差别主要是由于Ni衬底的热导率比LAO衬底高造成的.Ni衬底及LAO衬底上生长的c轴取向YBCO外延膜的超导极限电流密度(Jc)分别约为0.5 MA/cm2及1.8 MA/cm2.     

Dynamics of the superconducting mixed state in YBa2Cu3O7-δ/PrBa2Cu3O7-δ superlattices in radio frequency regime

Epitaxial multilayers of YBa₂Cu₃O_7-δ and P₁Ba₂Cu₃O_7-δ have been deposited on (100) cut SrTiO₃ substrates using the technique of pulsed laser deposition. Standard ϑ-2ϑ X-ray diffraction measurements on the films showed excellent superlattice reflections. The mixed state of these superlattices has been probed through measurements of radio frequency penetration depth (λ) as a function of temperature (T), magnetic field (H) and it’s orientation (ϑ) with respect to the planes of the superlattices. These data reflect the two-dimensional nature of the mixed state in these systems.     

YBCO体系中Ni替代位置分布的转移与正电子寿命参数的变化

利用正电子湮没和X—射线衍射技术，对Ni替代的YBa2Cu3-xNixO7-δ(x=0.0-0.5)超导体系进行了系统研究，分析了体系的精细结构和正电子寿命参数的变化特征，给出了Ni替代位置在Cu(1)和Cu(2)位之间的可能转移以及与正电子寿命参数之间的关联。结果表明，在小替代浓度下，Ni主要占据Cu(2)位，随替代含量的增加，出现部分Ni向Cu(1)位转移，进一步增大Ni替代含量(x≥0．2)，则出现部分Ni在Cu(1)和Cu(2)位之间随机分布，并伴随有杂相出现。同时，讨论了Ni对超导电性抑制的磁散射机理及其解释。     

蓝宝石衬底上射频溅射法生长CeO2外延薄膜研究

实验采用射频溅射法在(1 102)蓝宝石基片上制备(00l)取向CeO2外延薄膜.低温、低溅射功率都会导致CeO2薄膜呈(111)取向生长.当基片温度在700℃～750℃,溅射功率在100～150W范围内能够制备得到高质量(00l)取向CeO2缓冲层.所制备的CeO2薄膜具有优良的面内面外取向性和平整的表面.用这些缓冲层作为生长面制备得到的YBa2Cu3O7-δ(YBCO)超导薄膜为完全(00l)取向,且面内取向性良好,并具有优越的电学性能:其临界转变温度(Tc)为89.5K,临界电流密度Jc(77K,0T)约1.8×106 A/cm2,微波表面电阻Rs(77K,10GHz)大约为0.50mΩ,能较好的满足微波器件应用中的需要.     

微型SMES用超导储能磁体试验研究

超导储能磁体是超导储能系统(SMES)的关键部件,因此有必要在SMES系统运行前对超导储能磁体进行系统试验研究.本文以第二代高温超导(YBCO)线材设计制作的超导储能磁体为试验对象,通过降温试验、临界电流测试、储能量测试和对地绝缘测试等试验测试并分析了超导储能磁体的电气和低温绝缘性能.试验结果表明:超导储能磁体基本性能...