标准物质研制中ICP-AES分析的实验室质量控制

本文从八个方面介绍了标准物质研制中ICP-AES分析的实验室质量控制体系。在此条件下，很好地控制了样品的空白值、精密度和准确度，测定所得数据均被标样研制单位采用。     

Auger electron spectroscopy investigation of sputter induced altered layers in SiC by low energy sputter depth profiling and factor analysis

The thickness of the altered layer created by ion bombardment of the 6H–SiC single crystal was determined by means of Auger electron spectroscopy (AES) depth profiling in conjunction with factor analysis. After pre-bombardment of the surface by argon ions with energies 1, 2 and 4 keV until the steady state, the depth profiles of the induced altered layers were recorded by sputtering with low energy argon ions of 300 eV. Since the position and shape of the carbon Auger peak depend on the perfection of the crystalline structure, they were used for depth profile evaluation by factor analysis. In this way the depth profiles of the damaged surface region could be estimated in dependence on the ion energy. As a result, the thickness of the altered layer of SiC bombarded with 1, 2 and 4 keV Ar ions using an incident angle of 80° as well as the corresponding argon implantation profile could be measured.     

ICP-AES法测定血红素中铁的含量

本文介绍了应用ICP－AES法测定血红素中铁的含量。对样品的前处理方法进行了探讨，结果表明干灰化法简便、准确。方法的回收率为98.5%－105.0％，相对标准偏差0.997%，结果令人满意。     

Growth of Ni-Al alloys on Ni(1 1 1): (I) Formation of epitaxial Ni3Al from ultra-thin Al deposits

In this paper we describe the alloying process of ultra-thin Al layers (below 8 × 10¹⁵ Al/cm²) deposited on Ni(1 1 1). For this purpose Auger electron spectroscopy, low energy electron diffraction, and ion beam analysis-channelling measurements have been performed in situ in an ultra-high vacuum chamber. Al deposits formed at low temperature (about 130 K) are strained defective crystalline layers retaining the substrate orientation. Alloying takes place, with very progressive Ni enrichment, in a very broad temperature range between 250 K and 570 K. This feature shows that diffusion of the alloy species is more and more difficult when the Ni concentration increases. At 570 K a crystallographically and chemically ordered Ni₃Al phase is formed, and its order continuously improves upon annealing, up to 750 K. We have shown by ion beam methods that this alloy is three-dimensional, extending up to 16 (1 1 1) planes for the thickest deposits. The Ni₃Al phase can also be obtained directly by Al deposition at 750 K, but its crystalline quality is lower and the layer is probably formed of grains elongated along 〈1 1 −2〉 directions. The Al content of the thin Ni₃Al layers formed mostly dissolves in the bulk above 800 K. However a small amount of Al remains segregated at the Ni crystal surface.     

制备XS(X=Ca,Sr)的一种优化工艺

本文利用一种新的制备工艺进行了XS(X=Ca,Sr)基质发光材料的合成;利用X-射线衍射等手段进行了反应效率、产物纯度、化学稳定性和材料的结晶学参数等研究实验结果表明,该方法比目前广泛采用的工艺具备更多优点。     

HL-1装置石墨孔栏杂质收集探针的俄歇电子能谱及孔栏表面分析

在HL-1装置的输样机构上安放了硅收集探针。经过55次高功率托卡马克放电辐照后,对于因石墨孔栏被腐蚀而溅射蒸发,并沉积在硅收集探针上的杂质涂层进行了俄歇电子能谱(AES)分析,获得无主动冷却石墨孔栏被腐蚀而溅射蒸发出来的碳杂质流通量约为8×10~(13)cm~(-2)·S~(-1),金属重杂质镍和铬较GH39高镍钢孔栏时降低44％左右。     

Combined EPMA and AES depth profiling of a multilayer Ti-Al-O-N coating

In order to compare thin-film electron probe microanalysis (EPMA) and Auger electron spectroscopy (AES) regarding reliability in quantifying chemical compositions of Ti-Al-O-N coatings with depth, a multilayer was prepared on a silicon wafer by using reactive ionized cluster beam deposition technique. Within a total thickness of about 25 nm the composition of the multilayer varied step by step from Ti-Al-O-N at the bottom to Al-O at the top. AES and, as an innovation, EPMA crater edge profiling was applied to measure the composition with depth. For quantification special thin-film EPMA techniques based on Monte Carlo simulations were applied. The chemical binding states of Al and Ti with depth were analysed using a high resolution energy analyser (MAC 3) for the AES investigations working in the direct mode. According to the deposition procedure the concentration profiles of the components varied with depth for both AES and EPMA measurements. AES provided a better depth resolution than EPMA. To get a true calibration of the depth scale an in-situ measurement method like an optical interferometry will be required. Assuming that the relative sensitivity factors are available AES depth profiling delivers concentration profiles with good accuracy. The new EPMA application provided quantitative depth profiles concerning concentration and coverage. For EPMA crater edge profiling the coating needs to be deposited on a foreign substrate because depth distributions of elements being present in both the layer and the substrate cannot be resolved.The combination of AES-depth profiling with EPMA crater edge profiling techniques is a powerful tool to analyse heterostructures quantitatively.     

ICP-AES法同时测定氯化锂和氢氧化锂中七种杂质元素

本文报导了用ＩＣＰ－ＡＥＳ法同时测定ＬｉＣｌ和ＬｉＯＨ·Ｈ２Ｏ中７种杂质元素Ａｌ、Ｂａ、Ｃａ、Ｆｅ、Ｍｇ、Ｓｉ、Ｚｎ的分析方法。研究了基体元素锂对被测元素的基体效应，采用基体匹配法与背景扣除法进行校正。被测元素的检出限为０．１－９．４ｎｇ／ｍＬ，加标试验回收率为９２％－１０９％，当杂质元素含量为０．０００１％－０．０２８％时，相对标准偏差小于７％。方法简便、快速、准确，用于样品分析，取得了满意的结果。     

Exact solutions for nonlinear Schr?dinger equation in phase space: applications to Bose－Einstein condensate

The stationary-state nonlinear Schr?dinger equation, which models the dilute-gas Bose－Einstein condensate, is introduced within the framework of the quantum phase-space representation established by Torres-Vega and Frederick. The exact solutions of equation are obtained in the phase space, by means of the wave-mechanics method. The eigenfunctions in position and momentum spaces are obtained through the ‘Fourier-like' projection transformation from the phase space eigenfunctions. The eigenfunction with a hypersecant part is discussed as an example.     

Characteristics of Analyte Ionization in Low Power Microwave Plasma Torch

The ionization characteristics of the analytes in a low power Ar microwave plasma torch (MPT) was studied. The influence of forward microwave power, the flow rate of carrier gas and matrix element on the degree of ionization were observed. The axial profiles of the degree of the ionization of some elements were determined. The experimental results are very important for developing the new analytical source——microwave plasma torch (MPT).