HPLC-ELSD测定不同厂家中/长链脂肪乳注射液中的溶血磷脂酰胆碱

采用高效液相色谱-蒸发光散射检测器(HPLC-ELSD)测定不同厂家中/长链脂肪乳注射液中溶血磷脂酰胆碱(LPC)的含量。采用Lichrospher Diol色谱柱(250mm×4.6mm,5μm),以正己烷-异丙醇-水(29.5:59:11.5,V/V/V)为流动相A,正己烷-异丙醇(43:57,V/V)为流动相B,进行梯度洗脱,流速1mL/min,漂移管温度85℃,气体流速2.7L/min。结果溶血磷脂酰胆碱在0.299—2.99mg/mL浓度范围内线性关系良好(r=0.9999),平均回收率为99.62%,RSD为0.89%。不同厂家产品中溶血磷脂酰胆碱的含量为0.92—1.34mg/mL。方法准确、方便,可以准确测定中/长链脂肪乳注射液中溶血磷脂酰胆碱的含量。     

B在Hg0.75Cd0.25Te中掺杂效应的第一性原理研究

基于密度泛函理论的第一性原理方法,通过形成能和束缚能的计算研究了B在Hg_0.75Cd_0.25Te 中的掺杂效应.结果表明B在Hg_0.75Cd_0.25Te中存在着两种主要形态:第一种是在完整的 Hg_0.75Cd_0.25Te材料中B稳定存在于六角间隙位置而非替位.此时,B形成容易激活的三级施主使材料表现为n型.另一种是在有Hg空位存在的Hg_0.75Cd_0.25Te中B更容易与Hg空位结合形成缺陷复合体,其束缚能达到了0.96 eV.这种复合体在Hg_0.75Cd_0.25Te材料中形成单施主也使材料表现为n型.考虑到辐照损伤形成的Hg空位受主,这种B与Hg空位的复合体是制约B离子在MCT中注入激活的一个重要因素.     

Topological insulators based on the semi-metallic HgCdTe

The review of peculiarity of growth and experimental results of the magneto-transport measurements (longitudinal magneto-resistance R_xx and the Hall resistance R_xy) over a wide interval of temperatures for several samples of Hg_1?xCd_xTe (x ≈ 0.13–0.15) grown by MBE is presented in this paper. An amazing temperature stability of the SdH-oscillation period and amplitude is observed in the entire temperature interval of measurements up to 50 K. Moreover, the quantum Hall effect (QHE) behaviour of the Hall resistance was shown in the same temperature interval. These peculiarities of the R_xx and R_xy for strained thin layers are interpreted using quantum Hall conductivity (QHC) on topologically protected surface states (TPSS). In the case of not strained layers it is assumed that the QHC on the TPSS contributes also to the conductance of the bulk samples. The experimental results on magneto-transport (QHC and SdH) obtained for the strained 100 nm thickness Hg_1?xCd_xTe layer are interpreted on the basis of the 8 × 8 kp model and an advantage of the Hg_1?xCd_xTe as topological insulators is shown. This article is an expanded version of the scientific reports presented at the International Conference on Semiconductor Nanostructures for Optoelectronics and Biosensors 2016 ICSeNOB2016, May 22–25, 2016, Rzeszow, Poland.