Schiff碱水杨醛苯甲酰腙的特性

研究了 Schiff碱水杨醛苯甲酰腙 (简称 SBH)晶体在 DMSO及其 DMSO- H2 O的混合溶剂中的红外光谱 ,通过 SBH氘代前后的 IR对比发现 ,羟基氢质子与混合溶剂 DMSO- H2 O(3∶ 1 ,V/ V)产生较大的相互作用。向溶有 SBH的 75 % DMSO- 2 5 % H2 O的溶液滴加 KOH发现 ,SBH分子上的 C O羰基基团先与 KOH作用 ,其后与 O H 羟基基团作用     

超导氧化物La1.85Sr0.15CuO4/超高分子量聚乙烯复合材料的输运性质

采用热压法获得了具有不同混合比例的超导氧化物La1.85Sr0.15CuO4/超高分子量聚乙烯导电复合材料,并利用x射线衍射、扫描电子显微镜和标准四引线方法对复合材料的结构和低温电输运性质进行测量.实验结果显示,超导氧化物La1.85Sr0.15CuO4颗粒随机分布在聚合物本体中,相互间没有连接构成网络结构.在正常态下,复合材料的电阻-温度变化曲线给出类半导体行为.但对应于超导氧化物La1.85Sr0.15CuO4的超导转变温度Tc处,复合材料的电阻-温度变化曲线出现了极小值.室温下电阻率ρ随外加电场强度E的变化曲线测量结果表明,ρ-E曲线为一线形关系,随着电场强度E增加,电阻率ρ下降.文中对可能存在的导电机制进行分析,结果表明隧道贯穿模型可以很好地解释复合材料的导电机制.另外,外加电场强度E对复合材料的电输运特性有明显的影响.     

Physics in Melbourne

I survey highlights of the practice of physics and allied sciences in Melbourne,Australia, from the 1850s, soon after Europeans first settled in the area, to the present. I note recognizable sites of past and current physical-science activity that may be visited, as well as exhibits of historic items of physics apparatus. I trace the role of physics, in the course of a century and a half, in the evolution of a pioneering settlement into a large city embedded in a modern industrial economy.     

Effect of Ga doping on magneto-transport properties in colossal magnetoresistive La0.7Ca0.3Mn1−xGaxO3 (0<x<0.1)

Samples of La_0.7Ca_0.3Mn_1−xGa_xO₃ with x=0, 0.025, 0.05 and 0.10 were prepared by standard solid-state reaction. They were first characterized chemically, including the microstructure. The magnetic properties and various transport properties, i.e. the electrical resistivity, magnetoresistivity (for a field below 8 T), thermoelectric power and thermal conductivity measured each time on the same sample, are reported. The markedly different behaviour of the x=0.1 sample from those with a smaller Ga content, is discussed. The dilution of the Mn³⁺/Mn⁴⁺ interactions with Ga doping considerably reduces the ferromagnetic double exchange interaction within the manganese lattice leading to a decrease of the Curie temperature. The polaron binding energy varies from 224 to 243 meV with increased Ga doping.     

镁掺杂对In2O3电导和气敏性能的影响

用共沉淀法制备了Mg2 + 掺杂的In2 O3 纳米粉 ,研究了镁掺杂对In2 O3 电导和气敏性能的影响 .结果表明 :MgO和In2 O3 间可形成有限固溶体In2 -xMgxO3 (0≤x≤ 0 .40 ) ;MgIn× 电离的空穴对材料导带电子的湮灭 ,使掺镁纳米粉的电导变得很小 ;n(Mg2 + )∶n(In3 + ) =1∶2共沉淀物于 90 0℃下热处理 4h ,用所得的纳米粉制作的传感器在 32 0～ 370℃下 ,对 45 μmol/LC2 H5OH的灵敏度达 10 2 .5 ,为相同浓度干扰气体Petrol的 12倍多 .     

Atomically precise self-assembly of one-dimensional structures on silicon

This work has three main themes: (1) fabricate atomically precise nanostructures at surfaces, particularly nanowires consisting of atom chains; (2) explore the behavior of one-dimensional electrons in atomic chains; (3) find the fundamental limits of data storage using an atomic scale memory. Semiconductor surfaces lend themselves towards self-assembly, because the broken covalent bonds create elaborate reconstruction patterns to minimize the surface energy. An example is the large 7 × 7 unit cell on Si(1 1 1), which can be used as building block. On semiconductors, the surface electrons completely de-couple from the substrate, as long as their energy lies in the band gap. Angle-resolved photoemission reveals surprising features, such as a fractional band filling and a spin-splitting at a non-magnetic surface. An interesting by-product is a memory structure with self-assembled tracks that are five atom rows wide and store a bit by the presence or absence of a single silicon atom. This toy memory is used to test the fundamental limits of data storage and to see how storage on silicon compares to storage in DNA.     

Zero-temperature Kosterlitz-Thouless transition in a two-dimensional quantum system

We construct a local interacting quantum dimer model on the square lattice, whose zero-temperature phase diagram is characterized by a line of critical points separating two ordered phases of the valence bond crystal type. On one side, the line of critical points terminates in a quantum transition inherited from a Kosterlitz-Thouless transition in an associated classical model. We also discuss the effect of a longer-range dimer interaction that can be used to suppress the line of critical points by gradually shrinking it to a single point. Finally, we propose a way to generalize the quantum Hamiltonian to a dilute dimer model in presence of monomers and we qualitatively discuss the phase diagram.     

La1-xPrxMnO3(x=0.1,0.2)薄膜庞磁电阻性质的研究

一种新的庞磁电阻氧化物薄膜La1-xPrxMnO3(x=0.1,0.2)薄膜用脉冲激光沉积(PLD)方法生长在(100)SrTiO3单晶基底上.XRD结果显示薄膜具有很好的外延单晶取向.电输运和磁性质的研究表明薄膜具有显著的庞磁电阻效应(CMR)效应,其中磁电阻比率达95%(在5T的磁场下).X射线光电子能谱(XPS)的结果表明薄膜体系中Pr离子的价态为+4价,因此该薄膜很可能是电子掺杂的庞磁电阻体系.     

LaMgAl11O19∶R(R＝Tb,Mn)的真空紫外光谱特性

采用高温固相反应法合成了LaMgAl11O19∶R (R=Mn, Tb)荧光体, 测量了荧光体的真空紫外激发光谱和相应的发射光谱, 观察到基质吸收带位于170 nm附近, Mn2+离子的吸收位于170～510 nm范围, Tb3+ 离子的4f-5d吸收位于170～250 nm范围. 在147 nm激发下, 它们发射绿光. 真空紫外光谱特性的研究表明, 基质与激活离子之间存在较好的能量传递.