Correlation between phase structure and electrical conduction in BISNVOX system for intermediate temperature solid oxide fuel cells (IT-SOFC)

Samples of Sn⁴⁺-substituted bismuth vanadate, formulated as Bi₄Sn _x V_{2? x} O_{11?( x /2)? δ} in the composition range 0.07 ≤ x ≤ 0.30, were prepared by standard solid-state reactions. Sample characterization and the principal phase transitions (α ? β, β ? γ and γ′ ? γ) were investigated by FT-IR spectroscopy, X-ray powder diffraction, differential thermal analysis (DTA) and AC impedance spectroscopy. For composition x = 0.07, the α ? β and β ? γ phase transitions were observed at temperatures of 451 and 536°C, respectively. DTA thermograms and Arrhenius plots of conductivities revealed the γ′ ? γ phase transition at 411 and 423°C for x = 0.20 and 0.30, respectively. AC impedance plots showed that conductivity is mainly due to the grain contribution, which is evident in the enhanced short-range diffusion of oxide ion vacancy in the grains with increasing temperature. The highest ionic conductivity (5.03 × 10^?5 S cm^?1 at 300°C) was observed for the x = 0.17 solid solution with less pronounced thermal hysteresis.     

大型钢结构人行景观天桥的有限元分析

采用有限元方法对大型钢结构人行景观天桥进行了静力学、温度应力、动力学模态和初步的抗震能力分析,并就桥自重作用下的最大竖向位移和实际观测结果进行了比较,两者是一致的.计算结果表明:人行景观天桥在常规、温度极值改变和多遇地震荷载作用等多种工况下,现有的设计方案具有足够的强度、刚度和抗震能力.     

Experimental design to measure the anchoring energy on substrate surface by using the alternating-current bridge

The anchoring property of the substrate surface of liquid crystal cells plays an important role in display and nondisplay fields. This property directly affects the deformation of liquid crystal molecules to change the phase difference through liquid crystal cells. In this paper, a test method based on the alternating-current bridge is proposed to determine the capacitance of liquid crystal cells and thus measure the anchoring energy of the substrate surface. The anchoring energy can be obtained by comparing the capacitance–voltage curves of twisted nematic liquid crystal cells with different anchoring properties in experimental and theoretical results simulated on the basis of Frank elastic theory. Compared with the other methods to determine the anchoring energy, our proposed method requires a simple treatment of liquid crystal cells and allows easy and high-accuracy measurements, thereby expanding the test ideas on the performance parameters of liquid crystal devices.     

延长速调管使用寿命的方法

描述了一种延长EPR波谱仪中速调管使用寿命的方法.根据这种方法,只要正确地调谐微波桥的工作状态和适当地调整功率电平器的功率校正电平.即使对于已经严重老化的速调管仍然可以继续使用一段时间,维持仪器的正常运行.     

不同排列下高温超导带材交流损耗的仿真计算

交流损耗的数值计算对于高温超导带材具有重要的现实意义。应用有限元软件模拟仿真超导体部分计算求出不同排列下的交流损耗,与实验结果以及Norris公式的计算结果相比较,得到的仿真结果符合较好。结果说明圆筒形的排列能够有效地减少交流损耗。     

高温超导YBCO线圈交流损耗的频率特性

YBCO线圈的交流损耗直接关系到YBCO设备的运行成本及稳定性。实现对YBCO线圈交流损耗的快速、准确测量,对于开展YBCO涂层导体的应用研究具有重要的意义。文中采用电测量法,在77K、零场和不同频率条件下,对YBCO线圈通以不同运行电流时产生的交流传输损耗进行测量。构建了YBCO线圈交流损耗的数值计算模型,对YBCO线圈交流损耗进行理论研究,最后将实验数据与理论计算结果进行比较,两者结果基本一致。可以发现,YBCO线圈在频率低于75Hz时,交流传输损耗随频率的增大而减小,当频率从75Hz增加到195Hz时,交流传输损耗随频率的增大而增加。     

Electrochemical characterization of poly(vinylidenefluoride)-zinc triflate gel polymer electrolyte and its application in solid-state zinc batteries

Gel polymer electrolyte (GPE) films comprising of poly(vinylidenefluoride), propylene carbonate, ethylene carbonate and zinc trifluoromethane sulfonate are prepared and characterized. The composition of GPE is optimized to contain minimum liquid components with a maximum specific conductivity of 3.94×10⁻³ S cm⁻¹ at (25±1) °C. A detailed investigation on the properties such as ionic conductivity, transport number, electrochemical stability window, reversibility of Zn/Zn²⁺ couple and Zn/gel electrolyte interfacial stability have been carried out. The ionic conductivity follows a VTF behaviour with an activation energy of about 0.0014 eV. Cationic transport number varies from 0.51 at 25 °C to 0.18 at 70 °C. Several cells have been assembled with GPE as the electrolyte, zinc as the anode, γ-MnO₂ as the cathode and their charge–discharge behaviour followed. Capacity values of 105, 82, 64 and 37 mAh/g of MnO₂ have been achieved at 10, 50, 100 and 200 μA/cm² discharge current densities, respectively. The discharge capacity values are almost constant for about 55 cycles for all values of current densities. Cyclic voltammetric study of MnO₂ electrode in Zn/GPE/MnO₂ cell clearly shows intercalation/deintercalation of Zn²⁺.     

Analyses of temperature-dependent interface states,series resistances,and AC electrical conductivities of Al/p Si and Al/Bi_4Ti_3O_(12)/p Si structures by using the admittance spectroscopy method

In this study, Al/p-Si and Al/Bi4Ti3O12/p-Si structures are fabricated and their interface states （Nss）, the values of series resistance （Rs）, and AC electrical conductivity （σac） are obtained each as a function of temperature using admit- tance spectroscopy method which includes capacitance-voltage （C-V） and conductance-voltage （G-V） measurements. In addition, the effect of interfacial Bi4Ti3012 （BTO） layer on the performance of the structure is investigated. The voltage- dependent profiles of Nss and Rs are obtained from the high-low frequency capacitance method and the Nicollian method, respectively. Experimental results show that Nss and Rs, as strong functions of temperature and applied bias voltage, each exhibit a peak, whose position shifts towards the reverse bias region, in the depletion region. Such a peak behavior is attributed to the particular distribution of Nss and the reordering and restructuring of Nss under the effect of temperature. The values of activation energy （Ea）, obtained from the slope of the Arrhenius plot, of both structures are obtained to be bias voltage-independent, and the Ea of the metal-ferroelectric-semiconductor （MFS） structure is found to be half that of the metal-semiconductor （MS） structure. Furthermore, other main electrical parameters, such as carrier concentration of acceptor atoms （NA）, built-in potential （Vbi）, Fermi energy （EF）, image force barrier lowering （△φb）, and barrier height （φb）, are extracted using reverse bias C 2-V characteristics as a function of temperature.     

硅桥红外辐射单元温度的显微拉曼测定

本文采用显微拉曼光谱实验的方法对红外目标模拟器中的重掺杂Si电阻微桥单元进行了绝对温度的测量 ,并根据斯托克斯与反斯托克斯强度与温度关系以及Raman峰位移动与温度依赖关系两种方法确定温度 ,保证了所测温度的可靠性。针对Si桥建立相应的Raman模型 ,选择合适的物理参数 ,最终得到了反映Si桥工作特性的电流 -温度关系。此外 ,通过对Si桥的空间分辨的测量实验 ,得到了Si桥上的温度分布状况 ,对了解其电阻、热导及氧化等特性十分有用。所有结果表明该方法是器件优化的有效途径。     

关于惠斯登电桥测电阻中几个问题的讨论

本文简述了电桥原理。提出了电桥平衡和灵敏度计算方面的两个问题，并给出了解决办法。