A Note on Casoratian Solutions to Two-Dimensional Toda Lattice

In this short paper we generalize the conditions that Casoratian entries satisfy for the two-dlmenslonal Toda lattice. Although we finally conclude that our generalization is trivial in some sense for getting new solutions, our discussion is still helpful for the study of Wronskian technique.     

Conditional Entropy of Partitions on Quantum Logic

A construction of conditional entropy of partitions on quantum logic is given, and the properties of conditional entropy are investigated.     

基于碳化硅衬底的宽禁带半导体外延

宽禁带半导体具备禁带宽度大、电子饱和飘移速度高、击穿场强大等优势,是制备高功率密度、高频率、低损耗电子器件的理想材料。碳化硅(SiC)材料具有热导率高、化学稳定性好、耐高温等优点,在SiC衬底上外延宽禁带半导体材料,对充分发挥宽禁带半导体材料的优势,并提升宽禁带半导体电子器件的性能具有重要意义。得益于SiC衬底质量持续提升及成本不断降低,基于SiC衬底的宽禁带半导体电子市场占比呈现逐年增加的态势。在SiC衬底上外延生长高质量的宽禁带半导体材料是提高宽禁带半导体电子器件性能及可靠性的关键瓶颈。本文综述了近年来国内外研究者们在SiC衬底上外延SiC、氮化镓(GaN)、氧化镓(Ga₂O₃)所取得的研究进展,并展望了SiC衬底上宽禁带半导体外延的发展及应用前景。     

单晶硅晶格间距的测量技术进展及应用

单晶硅晶格间距是许多重要物理常数测量的基础。本文介绍了硅晶格间距测量技术的发展历程,包括X射线干涉仪直接测量和晶格比较仪间接测量两种方法,以及影响测量结果不确定度的关键因素。得益于晶格间距测量的进展,在纳米尺度,硅晶格间距被国际计量局(BIPM)批准成为新的米定义复现形式。最后介绍了硅晶格在计量学中的应用,以及基于硅晶格实现纳米几何量测量的溯源体系的研究趋势。     

晶格畸变检测仪研究碳化硅晶片中位错缺陷分布

利用晶格畸变检测仪研究了SiC晶片位错分布情况,通过对熔融KOH腐蚀后的SiC晶片进行全片或局部扫描,从而得到完整SiC晶片或局部区域的位错分布。与LEXT OLS4000 3D激光共聚焦显微镜扫描腐蚀图进行比较,晶格畸变检测仪扫描腐蚀图可以将晶片上位错腐蚀坑信息完全呈现出来,且根据腐蚀坑呈现的颜色及尺寸大小,可以分辨出三种不同类型的穿透型位错,其中黑点腐蚀坑对应螺位错,小尺寸白点腐蚀坑对应刃位错,大尺寸白点腐蚀坑对应混合型位错。采用晶格畸变测试仪研究了4英寸(101.6 mm)N型4H-SiC晶体不同生长时期的位错密度及分布情况,结果表明随着晶体生长,位错密度呈现逐渐降低的趋势,生长后期晶片的总位错密度降为生长前期晶片总位错密度的近1/3,有利于反馈位错缺陷在SiC晶体生长过程中的延伸和转化特性信息,以指导SiC晶体生长工艺改进。     

Lattice Boltzmann study of the interaction between a single solid particle and a thin liquid film

The isothermal single-component multi-phase lattice Boltzmann method(LBM) combined with the particle motion model is used to simulate the detailed process of liquid film rupture induced by a single spherical particle.The entire process of the liquid film rupture can be divided into two stages.In Stage 1,the particle contacts with the liquid film and moves into it due to the interfacial force and finally penetrates the liquid film.Then in Stage 2,the upper and lower liquid surfaces of the thin film are driven by the capillary force and approach to each other along the surface of the particle,resulting in a complete rupture.It is found that a hydrophobic particle with a contact angle of 106.7° shows the shortest rupture duration when the liquid film thickness is less than the particle radius.When the thickness of the liquid film is greater than the immersed depth of the particle at equilibrium,the time of liquid film rupture caused by a hydrophobic particle will be increased.On the other hand,a moderately hydrophilic particle can form a bridge in the middle of the liquid film to enhance the stability of the thin liquid film.     

An upper bound on the covering radius of the logarithmic lattice for cyclotomic number fields

Recently, in coding theory and cryptography, it has been important the diversified use of lattices. One use of them is to cover a space. Each lattice has a covering radius, a number corresponding to the radius of a ball whose translations by all the points of the lattice cover efficiently the space generated by a basis of it. A way to obtain lattices algebraically is from subgroups of the multiplicative group of units of a number field via the logarithm embedding. This includes the logarithm lattice. In this work, it is presented an upper bound on the covering radius of the logarithm lattice obtained from the units of general cyclotomic number fields via the logarithm embedding, which generalizes an upper bound present in a previous work for cyclotomic number fields of prime-power indices.