Synthesis, structure and luminescence of LaSi3N5:Ce phosphor

In this work, new LaSi₃N₅:Ce³⁺ phosphors have been synthesized by solid-state reaction. Rietveld refinement of the crystal structure of La_1−xCe_xSi₃N₅ reveals that Ce atoms substituted for La atoms occupy 4a crystallographic positions. Broad emission and excitation bands observed were attributed to the transitions between the doublet ground state of the 4f¹ configuration and the crystal field components of the 5d¹ excited state. At 77 K, the centroid and crystal field splitting ε_cfs of the 5d levels of Ce³⁺ in LaSi₃N₅:Ce³⁺ compounds were valuated at 33.4×10³ and 11.3×10³ cm⁻¹, respectively. The zero-phonon line and the Stokes shift were measured to be 26.0×10³ and 5.0×10³ cm⁻¹, respectively.     

Determination of optical properties in nanostructured thin films using the Swanepoel method

We present the methodological framework of the Swanepoel method for the spectrophotometric determination of optical properties in thin films using transmittance data. As an illustrative case study, we determined the refractive index, thickness, absorption index, and extinction coefficient of a nanostructured 3 mol% Y₂O₃-doped ZrO₂ (yttria stabilized zirconia, 3YSZ) thin film prepared by the sol-gel method and deposited by dipping onto a soda-lime glass substrate. In addition, using the absorption index obtained with the Swanepoel method, we calculated the optical band gap of the film. The refractive index was found to increase, then decrease, and finally stabilize with increasing wavelength of the radiation, while the absorption index and extinction coefficient decreased monotonically to zero. These trends are explained in terms of the location of the absorption bands. We also deduced that this 3YSZ thin film has a direct optical band gap of 4.6 eV. All these results compared well with those given in the literature for similar thin films. This suggests that the Swanepoel method has an important role to play in the optical characterization of ceramic thin films.     

Spatially resolved Raman spectroscopy evaluation of residual stresses in 3C-SiC layer deposited on Si substrates with different crystallographic orientations

Raman scattering studies were performed on hot-wall chemical vapor deposited (heteroepitaxial) silicon carbide (SiC) films grown on Si substrates with orientations of (1 0 0), (1 1 1), (1 1 0) and (2 1 1), respectively. Raman spectra suggested that good quality cubic SiC single crystals could be obtained on the Si substrate, independent of its crystallographic orientation. Average residual stresses in the epitaxially grown 3C-SiC films were measured with the laser waist focused on the epilayer surface. Tensile and compressive residual stresses were found to be stored within the SiC film and in the Si substrate, respectively. The residual stress exhibited a marked dependence on the orientation of the substrate. The measured stresses were comparable to the thermal stress deduced from elastic deformation theory, which demonstrates that the large lattice mismatch between cubic SiC and Si is effectively relieved by initial carbonization. The confocal configuration of the optical probe enabled a stress evaluation along the cross-section of the sample, which showed maximum tensile stress magnitude at the SiC/Si interface from the SiC side, decreasing away from the interface in varied rate for different crystallographic orientations. Defocusing experiments were used to precisely characterize the geometry of the laser probe in 3C-SiC single crystal. Based on this knowledge, a theoretical convolution of the in-depth stress distribution could be obtained, which showed a satisfactory agreement with stress values obtained by experiments performed on the 3C-SiC surface.     

Hydrogen-induced magnetic and structural transformations of GdCu

The magnetization of GdCu induced by hydrogen uptake was measured within the temperature range of 4.2 to 300 K, occurring phase changes were followed by X-ray diffraction measurements at ambient temperature. The prepared GdCu powder of CsCl-type structure readily absorbed hydrogen at ambient temperature, where hydrogen pressure was below 100 kPa. Hydrogenation changed the magnetism of GdCu in a complex manner from an antiferromagnetic-like type to a paramagnetic-like one. The changes in magnetic properties of GdCu by hydrogenation are governed by hydrogen-induced disproportionation. Within the composition range 0<[H]/[GdCu]<1, GdCu disproportionated according to 2GdCu+H₂→GdH₂+GdCu₂ . The magnetization was evaluated by the expression χ_total=(1-x)χ_GdCu+(x/2)(χ_GdH2+χ_GdCu2). GdCu hydride was not observed. Hydrogenation beyond [H]/[GdCu]>1 gave rise to the disproportionation of GdCu₂ causing the change in magnetization.     

Single-Proton Pickup Reaction of the Halo Nucleus ^6He on a ^9Be Target at 25 MeV/nucleon

The inclusive differential cross sections of the ^7 Li nucleus in a reaction induced by ^6He on a ^9Be target are measured at an incident energy of 25 MeV/nucleon. Finite-range distorted-wave Born approximation calculations suggest that these ^7 Li particles are formed in a direct single-proton pickup reaction ^9Be（^6He,^7 Li）^8Li. The experimental data can be well reproduced by taking into account of the contributions of both the ground states and the first excited states of ^7Li and ^8Li.     

Finite element simulation of pulsed laser ablation of titanium carbide

In the present paper, a 2D finite element model based on the heat-conduction equation and on the Hertz-Knudsen equation for vaporization was developed and used to simulate the ablation of TiC by Nd:YAG and KrF pulsed laser radiation. The calculations were performed for fluences of 8 and 10 J/cm², which according to experimental results obtained previously, correspond to large increases of the ablation rate. The calculated maximum surface temperature of the target for both lasers is higher than the estimated value of TiC critical temperature, corroborating the hypothesis that the increase of the ablation rate is explained by the explosive boiling mechanism.     

Electrical properties and stability of Tb-doped zinc oxide-based nonlinear resistors

The microstructure, electric field-current density (E-J), capacitance-voltage (C-V), and stability characteristics of Zn-Pr-Co-Cr-Tb oxide-based nonlinear resistors were investigated for different Tb₄O₇ amounts. It increased in the range of 8.9-42.0 in the nonlinear coefficient and in the range of 1026-6514 V/cm in the breakdown field with increasing Tb₄O₇ amount. As Tb₄O₇ amount increased, the donor density decreased in the range of 1.23×10¹⁸-0.70×10¹⁸/cm³, whereas the barrier height at grain boundaries increased in the range of 0.73-0.93 eV. A good stability was obtained in the range of 0.25-0.5 mol% in Tb₄O₇ amount.     

Structural analysis of Cd-Te-O films prepared by RF reactive sputtering

Crystalline and microcrystalline Cd-Te-O samples have been obtained by RF reactive sputtering from a CdTe target using N₂O as oxidant. The growth conditions were substrate temperatures of 323 K, 573 K and 773 K and cathode voltage of −400 V, corresponding to 30 W of forward power. The samples were studied by micro-Raman spectroscopy, X-ray diffraction and optical transmittance. The films are remarkably transparent in the visible range, with transmittances about 88% at 400 nm and band gap energies above the absorption edge of the glass substrates. Although only the samples prepared at 773 K present defined diffraction peaks, the analysis of the Raman spectra indicate that samples prepared at 323 K and 573 K have a defined microstructure indeed. The spectra fitting performed by comparison with pattern compounds demonstrate that Cd-Te-O films are formed of Te-O units similar to those present in metal oxide-doped tellurite glasses, such as TeO₃ and TeO_3 + 1 linked through Cd-O bonds. As the substrate temperature increases the microstructure evolves from a γ-TeO₂ richer state to Cd_xTe_yO_z. In the crystalline sample the main phase identified was CdTeO₃ even though evidence of other phases was observed.