Theoretical study of indirect excitons’ lifetime in coupled AlGaN/GaN quantum wells in the presence of an electrostatic trap

The lifetime of electrostatically trapped indirect excitons in a field-effect structure based on coupled AlGaN/GaN quantum wells has been theoretically studied. Within the plane of a double quantum well, indirect excitons are trapped between the surfaces of the AlGaN/GaN heterostructures and a semitransparent metallic top gate. The trapping mechanism has been assumed to be a combination of the quantum confined Stark effect and local field enhancement. In order to study the trapped exciton lifetime, the binding energy of indirect excitons in coupled quantum wells is calculated by finite difference method in the presence of an electric field. Thus, the lifetime of trapped excitons is computed as a function of well width, AlGaN barrier width, the position of double quantum well in the device and applied voltage.     

测量冷原子温度的理论与近似拟合公式的误差分析

对短程飞行时间法(tim e-of-flight,TOF)中推算冷原子温度的理论拟合公式与近似拟合公式进行了误差分析与比较。研究表明:对于使用短程飞行吸收光谱信号推测冷原子团温度,当探测光光斑半径与冷原子团高斯半径之比k小于0.2时,理论拟合公式和近似拟合公式能很好的相符,随着探测光光斑半径与冷原子团高斯半径比值的逐渐增大,用近似拟合公式所得TOF吸收信号与用理论拟合公式所得TOF吸收信号的误差也将逐渐增大,当比值为0.5时,用近似拟合公式所得TOF吸收信号的误差将增大到20%。     

Be(d,n)反应中子源能谱测量及应用

 利用中子飞行时间技术和BC501A液体闪烁探测器的粒子分辨特性,测量了0°方向、20 MeV氘束轰击厚金属铍靶反应产生的中子源能谱,测量的中子能谱范围为0.7～25.0 MeV。在60°方向放置芪晶体闪烁探测器,由刻度好的BC501A液体闪烁探测器归一校正后,用于中子源强度监测。利用Be(d, n) 反应中子源,采用单粒子灵敏度标定方法,实验标定了0.75~15.75 MeV能量范围内的薄膜闪烁探测器中子能量响应曲线,实验结果与蒙特卡罗模拟计算结果在8%的不确定度范围内一致。     

原子吸收光谱法测定磷酸酯化梨渣吸附的Cr（Ⅵ）离子

通过原子吸收光谱法研究了在不同pH值、吸附剂量、吸附质浓度和吸附时间条件下磷酸酯化改性梨渣吸附Cr（Ⅵ）离子的效果。溶液初始pH 4.5时,Cr（Ⅵ）离子的吸附达到最大值;酯化梨渣≥10g.L-1能除去Cr（Ⅵ）为100μg.L-1溶液中的86.5%的Cr（Ⅵ）离子。酯化梨渣对Cr（Ⅵ）离子的吸附符合Langmuir等温模型,其最大吸附能力为67.56μg.g-1。Cr（Ⅵ）离子达到吸附平衡的时间为90min,准一级反应动力学方程可描述酯化梨渣对Cr（Ⅵ）离子的吸附过程。     

探测器偏置重建算法在工业CT检测中的应用

工业CT检测对象的大小是不固定的,最大限度地利用已有探测器的成像面积非常重要。采用探测器偏置来获得更大的扫描视野,并推导相应的重建算法。该算法首先使用Parker类型函数对采集到的投影数据中的冗余部分进行加权,然后采用扇束滤波反投影重建算法重建得到断层图像。在实验中使用实际工业CT系统分别采集钢制线对块与铝合金变速器外壳的投影数据进行重建算法的验证,重建结果证明了使用的探测器偏置重建算法的正确性与有效性,且空间分辨率和标准扫描的重建结果保持一致,这个方法可以在工业CT成像上有效使用。     

二维磁光阱产生铯原子束的数值模拟

通过分析铯原子在σ+-σ-组态的圆偏振光照射下塞曼子能级的分布情况,构造铯原子在二维磁光阱(2D-MOT)中的受力模型,利用龙格-库塔方法求解铯原子的运动方程,实现原子束产生过程的三维模拟。得出原子束流量随小孔半径、铯原子蒸汽压、激光光强、激光失谐量、磁场梯度等的变化规律。与实验数据进行比较表明受力模型的正确性, 该方法能直观模拟原子束的产生,准确揭示原子束流量随各项参数的变化规律,为实验提供理论指导。     

Scaling properties of fracture surfaces on glass strengthened by ionic exchange

In this work the results of the statistical topometric analysis of fracture surfaces of soda-lime-silica glass with and without ionic exchange treatment are reported. In this case, the mechanism of substitution is K⁺-Na⁺. atomic force microscopy (AFM) was employed to record the topometric data from the fracture surface. The roughness exponent (ζ) and the correlation length (ξ) were calculated by the variable bandwidth method. The analysis for both glasses (subjected and non-subjected to ionic exchange) for ζ shows a value ∼0.8, this value agrees well with that reported in the literature for rapid crack propagation in a variety of materials. The correlation length shows different values for each condition. These results, along with those of microhardness indentations suggest that the self-affine correlation length is influenced by the complex interactions of the stress field of microcracks with that resulting from the collective behavior of the point defects introduced by the strengthening mechanism of ionic exchange.     

用于脉冲γ强度测量的Ф60,1000μmPIN探测器

采用电阻率为10000—20000Ω.cm的高阻单晶硅材料,研制成功灵敏区尺寸为60mm,耗尽层厚度~1000μm的大面积厚PIN半导体探测器.设计了该类探测器厚度测量专用的反冲质子测量系统,对探测器的时间响应、γ灵敏度、漏电流、γ/n分辨等物理参数进行了测量和分析,结果表明,这类探测器可满足低强度裂变n/γ混合场中脉冲γ强度测量的需要.     

Temperature dependent responsivity of quantum dot infrared photodetectors

Temperature dependent behavior of the responsivity of InAs/GaAs quantum dot infrared photodetectors was investigated with detailed measurement of the current gain. The current gain varied about two orders of magnitude with 100 K temperature change. Meanwhile, the change in quantum efficiency is within a factor of 10. The dramatic change of the current gain is explained by the repulsive coulomb potential of the extra carriers in the QDs. With the measured current gain, the extra carrier number in QDs was calculated. More than one electron per QD could be captured as the dark current increases at 150 K. The extra electrons in the QDs elevated the Fermi level and changed the quantum efficiency of the QDIPs. The temperature dependence of the responsivity was qualitatively explained with the extra electrons.