低能N+离子注入对加工番茄的辐照效应

本研究以87-5制罐番茄种子为处理材料,用N 离子作为诱变源,以35keV的能量,分别以20次、40次、50次、60次脉冲,注入剂量2×1016N /cm2、4×1016N /cm2、6×1016N /cm2、10×1016N /cm2进行激发诱变,变异显著.表现为出苗率降低,座果提前.在果实的品质性状变化不大情况下,座果数明显增加,部分处理材料的产量明显提高.     

Nonlinear Diffusion Processes

We study elliptic systems of strongly nonlinear first-order differential equations in complex form on the plane. For such systems we develop the theory of Hilbert boundary value problems which is very much similar to the well-known theory for a holomorphic vector. Systems of nonlinear elliptic equations describe problems of interaction of several nonlinear stationary processes in the diffusive and convective mass and heat transport by hydrodynamic fluid flows.     

超导氧化物La1.85Sr0.15CuO4/超高分子量聚乙烯复合材料的输运性质

采用热压法获得了具有不同混合比例的超导氧化物La1.85Sr0.15CuO4/超高分子量聚乙烯导电复合材料,并利用x射线衍射、扫描电子显微镜和标准四引线方法对复合材料的结构和低温电输运性质进行测量.实验结果显示,超导氧化物La1.85Sr0.15CuO4颗粒随机分布在聚合物本体中,相互间没有连接构成网络结构.在正常态下,复合材料的电阻-温度变化曲线给出类半导体行为.但对应于超导氧化物La1.85Sr0.15CuO4的超导转变温度Tc处,复合材料的电阻-温度变化曲线出现了极小值.室温下电阻率ρ随外加电场强度E的变化曲线测量结果表明,ρ-E曲线为一线形关系,随着电场强度E增加,电阻率ρ下降.文中对可能存在的导电机制进行分析,结果表明隧道贯穿模型可以很好地解释复合材料的导电机制.另外,外加电场强度E对复合材料的电输运特性有明显的影响.     

双阱结构含时量子输运的微扰论及输运方程

利用Lewis-Riesenfeld不变量理论和与不变量有关的幺正变换方法研究了双阱结构含时量子 输运的微扰论.获得了双阱内含时薛定谔方程的精确解的完备集，在此基础上，把双阱与左 右热库的相互作用作为微挠，获得了双阱结构一阶近似下的输运方程，并在绝热近似下提供 了一种用于研究量子输运过程中几何相因子(Berry相因子)的方法. 关键词： 含时量子输运 输运方程 不变量 几何相因子     

Carrier diffusion in InGaAs/GaAs quantum wells grown on vicinal GaAs(0 0 1) substrates

We have investigated the influence of vicinal GaAs substrates on the optical and electronic properties of InGaAs/GaAs quantum wells (QWs). A single In_0.10Ga_0.90As QW was grown by molecular-beam epitaxy on a vicinal GaAs(0 0 1) substrate with a miscut angle of 0° (nominal), 2°, 4° and 6° towards [1 1 0]. The carrier diffusion was obtained by a micro-photoluminescence scan technique that permits to observe the effective diffusion length characterized by the lateral spread of carriers in the QW followed by radiative recombination. The carrier diffusion length was obtained parallel (L_||) and perpendicular (L) to the atomic steps. The diffusion length decreases as the temperature increases up to 100 K. Above this temperature we found different behaviours that depend on the sample miscut angle.     

SHI induced modification in CR-39 polycarbonate by positron annihilation lifetime studies

CR-39 is a polycarbonate widely used as SSNTD for recording nuclear charged particles and in other applications. Latent ion tracks produced in the polymers due to the damage produced by the passage of Swift Heavy Ions contain amorphous material with highest degree of disorder, changing the free volume properties which have strong correlation with the macroscopic properties of the material. Positron annihilation lifetime spectroscopy (PALS) provides direct information about the dimension, content and hole size distribution of free volume in polymers. The effect of irradiation of ⁴⁰Ar (14.9 MeV/n) ions on CR-39 polycarbonate by Positron Annihilation Lifetime Spectroscopy (PALS) is reported here. PALS provides a non-destructive and non-interfering probe, having high detection efficiency for free volume hole properties. From o-Ps lifetime mean free volume hole radius and average free volume of the micro-voids have been calculated. PAL measurement shows an increase in free volume on irradiation.     

Computational Electrochemistry: A Model to Studying Ohmic Distortion of Voltammetry in Multiple Working Electrode,Microfluidic Devices,an Adaptive FEM Approach

Characteristics of mass transport and potential distribution applicable to microfluidic electrochemical flow cell devices has been modelled using the finite element method. A flexible, automatic grid generation algorithm has been combined with an a‐posteriori error indication technique presented by Nann and Heinze to allow irregular cell geometries to be modelled. The code has been applied to the problem of steady state generator – detector linear sweep voltammetry in a channel flow cell showing the effects of IR drop on the voltammetric response of each electrode.     

Na离子和Cl离子引起He原子直接多重电离过程的研究

利用2～8 MeV的Naq+、Clq+(q=2,3,4,5)轰击氦原子,对碰撞的直接多重电离过程进行研究.实验采用反冲离子-散射离子飞行时间符合技术,通过反冲离子飞行时间谱区分不同价态反冲离子;利用静电偏转和位置灵敏探测技术区分不同电荷态散射离子;结合CAMAC-PC多参数获取系统得到一定价态散射离子所对应的反冲离子电荷态分布谱;经分析该谱得到直接多重电离截面与直接单电离截面之比R21.讨论了R21随入射离子速度和电荷态的变化关系.