偶奇q相干态的振幅k次方(k>3)压缩性质

研究结果表明,只有当以k>3)为奇数时,偶q相干态呈现振幅k次方压缩性质;无论k为偶数还是奇数,奇q相干态均不呈现压缩性质。     

Residual stress/strain analysis in thin films by X-ray diffraction

Residual stresses are found in the majority of multilayer thin film structures used in modem technology. The measurement and modeling of such stress fields and the elucidation of their effects on structural reliability and device operation have been a “growth area” in the literature, with contributions from authors in various scientific and engineering disciplines.

In this article the measurement of the residual stresses in thin film structures with X-ray diffraction techniques is reviewed and the interpretation of such data and their relationship to mechanical reliability concerns are discussed.     

铁磁金属量子阱态的共振隧穿

非铁磁金属层中的量子阱态在磁输运过程中的重要性已被广泛认识．铁磁金属层中自旋极化的量子阱态以前并没有详尽的理论研究；实验上也没有清晰地观测到自旋极化量子阱态的隧穿．文章介绍了最近由卢仲毅、张晓光和Pantelides预言的Fe／MgO／FeO／Fe／Cr和其他铁磁量子阱隧道结中的共振隧穿，并解释铁、钴、铬的△1能带的对称性在这种共振隧穿中的作用．     

Static observables of relativistic three-fermion systems with instantaneous interactions

We show that static properties like the charge radius and the magnetic moment of relativistic three-fermion bound states with instantaneous interactions can be formulated as expectation values with respect to intrinsically defined wave functions. The resulting operators can be given a natural physical interpretation in accordance with relativistic covariance. We also indicate how the formalism may be generalized to arbitrary moments. The method is applied to the computation of static baryon properties with numerical results for the nucleon charge radii and the baryon octet magnetic moments. In addition, we make predictions for the magnetic moments of some selected nucleon resonances and discuss the decomposition of the nucleon magnetic moments in contributions of spin and angular momentum, as well as the evolution of these contributions with decreasing quark mass.     

On the role of the interface charge in non-ideal metal–semiconductor contacts

The bias dependent interface charge is considered as the origin of the observed non-ideality in current–voltage and capacitance–voltage characteristics. Using the simplified model for the interface electronic structure based on defects interacting with the continuum of interface states, the microscopic origin of empirical parameters describing the bias dependent interface charge function is investigated. The results show that in non-ideal metal–semiconductor contacts the interface charge function depends on the interface disorder parameter, density of defects, barrier pinning parameter and the effective gap center. The theoretical predictions are tested against several sets of published experimental data on bias dependent ideality factor and excess capacitance in various metal–semicoductor systems.     

Deformed photon-added entangled squeezed vacuum and one-photon states: Entanglement,polarization, and nonclassical properties

In this paper, after a brief review on the entangled squeezed states, we produce a new class of the continuous-variabletype entangled states, namely, deformed photon-added entangled squeezed states. These states are obtained via the iterated action of the f-deformed creation operator A = f(n)aon the entangled squeezed states. In the continuation, by studying the criteria such as the degree of entanglement, quantum polarization as well as sub-Poissonian photon statistics, the twomode correlation function, one-mode and two-mode squeezing, we investigate the nonclassical behaviors of the introduced states in detail by choosing a particular f-deformation function. It is revealed that the above-mentioned physical properties can be affected and so may be tuned by justifying the excitation number, after choosing a nonlinearity function. Finally, to generate the introduced states, we propose a theoretical scheme using the nonlinear Jaynes–Cummings model.     

Phase transition and optoelectronic properties of MgH2

In this article, structural and electronic properties of MgH₂ have been studied. The aim behind this study was to find out the ground state crystal structure of MgH₂. For the purpose, density functional theory (DFT)-based full-potential linearized augmented plane wave (FP-LAPW) calculations have been performed in three different space groups: P4₂/mnm (α-MgH₂), Pa3 (β-MgH₂) and Pbcn (γ-MgH₂). It has been found that the ground state structure of MgH₂ is α-MgH₂. The present study shows that α-MgH₂ transforms into γ-MgH₂ at a pressure of 0.41 GPa. After further increase in pressure, γ-MgH₂ transforms into β-MgH₂ at a pressure of 3.67 GPa. The obtained results are in good agreement with previously reported experimental data. In all the studied phases, the behavior of MgH₂ is insulating and its optical conductivity is around 6.0 eV. The α-MgH₂ and γ-MgH₂ are anisotropic materials while β-MgH₂ is isotropic in nature.     

Topological nature of in‐gap bound states in disordered large‐gap monolayer transition metal dichalcogenides

We propose a physical model based on disordered (a hole punched inside a material) monolayer transition metal dichalcogenides (TMDs) to demonstrate a large‐gap quantum valley Hall insulator. We find an emergence of bound states lying inside the bulk gap of the TMDs. They are strongly affected by spin–valley coupling, rest‐ and kinetic‐mass terms and the hole size. In addition, in the whole range of the hole size, at least two in‐gap bound states with opposite angular momentum, circulating around the edge of the hole, exist.Their topological insulator (TI) feature is analyzed by the Chern number, characterized by spacial distribution of their probabilities and confirmed by energy dispersion curves (energy vs. angular momentum). It not only sheds light on overcoming low‐temperature operating limitation of existing narrow‐gap TIs, but also opens an opportunity to realize valley‐ and spin‐qubits. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Bound states of Dirac fermions in monolayer gapped graphene in the presence of local perturbations

In graphene,conductance electrons behave as massless relativistic particles and obey an analogue of the Dirac equation in two dimensions with a chiral nature.For this reason,the bounding of electrons in graphene in the form of geometries of quantum dots is impossible.In gapless graphene,due to its unique electronic band structure,there is a minimal conductivity at Dirac points,that is,in the limit of zero doping.This creates a problem for using such a highly motivated new material in electronic devices.One of the ways to overcome this problem is the creation of a band gap in the graphene band structure,which is made by inversion symmetry breaking(symmetry of sublattices).We investigate the confined states of the massless Dirac fermions in an impured graphene by the short-range perturbations for "local chemical potential" and "local gap".The calculated energy spectrum exhibits quite different features with and without the perturbations.A characteristic equation for bound states(BSs) has been obtained.It is surprisingly found that the relation between the radial functions of sublattices wave functions,i.e.,f_m~+(r),g_m~+(r),and f_m~-(r),g_m~-(r),can be established by SO(2) group.     

Quantum Zeno dynamics in atoms and cavities

Quantum Zeno Dynamics restricts the evolution of a system in a tailorable subspace of the Hilbert space by repeated measurements of a proper observable. This restricted dynamics can be counterintuitive and lead to the generation of interesting nonclassical states. We describe an experiment implementing the Zeno dynamics in an atomic Rydberg level manifold, and we propose an implementation in the cavity quantum electrodynamics context. Both systems open promising perspectives for quantum-enabled metrology and decoherence studies.