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61.
This paper introduces a relative structural complexity measure for the characterization of disordered surfaces. Numerical solutions of 2d+1 KPZ equation and scanning force microscopy (SFM) patterns of porous silicon samples are analyzed using this methodology. The results and phenomenological interpretation indicate that the proposed measure is efficient for quantitatively characterize the structural complexity of disordered surfaces (and interfaces) observed and/or simulated in nano, micro and ordinary scales. 相似文献
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64.
Abdul Al MortuzaMd. Hafijur Rahman Sinthia Shabnam MouMd. Johurul Islam Abu Bakar Md. Ismail 《Current Applied Physics》2012,12(2):565-569
The structural, electrical and optical characteristics of porous silicon (PS) due to the impregnation of LaF3 into PS by a novel chemical-bath deposition (CBD) technique have been investigated in this article. Without removing the PS from the anodization chamber the impregnation with LaF3 has been done by reacting LaCl3 with HF in the same chamber at room temperature. The impregnation of LaF3 was confirmed by the SEM on the cross-section of the LaF3/PS/Si system and EDX. The modification of PS surface by LaF3 had direct influence on the electrical and optical properties of PS. Electrical properties of Ag/LaF3/PS/p-Si/Ag structures were studied through the current-voltage (I-V) and capacitance-voltage (C-V) characteristics. Formation of metal-insulator-semiconductor (MIS) diode was evident whose forward current increased with annealing. A diode factor of about 2.4 has been obtained for the annealed heterostructure indicating a high density of trap states. The C−2-V curves of all samples showed negative flat band voltage of around −2 V confirming a large number of fixed positive charges in the LaF3. The photoluminescence (PL) intensity of the LaF3-impregnated PS showed aging for the as-deposited samples, but when annealed PS structure recovered the PL intensity. Experimental results show that the optimized chemical bath passivation process for the LaF3 on porous silicon could enable the porous silicon to be an important material for photonic application. 相似文献
65.
This paper presents a facile, low-cost and pollution-free route to prepare porous metal oxide nanomaterials. Hierarchically assembled ZnO microstructures with multi-scaled porosity were obtained by calcining the flower-like assembly of a basic zinc carbonate (BZC) precursor which was synthesized by a facile low-temperature (100 °C) homogenous precipitation without using any organic solvent or surfactant. A gas sensor based on the porous ZnO sample exhibited higher response to ethanol and formaldehyde gases than commercial ZnO powder. The facile preparation method and the improved property derived from the hierarchically porous microstructure are of great significance in the synthesis and application of nanomaterials. 相似文献
66.
In this work, porous graphite nanofibers (PGNFs) were manufactured as promising catalyst supporter by a physical activation method for direct methanol fuel cells, and Pt nanoparticles were loaded on the PGNFs in order to prepare electrode materials by a chemical reduction method. The pore structures of the Pt/PGNFs were analyzed by N2 adsorption isotherms at 77 K. Electrocatalytic activities of final products were investigated by voltammetry and conductivity measurements in a 1.0 M CH3OH/0.5 M H2SO4. As a result, electrocatalytic activities of Pt/PGNFs were increased in the presence of Pt particles on the PGNFs and with increasing the specific surface area of the carbons. 相似文献
67.
在覆盖有钨电极的硅衬底上利用多孔阳极氧化铝模板为生长掩膜电沉积合成垂直排列的铜铟硒纳米棒阵列. 多孔阳极氧化铝模板由阳极氧化磁控溅射制备的铝膜制成. 扫描电子显微镜结果表明,该纳米棒阵列结构致密,直径约100 nm长度约1μm,纵横比为10. X射线衍射、微区拉曼光谱和高分辨透射电子显微镜结果表明,真空条件下450 oC退火处理的铜铟硒纳米棒是多晶纯相的黄铜矿结构的铜铟硒,在纳米棒轴向方向上有比较大的晶粒尺寸. 能量色散X射线光谱表明,铜铟硒纳米棒的化学组成接近InSe2的化学计量比,由吸收光谱分析推算铜铟硒纳米棒带隙为0.96 eV. 相似文献
68.
Hydrophobic surfaces on Mechanical stable macroporous silicon films were prepared by electrochemical etching with subsequent octadecyltrichlorosilane (OTS) modification. The surface morphologies were controlled by current densities and the mechanical properties were adjusted by their corresponding porosities. Contrast with the smooth macroporous silicon films with lower porosities (34.1%) and microporous silicon with higher porosities (97%), the macroporous film with a rough three-dimension (3D) surface and a moderate pore to cross-section area ratio (37.8%, PSi2′) exhibited both good mechanical strength (Yong’ modulus, shear modulus and collapse strength are 64.2, 24.1 and 0.32 GPa, respectively) and surface superhydrophobicity (water contact angle is 158.4 ± 2° and sliding angle is 2.7 ± 1°). This result revealed that the surface hydrophobicities (or the surface roughness) and mechanical strength of porous films could be conciliated by pore to cross-section area ratios control and 3D structures construction. Thus, the superhydrophobic surfaces on mechanical stable porous films could be obtained by 3D structures fabrication on porous film with proper pore to cross-section area ratios. 相似文献
69.
Based on a modified-Darcy–Brinkman–Maxwell model, stability analysis of a horizontal layer of Maxwell fluid in a porous medium heated from below is performed. By solving the eigenvalue problems, the critical Rayleigh number, wave number and frequency for overstability are determined. It is found that the critical Rayleigh number for overstability decreases as the relaxation time increases and the elasticity of a Maxwell fluid has a destabilizing effect on the fluid layer in porous media. On the other hand, the critical Rayleigh number for overstability increases by increasing the porous parameter which acts to stabilize the system. In limiting cases, some previous results for viscoelastic fluids in nonporous media are recovered from our results. 相似文献
70.
The photoluminescence of porous silicon with and without carbon deposition fabricated by plasma-enhanced chemical vapor deposition technique has been investigated. After the deposition, the rapid thermal processes in the temperature ranging from 500 to 1100 °C have been carried out. It was found that after the carbon deposition a new intense blue emission appeared. The rapid thermal processes at 800and 900 °C could enhance the blue emission, while the other rapid thermal processes quenched it. Finally, the mechanism for the effect of carbon deposition and rapid thermal processes on photoluminescence properties of porous silicon was discussed. 相似文献