一种简便的计算层析系统X射线硬化校正方法

以实物拍摄为依据,用一种最简便的修正方法解决计算机X射线层析术成像时由于硬化效应引起的切片图灰度失真问题。用高性能数字X射线机FAXITRON MX-20(射线管焦点20μm,探测板灰度等级16位)对不同厚度的物体进行透射成像,测得对应的透射光强度,并利用新创的指数拟合法得到理想的拟合曲线,由此推导硬化效应的指数校正公式;最后利用实验室的微型计算机层析设备进行扇形束扫描,并逆投影重建生成计算层析断层图像,验证了该校正方法的实用性。该指数拟合法的误差不到常用的二阶多项式拟合法的1/3,对物体计算层析重构,硬化校正以前有明显的“杯状”伪迹,切片灰度不均匀,用指数法修正以后该伪迹消失,切片灰度均匀。     

直接扣除法测量半导体光放大器频率响应

在光电子器件散射参量定义的基础上建立了基于直接扣除法的半导体光放大器频率响应测量系统,测量中通过扣除激光器和探测器系统的频率响应,得到放大器固有的频率响应。对InGaAsP体材料行波腔半导体光放大器样品进行了测量,得到了放大器在不同注入光功率和不同偏置电流下的频率响应曲线。这些曲线很好地反应了半导体光放大器的增益饱和和噪声特性,进一步分析发现半导体光放大器对低频调制信号的放大能力弱于对高频信号的放大能力,分析认为其原因在于半导体光放大器的载流子寿命有限导致低频信号长时间消耗载流子时,载流子数量无法及时恢复,从而使得增益降低。     

GeV能量的Fe离子在C60薄膜中的辐照效应研究

利用傅立叶转换红外光谱和Raman谱仪分析了0.98 GeV的Fe离子在电子能损Se为3.5 keV/nm时， 不同辐照剂量（5×1010 —8×1013 ions/cm2)下， 在C60薄膜中引起的辐照损伤效应。 分析表明， Fe离子辐照引起了C60分子的聚合与损伤。 在辐照剂量达到一中间值1×1012 ions/cm2， C60分子的损伤得到部分恢复， 归因于电子激发引起的退火效应。 通过对Raman数据的拟合分析， 演绎出Fe离子辐照在C60材料中形成的潜径迹截面或引起损伤的截面约为1.32×10-14 cm2。     

Molecular parameters describing intermolecular interactions in the electrooptical Kerr effect

Electrooptical Kerr effect has been studied in binary solutions of a dipolar liquid (-picoline, β-picoline) in a non-dipolar solvent (benzene, p-xylene) and 1,4-dioxane in the full range of concentrations of the dipolar component (0 ≤ f₂ ≤ 1). The experimental Kerr constant K_s of the solutions, refraction index n_s, density ρ_s and the dielectric constant ε_s have been measured and used for the calculation of the molar Kerr constants K_S^M within the Onsager local field model. Analysis of changes in the molar Kerr constants as a function of the solute concentration by fits of theoretical functions to the experimental ones has permitted a determination of the parameters characterizing intermolecular interactions in binary solutions.     

Implications of the nuclear EMC effect

The discovery more than twenty years ago, by the EMC Collaboration, that the deep-inelastic-scattering DIS structure functions are influenced by the nuclear environment stunned the nuclear physics community and brought quarks and gluons into the field with great impact. A great length of time has passed, but despite a semi-infinite number of papers on the subject, there is no explanation that is universally accepted. Many models (related in one way or another to QCD) have been successful in reproducing data for deep inelastic scattering on nuclear targets, but fewer have described both the DIS and nuclear Drell-Yan experiments. Although there are some positive indications, no model has been used to predict correctly and unambiguously new independent phenomena. We review the history and discuss the best experimental prospects for future discovery.     

Method for estimating the influence of an external electric field on the probability of photochemical transformations

We propose an approach to estimating the influence of a strong external electric field on the probability of photochemical transformations. The approach is based on an analysis of the appearance or disappearance of the resonance levels of interacting subsystems that are necessary for the chemical transformation and the change of overlap integral of the corresponding wave functions. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 4, pp. 543–545, July–August, 2007.     

K-shell ionization cross section of aluminium induced by low-energy highly charged argon ions

Al K-shell X-ray yields are measured with highly charged Ar^q+ ions (q=12–16) bombarding against aluminium. The energy range of the Ar ions is from 180 to 380 keV. K-shell ionization cross sections of aluminium are also obtained from the yields data. The experimental data is explained within the framework of 2pπ -2pσ rotational coupling. When Ar ions with 2p-shell vacancies are incident on aluminium, the vacancies begin to reduce. Meanwhile, collisions against Al atoms lead to the production of new 2p-shell vacancies of Ar ions. These Ar 2p-shell vacancies will transfer to the 1s orbit of an Al atom via 2pπ-2pσ rotational coupling leading to the emission of a K-shell X-ray of aluminiun. A model is constructed based on the base of the above physical scenario. The calculation results of the model are in agreement with the experimental results.     

Quantum dynamics of tight-binding networks coherently controlled by external fields

With some reviews on the investigations on the schemes for quantum state transfer based on spin systems, we discuss the quantum dynamics of magnetically-controlled networks for Bloch electrons. The networks are constructed by connecting several tight-binding chains with uniform nearest-neighbor hopping integrals. The external magnetic field and the connecting hopping integrals can be used to control the intrinsic properties of the networks. For several typical networks, rigorous results are shown for some specific values of external magnetic field and the connecting hopping integrals: a complicated network can be reduced into a virtual network, which is a direct sum of some independent chains with uniform nearest-neighbor hopping integrals. These reductions are due to the fermionic statistics and the Aharonov-Bohm effects. In application, we study the quantum dynamics of wave packet motion of Bloch electrons in such networks. For various geometrical configurations, these networks can function as some optical devices, such as beam splitters, switches and interferometers. When the Bloch electrons as Gaussian wave packets input these devices, various quantum coherence phenomena can be observed, e.g., the perfect quantum state transfer without reflection in a Y-shaped beam, the multi-mode entanglers of electron wave by star-shaped network, magnetically controlled switches, and Bloch electron interferometer with the lattice Aharonov-Bohm effects. With these quantum coherent features, the networks are expected to be used as quantum information processors for the fermion system based on the possible engineered solid state systems, such as the array of quantum dots that can be implemented experimentally.      

Influence of the stress on magnetoelectric effect in magnetostrictive-PZT bilayers

In this letter, we investigate the influence of the stress on magnetoelectric (ME) effect in a magnetostrictive-PZT bilayer. ME voltage coefficient α*_E = δE / δH, where δE is the induced electric field for an applied alternating current (ac) magnetic field δH, is obtained by solving the stress-related piezoelectric constitutive equation and the conventional magnetostrictive equation with appropriate boundary condition. Based on the free-energy density function of the PZT film in stress state, we get the stress-related piezoelectric charge coefficient ^p d*₃₁ and dielectric permittivity ^pε*₃₃. After taking the cobalt ferrite (CFO) as magnetostrictive phase, it is found that α*_E increases with decreasing 2-d compressive stress for CFO-PZT, which not only is qualitatively consistent with previous experimental measurements, but also provides a possible route to improve the ME effect.      

On the Time‐Resolved Optogalvanic Spectra of Neon and Krypton

In this work time resolved optogalvanic signals associated with transitions excited from the first metastable state of neon and krypton have been studied. These gases have similar energy state configurations and it is of significant interest to study their time resolved optogalvanic waveforms resulting from transitions belonging to the states of same quantum numbers. The experimentally observed optogalvanic signals recorded for different discharge currents have been fitted to a theoretical model to obtain parameters that determine amplitudes, instrumental time constants and decay rates of the 1s levels. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)