Surface structure of In/Si(1 1 1) studied by reflection high-energy positron diffraction

We have investigated a quasi-one-dimensional structure of In/Si(1 1 1) surface using reflection high-energy positron diffraction (RHEPD), which is sensitive to the topmost surface structure under the total reflection condition. From the rocking curves, we found that In atoms are located at two different vertical positions, i.e., 0.99 Å and 0.55 Å from the Si zigzag chain in both 4 × 1 (210 K) and 8 × 2 (60 K) phases.     

Experimental and theoretical assessment of Fe-doped indium-oxide-based dilute magnetic semiconductors

Specimens of iron-doped indium oxide (In_1-xFe_x)₂O₃ with x?=?0.015, 0.03, 0.045 and 0.06, amalgamated through a traditional solid-state reaction method followed by H₂/air sintering, were characterised using an X-ray diffractometer (XRD), a vibrating sample magnetometer (VSM), and a scanning electron microscope (SEM) to investigate their structural, magnetic and morphological properties respectively. According to XRD plots, all the specimens exhibit cubic bixbyite structures along with ancillary phases. Magnetic assessment showed that In₂O₃ has a negative susceptibility, exhibiting diamagnetic behaviour at room temperature. The doping of Fe ions induces ferromagnetic (FM) ordering, which is enhanced with increasing doping content. The strength of the magnetisation increases when the specimens are exposed to H₂ but is reduced on further air sintering. A bound magnetic polaron (BMP) model is successfully fitted to the observed FM data involving localised carriers and magnetic cations. A multivariate assessment viz. a hierarchical cluster analysis (HCA) was used to corroborate and strengthen the experimental determined magnetic properties. A homogeneous particle distribution was observed in all SEM micrographs and is validated through MATLAB-based simulation by applying a watershed segmentation algorithm. Surface plots also confirm the change in magnetic properties with increase in doping concentration.     

Surface tension and density measurements for indium and uranium using a sessile-drop apparatus with glow discharge cleaning

The sessile-drop method is used to measure the surface tension and density of liquid indium and uranium under high vacuum. Measurements are made over the temperature range 156–500°C for In and at the melting point for U. Surface oxides are efficiently removed with a glow discharge system. Drop profiles are captured by photograph and processed using nonlinear regression to yield the surface tension and density. In this regression procedure, normal distances from calculated profiles to data points are minimized. For indium, the density and surface tension measurements yield _mp = 7.05 × 10³kg/m³, d/dT = −0.776 kg/m³·°C, and γ_mp = 0.568 N/m, dγ/dT = −9.45 × 10⁻⁵ N/m·°C. The results for uranium at the melting point are _mp = 17.47 × 10³ kg/m³ and γ_mp = 1.653 N/m.     

Zur Kristallstruktur von Li3InCl6

Ternary Halides of the A₃MX₆ Type. VIII On the Crystal Structure of Li₃InCl₆ Colorless single crystals of Li₃InCl₆ are obtained from a 3 : 1 molar mixture of LiCl and InCl₃ via Bridgman‐type crystal growth. The crystal structure (monoclinic, C2/m, Z = 2, a = 643.2(3), b = 1109.3(3), c = 639.8(3) pm, β = 109.8(1)° R₁ = 0.0549, wR₂ = 0.1364 (all data) may be derived from the AlCl₃‐type of structure as was previously also found for the bromides Li₃MBr₆ (M = Sm–Lu, Y) and iodides Li₃MI₆ (M = Er–Yb, Y).     

Reaktionen von R4Sb2 (R = Me,Et) mit (Me3SiCH2)3M (M = Ga,In) und Kristallstrukturen von [(Me3SiCH2)2InSbMe2]3 und [(Me3SiCH2)2GaOSbEt2]2

Reactions of R₄Sb₂ (R = Me, Et) with (Me₃SiCH₂)₃M (M = Ga, In) and Crystal Structures of [(Me₃SiCH₂)₂InSbMe₂]₃ and [(Me₃SiCH₂)₂GaOSbEt₂]₂ The reaction of (Me₃SiCH₂)₃In with Me₂SbSbMe₂ gives [(Me₃SiCH₂)₂InSbMe₂]₃ ( 1 ) and Me₃SiCH₂SbMe₂. [(Me₃SiCH₂)₂GaOSbEt₂]₂ ( 2 ) is formed by the reaction of (Me₃SiCH₂)₃Ga with Et₂SbSbEt₂ and oxygen. The syntheses and the crystal structures of 1 and 2 are reported.     

The first indium-organic two-dimensional layer network with rhombus grids

The indium(III)-organic compound [In(HBtc)₂(4,4′-bpy)](4,4′-Hbpy)(H₂O)_0.5 (Btc=1,3,5-benzenetricarboxylate, 4,4′-bpy=4,4′-bipyridine) has been synthesized under hydrothermal condition and characterized by IR, fluorescent spectroscopy, TGA and single-crystal X-ray diffraction analyses. The compound crystallizes in monoclinic, space group P2(1)/c, a=17.0884(2) Å, b=12.28390(10) Å, c=17.9456(4) Å, β=104.1920(10)°, V=3652.03(10) Å³, Z=4, R₁=0.0572 and wR₂=0.1116 [I>2σ(I)]. All the indium atoms in the compound are hepta-coordinated and link 1,3,5-benzenetricarboxylate forming a 2-D layer structure with rhombus grids.     

1,2‐Dithioquadratato‐ und 1,2‐Dithiooxalatoindate(III)

Indium(III) chloride forms in water with potassium 1,2‐dithiooxalate (dto) and potassium 1,2‐dithiosquarate (dtsq) stable coordination compounds. Due to the higher bridging ability of the 1,2‐dithiooxalate ligand in all cases only thiooxalate bridged binuclear complexes were found. From 1,2‐dithioquadratate with an identical donor atom set mononuclear trischelates could be isolated. Five crystalline complexes, (BzlMe₃N)₄[(dto)₂In(dto)In(dto)₂] ( 1 ), (BzlPh₃P)₄[(dto)₂In(dto)In(dto)₂] ( 2 ), (BzlMe₃N)₃[In(dtsq)₃] ( 3 ), (Bu₄N)₃[In(dtsq)₃] ( 4 ) and (Ph₄P)[In(dtsq)₂(DMF)₂] ( 5 ), have been isolated and characterized by X‐ray analyses. Due to the type of the complex and the cations involved these compounds crystallize in different space groups with the following parameters: 1 , monoclinic in P2₁/c with a = 14.4035(5) Å, b = 10.8141(5) Å, c = 23.3698(9) Å, β = 124.664(2)°, and Z = 2; 2 , triclinic in P with a = 11.3872(7) Å, b = 13.6669(9) Å, c = 17.4296(10) Å, α = 88.883(5)°, β = 96.763(1)°, γ = 74.587(5)°, and Z = 1; 3 , hexagonal in R3 with a = 20.6501(16) Å, b = 20.6501(16) Å, c = 19.0706(13) Å and Z = 6; 4 , monoclinic in P2₁/c with a = 22.7650(15) Å, b = 20.4656(10) Å, c = 14.4770(9) Å, β = 101.095(5)°, and Z = 4; 5 , triclinic in P with a = 9.2227(6) Å, b = 15.3876(9) Å, c = 15.5298(9) Å, α = 110.526(1)°, β = 100.138(1)°, γ = 101.003(1)°, and Z = 2.     

A useful synthetic equivalent of an acetone enolate

2-Methoxymethoxy-3-chloropropene derived organometallics act as synthetic equivalents of an acetone enolate. Indium-promoted reaction of this reagent with aldehydes affords aldol adducts in moderate to excellent yields. When the reaction was performed with zinc, aldol products were isolated in protected form as the corresponding MOM-enol ethers.