Impurity optical absorption in parabolic quantum well

Optical absorption in GaAs parabolic quantum well in the presence of hydrogenic impurity is considered. The absorption coefficient associated with the transitions between the upper valence subband and donor ground state is calculated. The impurity ground state wave function and energy are obtained using the variational method. Dependence of the absorption spectra on impurity position in quantum well was investigated. It is shown, that along with quantum well width decrease the absorption threshold shifts to higher frequencies. Results obtained within frames of parabolic approximation are compared with results for rectangular infinite-barrier quantum well case. The acceptor state → conduction band transitions considered as well.     

Modifications of He implantation induced cavities in silicon by MeV silicon implantation

Doppler broadening spectroscopy (DBS) coupled to a slow positron beam has been used to investigate the formation of He-cavities in the presence of high vacancy concentrations in Cz-Si (1 1 1). Si samples were first implanted with MeV Si ions in order to create a damaged Si layer. DBS measurements show the presence of divacancy (SV₂/SSi lattice=1.052,WV₂/WSi lattice=0.83) from the surface up to 4.2 μm depth with a concentration higher than 10¹⁸ cm⁻³. The thickness of this damaged layer was confirmed by spreading resistance measurements. In the second step, samples were implanted with 50 keV ³He with fluence of 10¹⁶ cm⁻². DBS results show that the apparent divancancy concentration decreases at ³He implantation depth ∼435 nm due to ³He passivation of vacancies that occurs during the implantation process. After 900 °C annealing, large defects are detected at depth up to 2 μm and (S, W) values suggest the detection of cavities at the implantation depth. We also report the possible presence of impurity complexes. The formation of these complexes is attributed to the gettering of metallic impurities present in the Si sample.     

ICP—AES法测定高纯二氧化锆中痕量杂质

介绍了高纯二氧化锆中痕量杂质元素Ｆｅ，Ｎａ，Ｓｉ，Ｔｉ的ＩＣＰ－ＡＥＳ测定方法。样品以浓Ｈ２ＳＯ４及（ＮＨ４）２ＳＯ４溶解，采用空白背景校正法消除基体Ｚｒ的光谱干扰，以基体匹配法补偿基体效应。各元素平均回收率为９５％－１０６％，相对标准偏差为１．３％－３．０％。     

Near- and mid-infrared spectroscopy of sol–gel derived ormosils: vinyl and phenyl silicates

The suitability of ormosils as photonic materials was investigated. Vinyl and phenyl silicates were synthesised below 100°C. A detailed assignment of mid-infrared vibrational absorption bands is given. This allowed assignment of overtone and combination bands in the near-infrared region and an assessment of residual water contamination, which is low and can be expelled by evacuation. These ormosils have low intrinsic and extrinsic optical absorption in the visible spectral region and at useful wavelengths in the near-infrared.     

Non-evidence for Z 1 oscillations of the nuclear ion-atom interaction in an amorphous target

Periodic variations in the Z ₁ dependence of the interatomic potential has recently bevlen revealed by a channeling technique. To search for oscillations of similar kind in a target of randomly arranged atoms we have made systematic measurements on the scattering distributions of energetic (32–56 keV) ions in amorphous carbon. Our technique was to transmit light mass ions through carbon foils with a thickness of 2–4 μg/cm². The atomic number of the ions, Z, ranged from 3 to 18. The scattering distribution of the transmitted particles was recorded. From these curves the angular halfwidth,ψ ^1/2, and the relative intensity at a scattering angle 2.5 times ψ ^1/2 was determined. The experimental values are in good agreement with theoretical calculations based on the Thomas-Fermi and Lenz- Jensen potentials. Furthermore, the saturation value of the mean nuclear stopping cross sections for ions scattered in the straight forward direction with a mean energy of 50 keV are given. No evidence for a Z ₁ oscillatory behaviour could be found in any of the three parameters investigated.     

Further experiments on energy transfer from bom barding ions to Na2O containing glasses

Abstract

The kinetics of short-range atomic ordering in austenitic Fe-17 Cr-xNi (x=10-25 wt%) alloys and in Sc-doped alloys has been studied by residual resistivity measurements during isochronal annealing in the temperature range 300-815 K. Dynamics of residual resistivity variations has shown that (i) diffusion in these alloys is observable at temperature above 700 K, (ii) preliminary cold-work deformation as well as doping by Sc atoms forms the disorder atomic structure in the austenitic matrix. It was found that Sc Atoms retard the atomic ordering process and shift it to higher temperatures. The value of temperature shift is increased from 25 to 80 K when the nickel concentration grows up to 25 wt%.     

Electrical and optical properties of Cd1−xZnxS (0x0.18) grown by chemical bath deposition

Cd_1−xZn_xS films with 0x0.18 were grown by chemical bath deposition technique on glass substrates from an aqueous solution containing cadmium and zinc sulfate, ammonia and thiourea. Microstructural features, obtained from X-ray diffraction and scanning electron microscopy (SEM) measurements, reveal a predominance of Wurtzite structure and an homogenous microstructure formed by densely microcrystallines for all the samples studied. Cd_1−xZn_xS semiconductor was found to be resistive and of n-type. Also, the electron density decreases with increased x and the mobility reaches a maximum around x=0.12. Which means that the Cd_1−xZn_xS films at this composition are of high crystalline quality, i.e. having reduced intrinsic defect concentrations.     

Effect of lattice oxygen on optical absorption, radiation hardness and thermally stimulated luminescence of BaF2 crystal

The influence of the presence of BaO impurity on the optical absorption, radiation hardness and thermally stimulated luminescence of BaF₂ has been investigated. The presence of oxygen impurity gives rise to three absorption bands in the UV region, peaking around 220, 280 and 335 nm. Further, the impurity is found to be detrimental to crystal hardness against ionizing radiations. The thermally stimulated luminescence (TSL) has been studied from gamma-irradiated crystals containing different fractions of BaO impurity. Four prominent glow peaks around 100°C (peak I), 150°C (peak II), 220°C (peak III) and 290°C (peak IV) are observed for crystals containing BaO impurity concentrations lower than 0.5% (by wt). For crystals containing higher impurity concentrations, two additional peaks around 75°C and 260°C are also observed. The kinetics of TSL emission is observed to be of first order, implying that the absorption and the emission centers responsible for TSL are the same. The normalized TSL output for peak I is found to vary linearly with the concentration of oxide impurity. This fact can be utilized to detect the presence of minute amounts of oxygen in BaF₂ lattice, which is crucial to the growth of crystals exhibiting high radiation hardness.     

The Henry reaction: spectroscopic studies of nitrile and hydroxylamine by-products formed during synthesis of psychoactive phenylalkylamines

A clandestine two-step route to psychoactive racemic phenylalkylamines utilises the Henry reaction. In the first step an aromatic aldehyde reacts with a nitroalkane to give the nitrostyrene intermediate. In the second step the nitrostyrene is reduced to the phenylalkylamine. An impurity profile of both steps was evaluated through the synthesis and analysis of common street derivatives. The formation of nitrile impurities in the nitroaldol reaction and hydroxylamine impurities in the reduction step were shown by NMR spectroscopy and GC-MS. A selection of reducing agents has been used to give the phenylalkylamines, together with variable quantities of the partially reduced hydroxylamine product. GC-MS analysis of the hydroxylamines showed heat-induced disproportionation which led to the detection of the corresponding oximes.      

Suitability of different containers for the sampling and storage of biogas and biomethane for the determination of the trace-level impurities – A review

The traceable and accurate measurement of biogas impurities is essential in order to robustly assess compliance with the specifications for biomethane being developed by CEN/TC408. An essential part of any procedure aiming to determinate the content of impurities is the sampling and the transfer of the sample to the laboratory. Key issues are the suitability of the sample container and minimising the losses of impurities during the sampling and analysis process. In this paper, we review the state-of-the-art in biogas sampling with the focus on trace impurities. Most of the vessel suitability studies reviewed focused on raw biogas. Many parameters need to be studied when assessing the suitability of vessels for sampling and storage, among them, permeation through the walls, leaks through the valves or physical leaks, sorption losses and adsorption effects to the vessel walls, chemical reactions and the expected initial concentration level. The majority of these studies looked at siloxanes, for which sampling bags, canisters, impingers and sorbents have been reported to be fit-for-purpose in most cases, albeit with some limitations. We conclude that the optimum method requires a combination of different vessels to cover the wide range of impurities commonly found in biogas, which have a wide range of boiling points, polarities, water solubilities, and reactivities. The effects from all the parts of the sampling line must be considered and precautions must be undertaken to minimize these effects. More practical suitability tests, preferably using traceable reference gas mixtures, are needed to understand the influence of the containers and the sampling line on sample properties and to reduce the uncertainty of the measurement.