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11.
Optical absorption and photoluminescence spectroscopies are standard tools for analysis of HgHg1−xCdxTe epitaxial layers in terms of homogeneity of the mole-fraction (x). For technological relevant layer thicknesses of ∼10 μm, both techniques may show dissimilar results, in particular if doped layers are investigated. This is due to defect levels, which impact to the results obtained by both techniques in different ways. We systematically investigate this behavior by analyzing two sets of HgCdTe layers, one set intrinsically doped by Hg-vacancies, the other extrinsically doped by arsenic (As). A model is outlined and applied to the experimental results, which consistently explains even non-monotonous temperature-shifts of the spectra. Eventually, guidelines for optical homogeneity tests are given. While transmission measurements are most reliable, when carried out at low temperature, where the defect level are frozen out, photoluminescence provides best results at ambient temperature, where band-states are increasingly populated. Both approaches help to reveal intrinsic material properties.  相似文献   
12.
By the aid of temperature- and magnetic-field-dependent Hall effect measurements, we have extracted the multi-carrier transport information in N-doped and N–In codoped p- ZnO thin films grown on Si substrates through mobility spectrum analysis. It is found that owing to the compensation between free electrons and holes, the two-dimensional hole gas from ZnO/Si interface layers becomes determinant and results in the high p-type conductivity and high hole mobility in the ZnO samples. Compared with N-doping, the N–In codoping introduces many In donors and increases acceptor incorporation, as well as enhancing the free hole mobility due to the short-range dipole-like scattering.  相似文献   
13.
Structural and optical measurements were performed on silicon carbide (SiC) samples containing several polytypes. The SiC samples investigated were grown on (111) Si substrates by solid source molecular beam epitaxy (SSMBE). Several quantities of Ge were predeposited before the growth procedure. The influence of Ge on the SiC polytypes formation was studied by X-Ray, FTIR and μ-Raman characterizations methods. The spectra of the samples with less than one Ge monolayer exhibit a mixture of 2H, 15R and 3C–SiC polytypes. This mixture is due to the mismatch between the heterostructure layers. We propose that the Ge predeposition in the heterostructure can be used to stabilize and unify the polytypes formation.  相似文献   
14.
We study the interplay between impurity scattering and Coulomb interaction effects in the absorption spectrum of neutral bound magnetoexcitons confined in quantum-ring structures. Impurity scattering breaks the rotational symmetry of the ring system, introducing characteristic features in the optical emission. Signatures of the optical Aharonov–Bohm effect are still present for weak scattering and strong Coulomb screening. Furthermore, an impurity-induced modulation of the absorption strength is present even for a strong impurity potential and low screening. This behavior is likely responsible of recent experimental observations in quantum-ring structures.  相似文献   
15.
Observations are reported in oscillatory torsion tests at room temperature on unfilled and fiber-reinforced polycarbonates melt-blended with impurities (acronitrile–butadiene–styrene, high-impact polystyrene, low-density polyethylene, poly(ethylene terephthalate) and Nylon 6,6). Constitutive equations are derived for the viscoelastic behavior of glassy polymers. With reference to the theory of cooperative relaxation, a polymer is treated as an ensemble of meso-regions with arbitrary shapes and sizes. The time-dependent response of the ensemble is attributed to rearrangement of meso-domains. The rearrangement events occur at random times, when meso-regions are excited by thermal fluctuations. Stress–strain relations are derived by using the laws of thermodynamics. The governing equations are determined by four adjustable parameters that are found by fitting the experimental data. Fair agreement is demonstrated between the observations and the results of numerical simulation. The study focuses on the effects of the concentration of impurities and glass fibers on material parameters.  相似文献   
16.
A mixed‐polymeric electrokinetic chromatography system has been developed for the simultaneous determination of a contaminant like oversulfated condroitin sulfate (OSCS) and impurities expressed as dermatan (Der) in heparin (Hep) samples. The EKC system consisted of 0.5% w/v polymeric β‐CD, 0.4% w/v tetronic® 1107 and 400 mM tris‐phosphate buffer at pH 3.5. The optimized electrophoretic conditions included the use of an uncoated‐silica capillary of 50 cm of total length and 75 μm id, an applied voltage of ?7 kV, a temperature of 30°C and 200 nm UV‐detection. The highly sensitive method developed showed low values of LOD, 0.07% w/w (0.07 μg/mL) (OSCS) and 0.1% w/w (0.1 μg/mL) (Der), and values of LOQ 0.2% w/w (0.2 μg/mL) (OSCS) and 0.3% w/w (0.3 μg/mL) (Der) with a concentration level of Hep sample as low as 0.1 mg/mL. Additional parameters of validation such as specificity, linearity, accuracy, and robustness were evaluated according to international guidelines. Owing to its simplicity, high sensitivity, and reliability, the proposed method can be an advantageous alternative to the traditional methodologies for the analysis of Hep in raw material and specially in finished products because of the low amounts of Hep sample required.  相似文献   
17.
Phosphorus- and boron-doped hydrogenated amorphous silicon thin films were prepared by the plasma-enhanced chemical vapor deposition method. As-deposited samples were thermally annealed at various temperatures to get nanocrystalline Si with sizes around 10 nm. X-ray photoelectron spectroscopy measurements demonstrated the presence of boron and phosphorus in the doped films. It is found that the nanocrystallization occurs at around 600 °C for the B-doped films, while it is around 700-800 °C for the P-doped samples. For the P-doped samples, the dark conductivity decreases at first and then increases with the annealing temperature. While for the B-doped samples, the dark conductivity monotonously increases with increasing annealing temperature. As a result, the carrier transport properties of both P- and B-doped nanocrystalline Si films are dominated by the gradual activation of dopants in the films. The conductivity reaches 22.4 and 193 S cm−1 for P- and B-doped sample after 1000 °C annealing.  相似文献   
18.
高纯氧化钆中14种稀土杂质元素的柱色谱分离ICP-AES法测定   总被引:1,自引:0,他引:1  
用P507萃淋树脂柱色谱法分离高纯氧化钆基体与稀土杂质。用ICP-AES法测定高纯氧化钆中微量稀土杂质。选择了柱色谱分离的合适条件。优化了仪器测定参数。使本方法测定稀土总量下限小于1×10-5%。可以满足99.9999%高纯氧化钆的测定。此方法回收率在85%-110%之间。相对标准偏差小于18%。  相似文献   
19.
The influence of malic acid, which acts as an impurity on the cooling crystallization of zinc lactate is investigated in this paper by monitoring the relative supersaturation and the number of crystals during crystallization. The presence of malic acid increases the solution solubility and makes the metastable zone wider; it also changes the habit of the crystal. The purity of the final products is shown to be influenced by the amount and size of seed crystals, cooling rate, seeding temperature and final temperature, but appears to depend mainly on the particle size and level of supersaturation. Residual supersaturation thresholds are observed that depend on the final temperature. A model is proposed to predict the steady-state supersaturation value from the final temperature at a given impurity concentration. This model is based on Kubota and Gibbs equations.  相似文献   
20.
Tenatoprazole (Ulsacare®) is a recently developed antiulcerative drug used for the treatment of both erosive and nonerosive gastroesophageal reflux disease. During the bulk synthesis of tenatoprazole, we have observed four impurities (tenatoprazole N‐oxide, tenatoprazole sulfone N‐oxide, N‐methyl tenatoprazole, and desmethoxy tenatoprazole) and two metabolites (tenatoprazole sulfide and tenatoprazole sulfone). The present work describes the synthesis and characterization of these impurities.  相似文献   
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