Kapitza phonon transmission from clean H-silicon(111) surfaces into liquid helium

We have studied the phonon transmission from ultraclean Si(111) surfaces into liquid helium by the phonon pulse technique. Reflection experiments and angular resolving transmission experiments were performed to measure the absolute value of the transmission coefficient and its dependence on the phonon emission angle into the solid. Clean samples etched conventionally in dilute HF show a significant anomalous transmission. An additional etch step in highly buffered HF (i.e., NH₄F) with a pH-value of 7.8 reduces the transmission coefficient drastically. Local inhomogeneities of the transmission coefficient caused by the deposition of water molecules on the surface could be visualized by the enhanced transmission. We found that the observed anomalous transmission is caused by mass defects.     

气密性碳涂覆光纤筛选强度与电阻关系研究

通过实验分析确立了把光纤电阻作为衡量气密性碳涂覆光纤通过２％应变筛选的过渡标准。要拉制２％应变筛选的碳涂覆光纤，其电阻值应小于３０ｋΩ／ｃｍ。     

微观结构对膜换湿能力影响研究

对多孔膜换湿过程进行了理论分析,得到了透湿量和湿阻的计算式.同时对三种膜包括PVDF,PES和纤维素膜进行了湿阻的测量实验,通过对实验数据的回归处理,得到了多孔膜的结构参数.结果表明,膜厚、孔径分布、孔隙率及曲折因子对膜的换湿特性都有较大影响,在平均孔径相同的情况下,其它因素仍然导致了不同膜换湿能力的较大差距。在所获得的结构参数基础上,通过数值模拟的方法研究了平均孔径对膜换湿能力的影响。结果表明湿阻随平均孔径的增大而减小,减小趋势逐渐平缓最后趋向一定值。     

Effects of the Synergy of Hardness and Resilience on the Akron Abrasion Properties of SBR Vulcanizates

The hardness (H) and resilience (R) of rubber vulcanizates were combined together in this paper, named as hardness–resilience product (H⁴R), and its relationship with the Akron abrasion loss was investigated using various styrene-butadiene rubber (SBR) vulcanizates possessing specific hardness and resilience characteristics as samples. For the unfilled SBR vulcanizates with different chain microstructure, possessing high elastic resilience and low hardness, the results showed that their Akron abrasion loss had a good linear relationship with the log(H⁴100R). This linear relationship also occurred when these SBRs were filled with 50 phr carbon black. For two particular types of SBR, after being filled with different fractions of carbon black and aged for different times, all their Akron abrasion losses (including unaged, aged for 24 h, and aged for 48 h) also had a good linear relationship with the log(H⁴100R). However, this linear relationship weakened for one of the SBRs after being aged for 48 h. In the high H⁴R region (the carbon black fractions being 60 and 70 phr), the data obviously deviated from the fitting curve due to the high hardness of the aged vulcanizates. However, after being filled with 50 phr of various kinds of carbon blacks, the relationships between abrasion loss and log(H⁴100R) were also approximately linear, with the correlation coefficient of the fitting curves being 0.99966 and 0.99878, respectively, for the two types of SBR.     

Reflection of keV heavy-ion beams from solid targets. Dependence on energy and angle of incidence

Recent experimental and theoretical studies of the reflection of keV heavy-ion beams have been extended to higher energies and to non-perpendicular incidence. The reflection coefficient for Na⁺ and K⁺ ions backscattered from polycrystalline gold and silver targets has been obtained for perpendicular incidence at energies of 100–500 keV. The dependence on angle of incidence has been investigated at 30 keV for the same combinations of targets and projectiles. Effects of electronic stopping have been included in the theoretical calculations. Good agreement between the experimental results and the theoretical calculations is found.     

Defect structure and optical damage resistance of Hf:Fe:LiNbO3 crystals

A series of Hf:Fe:LiNbO₃ crystals were grown by the Czochralski technique with various doping concentrations of HfO₂. Their defect structures were analyzed by the UV-visible absorption spectra and infrared absorption spectra. The optical damage resistance of Hf:Fe:LiNbO₃ crystals was measured by the photo-induced birefringence change and the transmitted light spot distortion method. The results show that the optical damage resistance ability of Hf:Fe:LiNbO₃ crystals enhances remarkably with the HfO₂ concentration increasing when the HfO₂ concentration is lower than its threshold concentration (4 mol%). However, when the HfO₂ concentration exceeds its threshold concentration, the optical damage resistance ability of the crystals returns to decrease. This unusual behavior is explained by using the photovoltaic field produced in the crystals.     

SETMOS实现多涡卷蔡氏电路的研究

基于细胞神经网络结构,利用具有负微分电阻特性的单电子晶体管与金属氧化物半导体混合结构器件SETMOS实现了多涡卷蔡氏电路.对该电路系统的基本动力学特性(如相图、分岔图、Lyapunov指数、Poincaré映射和功率谱)进行了理论分析和数值仿真,并利用电路仿真实验验证了该三阶四涡卷蔡氏电路设计的正确性和可行性.研究结果表明,SETMOS的负微分电阻特性决定着多涡卷蔡氏电路的复杂动力学行为,而且所设计的电路结构简单易行.     

Rectifying resistance switching behaviors of SnO2 microsphere films modulated by top electrodes

Based on the bipolar resistive switching (RS) characteristics of SnO₂ films, we have fabricated a new prototypical device with sandwiched structure of Metal/SnO₂/fluorine-doped tin oxide (FTO). The SnO₂ microspheres film was grown on FTO glass by template-free hydrothermal synthesis, which was evaporated with various commonly used electrodes such as aluminium (Al), silver (Ag), and gold (Au), respectively. Typical self-rectifying resistance switching behaviors were observed for the RS devices with Al and Au electrodes. However, no obvious rectifying resistance switching behavior was observed for the RS device with Ag electrode. Above results were interpreted by considering the different interface barriers between SnO₂ and top metal electrodes. Our current studies pave the ways for modulating the self-rectifying resistance switching properties of resistive memory devices by choosing suitable metal electrodes.     

基于拉曼热测量技术的铜基复合物法兰GaN基晶体管的热阻分析

采用拉曼热测量技术结合有限元热仿真模型,分析比较新型铜/石墨复合物法兰封装与传统铜钼法兰封装的GaN器件的结温与热阻,发现前者的整体热阻比铜钼法兰器件的整体热阻低18.7%,器件内部各层材料的温度分布显示铜/石墨复合物法兰在器件中的热阻占比相比铜钼法兰在器件中的热阻占比低13%,这证明使用高热导率铜/石墨复合物法兰封装提高GaN器件热扩散性能的有效性.通过对两种GaN器件热阻占比的测量与分析,发现除了封装法兰以外,热阻占比最高的是GaN外延与衬底材料之间的界面热阻,降低界面热阻是进一步提高器件热性能的关键.同时,详细阐述了使用拉曼光热技术测量GaN器件结温和热阻的原理和过程,展示了拉曼光热技术作为一种GaN器件热特性表征方法的有效性.     

Structure-property and composition-property relationships for poly(ethylene terephthalate) surfaces modified by helium plasma-based ion implantation

The surfaces of untreated and helium plasma-based ion implantation (He PBII) treated poly(ethylene terephthalate) (PET) samples were characterised by reflectance colorimetry, contact angle studies and measurements of surface electrical resistance. The results were related to the structural and compositional data obtained by the authors earlier on parallel samples by XPS and Raman spectroscopy. Inverse correlations between lightness and I_D/I_G ratio and between chroma and I_D/I_G ratio were obtained, suggesting that the PBII-treated PET samples darken and their colourfulness decreases with the increase of the portion of aromatic sp² carbon rings in the chemical structure of the modified layer. Direct correlation between water contact angle and the I_D/I_G ratio and inverse correlations between surface energy and I_D/I_G ratio and between dispersive component of surface energy and I_D/I_G ratio were found, reflecting that surface wettability, surface energy and its dispersive component decrease with the formation of surface structure, characterised again by enhanced portion of aromatic sp² carbon rings. The surface electrical resistance decreased with the increase of the surface C-content determined by XPS and also with the increase of the surface concentration of conjugated double bonds, reflected by the increase of the π → π* shake-up satellite of the C 1s peak.