Experimental determination of the electron elastic backscattering probability and the surface excitation parameter for Si,Ni, Cu and Ag at 0.5 and 1 keV energies

Electron spectra are generally presented in arbitrary units. The experimental elastic peak intensity I_espec(E) is determined by the elastic backscattering probability I_e(E) of electrons backscattered elastically within the solid angle of the spectrometer. The experimental elastic peak I_espec(E) is converted to I_e(E) backscattering probability using our new procedure based on the Goto i_e(E) elastic backscattering current database. The elastic backscattering probability I_c(E) was calculated applying the EPESWIN software of Jablonski. I_e(E) < I_c(E) due to the surface losses of electrons, characterized by the surface excitation parameter P_se (SEP). P_se(E) was determined experimentally using the Goto database and the relationship of Tanuma. Our new procedure is applied to angular‐resolved (AREPES) spectra of Jablonski and Zemek presented in arbitrary units. In their AREPES experiments, the experimental elastic peak intensity I_espec = I_e(E, α_d, ΔΩ) was measured at α_d angle of detection (35–74°) with a small HSA, with ΔΩ solid angle. The experimental value at 42° $I_{e}(E, {\it{42}}\deg{\hbox{}}, {\Delta}\Omega)$ was converted to probability with the Goto database. It was corrected with a SEP parameter P_se, determined by trial and error method for Si, Ni, Cu and Ag for E = 0.5 and 1 keV primary energies. Copyright © 2010 John Wiley & Sons, Ltd.     

Growth of Ni-Al alloys on Ni(1 1 1): (I) Formation of epitaxial Ni3Al from ultra-thin Al deposits

In this paper we describe the alloying process of ultra-thin Al layers (below 8 × 10¹⁵ Al/cm²) deposited on Ni(1 1 1). For this purpose Auger electron spectroscopy, low energy electron diffraction, and ion beam analysis-channelling measurements have been performed in situ in an ultra-high vacuum chamber. Al deposits formed at low temperature (about 130 K) are strained defective crystalline layers retaining the substrate orientation. Alloying takes place, with very progressive Ni enrichment, in a very broad temperature range between 250 K and 570 K. This feature shows that diffusion of the alloy species is more and more difficult when the Ni concentration increases. At 570 K a crystallographically and chemically ordered Ni₃Al phase is formed, and its order continuously improves upon annealing, up to 750 K. We have shown by ion beam methods that this alloy is three-dimensional, extending up to 16 (1 1 1) planes for the thickest deposits. The Ni₃Al phase can also be obtained directly by Al deposition at 750 K, but its crystalline quality is lower and the layer is probably formed of grains elongated along 〈1 1 −2〉 directions. The Al content of the thin Ni₃Al layers formed mostly dissolves in the bulk above 800 K. However a small amount of Al remains segregated at the Ni crystal surface.     

Microstructure,Interfacial Interactions,and Rheological Properties of PC/AES/Montmorillonite Composites

Polycarbonate (PC) and acrylonitrile–EPDM (ethylene/propylene/diene elastomer)–styrene ter‐polymer (AES) blends and PC/AES/organically modified montmorillonite (OMMT) composites were prepared at 20%, 40%, 50% by weight of AES and 3% by weight of OMMT. The microstructure, interfacial interactions, and rheological properties of the PC/AES blends and PC/AES/OMMT composites were studied systematically. X‐ray diffractometer (XRD) results reveal that the AES is easier to intercalate into OMMT than PC, and the content of AES has a little effect on the interlayer distance of OMMT. Wetting coefficient calculation indicates that OMMT distributes primarily at the interface of the polymer blend. Field emission scanning electron microscope (FE‐SEM) observation indicates that the phase morphology of PC/AES blends and PC/AES/OMMT composites is not influenced by the OMMT. However, linear rheological properties suggest that the addition of OMMT has a great effect on the linear rheological property.     

PSO萃取色层分离原子发射光谱测定氧化钇中十四个稀土杂质

本将石油亚砜浸渍在一种特制的吸附树脂上,用ＰＳＯ为固定相的萃取色层法分离氧化钇中痕量稀土杂质,可以分析６－７Ｎ级的氧化钇样品,加入试验的回收率为６７－１２０％,相对标准偏左为±４－１９．４％。     

Chemical bond formation during laser bonding of Teflon FEP and titanium

Teflon^® FEP (fluorinated ethylene propylene) is resistant to most chemical solvents, is heat sealable and has low moisture uptake, which make this polymer attractive as a packaging materials for electronics and implantable devices. Teflon^® FEP/Ti microjoints were fabricated by using focused infrared laser irradiation. Teflon^® FEP/Ti interfaces were studied by using X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and scanning electron microscopy coupled with energy dispersive spectroscopy (SEM-EDS). The XPS results give evidence for the formation of Ti-F bonds in the interfacial region. The AES and SEM-EDS results show that the chemical bond formation occurs only in the actual bond area. No evidence for chemical bond formation was found in the heat affected zone surrounding the laser bonds.     

Defect structure and optical damage resistance of In:Fe:Cu:LiNbO3 crystals with various [Li]/[Nb] ratios

In:Fe:Cu:LiNbO₃ crystals were grown in air by the Czochralski technique with various [Li]/[Nb] ratios of 0.946, 1.050, 1.200, and 1.380 in melt. Based on the ICP‐AES (inductively coupled plasma atomic emission spectrometry) analyzed results, the chemical formula of the triple‐doped In:Fe:Cu:LiNbO₃ crystals were obtained. It can be seen that the near‐stoichiometric ratio value is between 1.050 and 1.200 for our samples. The optical damage resistance of In:Fe:Cu:LiNbO₃ crystals was characterized by changes in light‐induced birefringence and it increases with the increasing of [Li]/[Nb] ratios. The dependence of the optical damage resistance on the defect structure of In:Fe:Cu:LiNbO₃ crystals is discussed in detail based on the obtained chemical formulas. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Application of surface analysis methods to nanomaterials: summary of ISO/TC 201 technical report: ISO 14187:2011 – surface chemical analysis – characterization of nanomaterials

The ISO technical report 14187 provides an introduction to (and examples of) the information that can be obtained about nanostructured materials by using surface analysis tools. In addition, both general issues and challenges associated with characterizing nanostructured materials and the specific opportunities and challenges associated with individual analytical methods are identified. As the size of objects or components of materials approaches a few nanometers, the distinctions among ‘bulk’, ‘surface’, and ‘particle’ analysis blur. This technical report focuses on issues specifically relevant to surface chemical analysis of nanostructured materials. The report considers a variety of analysis methods but focuses on techniques that are in the domain of ISO/TC 201 including Auger electron spectroscopy, X‐ray photoelectron spectroscopy, secondary ion mass spectrometry, and scanning probe microscopy. Measurements of nanoparticle surface properties such as surface potential that are often made in a solution are not discussed. Copyright © 2012 John Wiley & Sons, Ltd.     

ICP-AES法测定6种海产品中的营养元素及营养功能的探讨

本文用ICP－AES法测定了6种海产品中的6种营养元素,讨论了与实验有关的相关因素。该方法回收率为96％－103％,相对标准偏差＜4％,结果令人满意。     

Effects of Pt diffusion barrier layer on the interface reaction and electric properties of PZT film/Si (111) sample

The effects of the Pt diffusion barrier layer on the interface diffusion and reaction, crystallization, dielectric and ferroelectric properties of the PZT/Si(111) sample have been studied using XPS, AES and XRD techniques. Hie results indicate that the Pt diffusion barrier layer between the PZT layer and the Si substrate prohibits the formation of TiCx TiSix and SiO2 species in the PZT layer. The Pt barrier layer also completely interrupts the diffusion of Si from the Si substrate into the PZT layer and impedes the diffusion of oxygen from air to the Si substrate greatly. Although the Pt layer can not prevent completely the diffusion and reaction between oxygen and silicon, it can prevent the formation of a stable SiO2 interface layer on the interface of PZT/Si. The Pt layer reacts with silicon to form PtSix species on the interface of Pt/Si, which can intensify the chemical binding strength between the Pt layer and the Si substrate. To play a good role as a diffusion barrier layer, the Pt barrier layer