The effects of O deficiency on the electronic structure of rutile TiO2

Ab initio density functional calculations (plane wave GGA, CASTEP) were performed to determine the effect of O deficiency on the electronic structure of rutile, TiO₂. O deficiency was introduced through either the removal of O or the insertion of interstitial Ti atoms. At physically realistic concentrations of O vacancies in the rutile lattice (i.e. 25% and less) O deficiency results in the population of the bottom of the conduction band, the location of the Ti 3d orbitals in the pure structure, increasingly with increasing vacancy concentration. We propose that this could be confused with the formation and population of gap states especially where O vacancies occur in isolated positions in the lattice. In contrast, Ti interstitials introduce a defect state into the energy gap, without an overall reduction in the size of the energy gap. O vacancies result in a spin polarized solution, whereas Ti interstitials do not.     

Photoemission study of the modification of the electronic structure of transition-metal overlayers on TiO2 surfaces II. Cr on TiO2(0 0 1)

The electronic states of the Cr overlayers on TiO₂(0 0 1) surfaces have been investigated using angle-resolved and resonant photoemission spectroscopy with synchrotron radiation. At lower coverages, Cr deposition on TiO₂(0 0 1) creates two well separated in-gap emissions due to the formation of surface Ti³⁺ (3d¹) ions and Cr³⁺ (3d³) ions. At higher coverages, the in-gap emission is developed into the 2-peak-structure emission of Cr 3d character. The corresponding state is considered to be of metallic nature from the viewpoint of the high ability of oxygen adsorption, but has no Fermi edge, indicating a possibility of forming small Cr clusters on TiO₂(0 0 1) at this stage.     

Crystallographic report: Bis(norfloxacin)dilead(II) tetranitrate, [Pb2(H‐Norf)2(ONO2)4]

The centrosymmetric binuclear structure of [Pb₂(H‐Norf)₂(ONO₂)₄]shows the geometry around each lead(II) atom to be distorted trigonal bipyramidal with Pb–O distances ranging from 2.357(3) to 2.769(4) Å. Copyright © 2003 John Wiley & Sons, Ltd.     

Photo-induced evolution of copper sheets from cluster molecules and its application to photolithographic copper patterning

UV photoexcitation of (t-butylethynyl copper)₂₄ cluster films induces segregation of the crystals into metallic and organic phases and leads to evolve the metallic sheets sandwiched by organic polymers. The growth of the metallic crystals in the plane of the photo-electromagnetic field is attributed due to plasmon-plasmon interaction among nanoparticles embedded in dielectric polymer matrices. The surface enhanced photochemical reaction of residual cluster molecules on the photon incident direction is expected to take an important role for joining the metal particles to produce a metallic sheet. We can apply this phenomenon for photolithographic copper pattern generation on a flexible base plate.     

First-principles study of indium on silicon (1 0 0)—the structure, defects and interdiffusion

The atomic structures of indium (In) on silicon (Si) (1 0 0)-(2 × 1) surface are investigated by the local density approximation using first-principles pseudopotentials. Total energy optimizations show that the energetically favored structure is the parallel ad-dimer model. The adsorption energy of In on ideal Si(1 0 0)-(1 × 1) surface is significantly higher than that on reconstructed Si(1 0 0)-(2 × 1) surface, suggesting that In adsorption does not break the Si-Si dimer bond of the substrate. When Si surface contains single dimer vacancy defects, In chain will be interrupted, leading to disconnected In nanowires. Displacive adsorption of In on Si(1 0 0) is also considered, and the calculation suggests that interdiffusion of In into Si substrate will not be favorable under equilibrium conditions.     

基片温度对坡莫合金薄膜结构和磁电阻的影响

用磁控溅射方法制备了系列坡莫合金Ni80Fe20薄膜。利用X射线衍射、扫描电子显微镜和原子力显徽镜分析了薄膜的结构、晶粒取向、薄膜厚度、截面结构和表面形态。用4点探测技术测量了薄膜的电阻和磁电阻。结果表明：随衬底温度的升高，晶粒明显长大。膜内的缺陷和应力显著减小，而且增强了薄膜晶粒的[111]择优取向。结果表明，薄膜电阻率显著减小，而磁电阻显著增大。     

用玻色子组态混合和玻色子表面δ相互作用研究核谱

用玻色子组态混合波函数和玻色子表面δ相互作用研究了三玻色子核⁴⁶Ti和⁵⁴Cr的sdgIBMI的能谱和E2跃迁概率,理论计算结果令人满意,比sdIBMI能拟合出更多的能级和E2跃迁概率,而且它们的误差更小. 说明g玻色子在振动区也起着重要的作用,同时进一步证明了这种玻色子组态混合模型是成功的.     

(Mn1−xPbx)Pb10+ySb12−yS26−yCl4+yO, a new oxy-chloro-sulfide with ∼2 nm-spaced (Mn,Pb)Cl4 single chains within a waffle-type crystal structure

The new oxy-chloro-sulfide (Mn_1−xPb_x)Pb_10+ySb_12−yS_26−yCl_4+yO (x ∈ [0.2-0.3]; y ∈ [0.3-1.6]) was synthesized by dry way at 500-600 °C. A single crystal ∼Mn_0.7Pb_11.0Sb_11.3S_25.3Cl_4.7O indicates a monoclinic symmetry, space group C2/m, with a = 37.480(8), b = 4.1178(8), c = 18.167(4) Å, β = 106.37(3)°, V = 2690.2(9) Å³, Z = 2. Its crystal structure was determined by X-ray single crystal diffraction, with a final R = 5.11%. Modular analysis of the crystal structure reveals a “waffle” architecture, where complex rods with lozenge section delimitate an internal channel filled by a single chain of (Mn_0.7Pb_0.3)Cl₆ octahedra connected by opposite edges. Minimal inter-chain distances are close to 18 Å. The rod wall, two-atom thick, presents, in alternation with S atoms, Pb or (Pb,Sb) cations with prismatic coordination in the internal atom layer, while the external atom layer is constituted exclusively by Sb cations with dissymmetric square pyramidal coordination. A (Pb,Sb)₂S₂ fragment connects two successive rods along (2 0 1) to form a waffle-type palissadic layer. The unique O position, half filled, presents the same environment than the isolated O positions in the oxy-sulfide Pb₁₄Sb₃₀S₅₄O₅, or oxy-chloro-sulfides Pb₁₈Sb₂₀S₄₆Cl₂O and (Cu,Ag)₂Pb₂₁Sb₂₃S₅₅ClO. This compound belongs to a pseudo-homologous series of chalcogenides with waffle structure, ordered according to the size of their lozenge shape channel. Such a complex senary compound of the oxy-chloro-sulfide type illustrates the structural competition between three cations, on one hand, and, on the other hand, three anions. This compound is of special interest regarding the 1D distribution of magnetic Mn²⁺ atoms at the ∼2 nm scale.     

平面旋转场诱导下磁流变液的结构模型

针对平面旋转场下磁流变液中诱导产生的层状结构 ,提出了恰当的理论模型 ,该模型成功的解释了层状结构在同步旋转状态下 :层间距随磁场的变化关系 ;旋转层的滞后角随旋转角频率以及其他物理量之间的关系 ;层半径与旋转角频率之间的关系 .理论结果与文献中发表的实验结果相吻合     

光纤机敏结构制作方法的研究

本文讨论机敏结构的制作方法、集成光纤传感器存在的问题、现有解决方法和今后的研究方向。