超导氧化物La1.85Sr0.15CuO4/超高分子量聚乙烯复合材料的输运性质

采用热压法获得了具有不同混合比例的超导氧化物La1.85Sr0.15CuO4/超高分子量聚乙烯导电复合材料,并利用x射线衍射、扫描电子显微镜和标准四引线方法对复合材料的结构和低温电输运性质进行测量.实验结果显示,超导氧化物La1.85Sr0.15CuO4颗粒随机分布在聚合物本体中,相互间没有连接构成网络结构.在正常态下,复合材料的电阻-温度变化曲线给出类半导体行为.但对应于超导氧化物La1.85Sr0.15CuO4的超导转变温度Tc处,复合材料的电阻-温度变化曲线出现了极小值.室温下电阻率ρ随外加电场强度E的变化曲线测量结果表明,ρ-E曲线为一线形关系,随着电场强度E增加,电阻率ρ下降.文中对可能存在的导电机制进行分析,结果表明隧道贯穿模型可以很好地解释复合材料的导电机制.另外,外加电场强度E对复合材料的电输运特性有明显的影响.     

双阱结构含时量子输运的微扰论及输运方程

利用Lewis-Riesenfeld不变量理论和与不变量有关的幺正变换方法研究了双阱结构含时量子 输运的微扰论.获得了双阱内含时薛定谔方程的精确解的完备集，在此基础上，把双阱与左 右热库的相互作用作为微挠，获得了双阱结构一阶近似下的输运方程，并在绝热近似下提供 了一种用于研究量子输运过程中几何相因子(Berry相因子)的方法. 关键词： 含时量子输运 输运方程 不变量 几何相因子     

Carrier diffusion in InGaAs/GaAs quantum wells grown on vicinal GaAs(0 0 1) substrates

We have investigated the influence of vicinal GaAs substrates on the optical and electronic properties of InGaAs/GaAs quantum wells (QWs). A single In_0.10Ga_0.90As QW was grown by molecular-beam epitaxy on a vicinal GaAs(0 0 1) substrate with a miscut angle of 0° (nominal), 2°, 4° and 6° towards [1 1 0]. The carrier diffusion was obtained by a micro-photoluminescence scan technique that permits to observe the effective diffusion length characterized by the lateral spread of carriers in the QW followed by radiative recombination. The carrier diffusion length was obtained parallel (L_||) and perpendicular (L) to the atomic steps. The diffusion length decreases as the temperature increases up to 100 K. Above this temperature we found different behaviours that depend on the sample miscut angle.     

Investigation of the effect of CdCl2 processing on vacuum deposited CdS/CdTe thin film solar cells by DLTS

Thin film CdS/CdTe solar cells have been prepared by conventional vacuum deposition technique. Deep level transient spectroscopy (DLTS), temperature and frequency dependent capacitance-voltage (C-V) measurements were utilised to investigate the performance limiting defect states in the CdTe layer subjected to the post deposition treatments such as CdCl₂-dipping and/or annealing in air. Five hole traps, all of which have been previously reported in the literature, were identified in as-grown CdTe at 0.19, 0.20, 0.22, 0.30 and 0.40 eV above the valence band. A single hole trap level has been evidenced at 0.45 eV after both post deposition heat and CdCl₂ treatments.     

Computational Electrochemistry: A Model to Studying Ohmic Distortion of Voltammetry in Multiple Working Electrode,Microfluidic Devices,an Adaptive FEM Approach

Characteristics of mass transport and potential distribution applicable to microfluidic electrochemical flow cell devices has been modelled using the finite element method. A flexible, automatic grid generation algorithm has been combined with an a‐posteriori error indication technique presented by Nann and Heinze to allow irregular cell geometries to be modelled. The code has been applied to the problem of steady state generator – detector linear sweep voltammetry in a channel flow cell showing the effects of IR drop on the voltammetric response of each electrode.     

Experimental analysis of current and deformation of ion-exchange polymer metal composite actuators

In this paper we describe the experimental analysis of a novel ion-exchange polymer metal composite (IPMC) actuator under large external voltage. The experimental analysis is supplemented with a coupled thermodynamic model, which includes mass transport across the thickness of the polymer actuator, chemical reactions at boundaries, and deformation as a function of the solvent (water) distribution. In this paper, the case of large electrode potentials (over 1.2 V) has been analyzed experimentally and theoretically. At these voltage levels, electrochemical reactions take place at both electrodes. These are used in the framework of overpotential theory to develop boundary conditions for the water transport in the bulk of polymer. The model is then simplified to a three-component system comprised of a fixed negatively charged polymeric matrix, protons, and free water molecules within the polymer matrix. Among these species, water molecules are considered to be the dominant species responsible for the deformation of the IPMC actuators. Experiments conducted at different initial water contents are described and discussed in the context of the proposed deformation mechanism. Comparison of numerical simulations with experimental data shows good agreement.     

等离子体中的迁移系数

从等离子体动力学方程出发,采用玻尔兹曼碰撞项,在粒子分布函数偏离麦克斯韦分布甚小的情况下,作三级矩近似得到了等离子体迁移方程组。迁移方程组中忽略时间微分项后,得出了电子-离子等离子体的张量形式迁移系数,以及与磁场方向成平行(∥)、垂直(⊥)和交叉方向的迁移系数。导出的结果和文献[1]采用朗道碰撞项得出的结果进行了比较。结果表明,迁移系数和等离子体参数的依赖关系是一致的,但对磁场B和离子电荷Z_i值取定时,个别迁移系数要差一倍。此外,导出的迁移系数形式比文献[1]的要简单些。     

一般非均匀凸介质迁移算子本征值的分布

本文讨论一般非均匀凸介质所确定的迁移算子的本征值的分布问题，利用Ｈｉｌｂｅｒｔ空间的Ｈ算子理论，完整地解决了一般非均匀凸介质中迁移算子本征值的分布问题，若｛λｎ｝ｎ＝１＾∞是迁移算子本征值的一种计数，我们证明了Σ↓ｎ＝１↑∞ｅ＾６Ｒｅλｎτ〈＋∞，其中τ是粒子的最大逃逸时间，并对本征值的发散程度以及本征值的个数函数作了相应的讨论。     

Study on a Cross Diffusion Parabolic System

This paper considers a kind of strongly coupled cross diffusion parabolic system,which can be usedas the multi-dimensional Lyumkis energy transport model in semiconductor science.The global existence andlarge time behavior are obtained for smooth solution to the initial boundary value problem.When the initialdata are a small perturbation of an isothermal stationary solution,the smooth solution of the problem under theinsulating boundary condition,converges to that stationary solution exponentially fast as time goes to infinity.     

MEASUREMENTS OF Fe AND Cu K-Shell IONIZATION CROSS SECTIONS BY SLOW ELECTRON IMPACT

ＭＥＡＳＵＲＥＭＥＮＴＳＯＦＦｅＡＮＤＣｕＫ－ＳｈｅｌＩＯＮＩＺＡＴＩＯＮＣＲＯＳＳＳＥＣＴＩＯＮＳＢＹＳＬＯＷＥＬＥＣＴＲＯＮＩＭＰＡＣＴＬｉＴａｉｈｕａＡｎＺｈｕＬｕｏＺｈｅｎｇｍｉｎｇＣｅｎｔｅｒｆｏｒＲａｄｉａｔｉｏｎＰｈｙｓｉｃｓ，Ｉｎｓ...