双阳极磁控注入枪束流特性的研究

 介绍了用于34GHz基波回旋速调管的双阳极磁控注入枪的结构特点，为了准确分析磁控注入枪的束流特性，建立了阴极表面理论模型，用新编制的程序模拟了电子轨迹。模拟和测量结果显示磁场对磁控注入枪的束流有影响，磁控注入枪的束流也与阴极温度和空间电荷效应有关系。     

1THz回旋管双阳极磁控注入电子枪的分析及设计

基于电子光学理论,通过编程进行大量的数值计算,设计了一支用于1THz回旋管的双阳极磁控注入式电子枪.对双阳极磁控注入电子枪的计算及设计进行了阐述,并对1 THz回旋管电子枪中高磁压缩比(f_m=125)可能导致电子反转的问题进行了详细的分析和模拟.通过对电子枪进行了仿真和优化,最后计算和设计了一支速度比适中(α=1.3),速度零散较小(Δβ<8%) 的电子枪.     

鲁米诺-铁氰化钾化学发光体系快速分析生物样品中莱克多巴胺

该文建立了新的流动注射-化学发光快速测定莱克多巴胺的分析方法。基于碱性介质中莱克多巴胺对鲁米诺-铁氰化钾体系化学发光的增敏作用,研究了各因素对化学发光的影响。结果表明,在最佳发光条件下,相对发光强度与莱克多巴胺浓度在4.0×10-9～8.0×10-7 g.mL-1范围内呈良好的线性关系,检出限为2.5×10-9 g.mL-1,相对标准偏差为5.6%。应用该方法成功分析了猪肉和尿样中莱克多巴胺的含量,回收率为69.3%～101.3%,结果令人满意。     

Influence of injection patterns on chaos synchronization performance between a multimode laser diode and a single-mode laser

In this paper, based on a system composed of a multimode emitted laser diode and a single-mode received laser, chaos synchronization performance has been investigated numerically under different optical injection patterns. The results show that, for single mode injection (SMI) which means the received laser is injected by a selective longitudinal mode of the multimode emitted laser whose wavelength corresponds to that of the single-mode received laser, the system synchronization performance is better than that with multi mode injection (MMI); depending on the optical spectrum of the received laser, the physical mechanism of chaos synchronization deterioration for MMI is given. Additionally, after taking into account the parameter mismatches, the chaos synchronization performance of the system with different injection pattern have also been discussed. For either SMI or MMI, the synchronization performance with negative parameter mismatches is better than that with positive parameter mismatches.     

Improved device performance in nonpolar a ‐plane GaN LEDs using a Ni/Al/Ni/Au n‐type ohmic contact

The authors report upon the increased light‐output power (P_out) via a reduction in the forward voltage (V_f) for nonpolar a ‐plane GaN LEDs using Ni/Al/Ni/Au n‐type ohmic contacts. The specific contact resistivity of the Ni/Al/Ni/Au contact is found to be as low as 5.6 × 10^–5 whereas that of a typical Ti/Al/Ni/Au contact is 6.8 × 10^–4 Ω cm², after annealing at 700 °C. The X‐ray photoelectron spectroscopy results show that the upward surface band bending is less pronounced for the Ni/Al contact compared to the Ti/Al contact, leading to a decrease in the effective Schottky barrier height (SBH). The V_f of the nonpolar LEDs decreases by 10% and P_out increases by 15% when the Ni/Al/Ni/Au scheme is used instead of the typical Ti/Al/Ni/Au metal scheme. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

微波注入反相器基本电路的非线性效应

采用理论分析和微波注入实验相结合的方法,分别研究了以74HC04和74LVCU04A两种芯片为核心的反相器基本缓冲及数模转换电路的微波效应问题,通过反相器闩锁过程对非线性扰乱进行了机理分析,并利用微波注入实验详细分析了非线性扰乱效应的微波有效功率阈值及其随频率、脉冲宽度的变化。实验结果表明：在固定环境温度条件下,有效注入功率大于33 dBm,频率在3 GHz以下的微波均可使74HC04效应电路的非线性扰乱强度达到10%以上;有效注入功率大于30 dBm,频率在3 GHz以下的微波均可使74LVCU04A效应电路的非线性扰乱强度达到10%以上。相同非线性扰乱强度的注入有效功率阈值近似随频率的提高而增大。非线性扰乱阈值随注入微波信号脉宽变化明显,拐点为40~70 ns不等,与反相器中的互补型金属氧化物半导体器件寄生三级管的导通电流积累有关。     

碳酸铯修饰Al作为反射阴极的倒置顶发射OLED器件

以Cs₂CO₃修饰的Al电极作为反射阴极制备了高效倒置顶发射结构有机电致发光器件(ITOLED)。以八羟基喹啉铝(Alq₃)作为发光层、MoO₃修饰的Ag为半透明阳极时,器件的开启电压为3.6 V,发光效率和功率效率分别达到9.8 cd/A和3.4 lm/W。研究结果表明,Al/Cs₂CO₃为反射阴极的器件性能明显高于使用Mg:Ag(4.2 V,8.6 cd/A,2.85 lm/W)和Al(5 V,5.5 cd/A,1.57 lm/W)作为反射阴极的倒置顶发射OLED器件。单电子器件研究结果证明,以Cs₂CO₃修饰的Al电极功函数明显低于Mg:Ag和Al电极,具有更好的电子注入效果。因此,除去微腔效应外,Al/Cs₂CO₃为反射电极的ITOLED器件性能的提高主要归因于Al/Cs₂CO₃阴极的有效电子注入。     

铁磁/有机半导体/铁磁系统的电流自旋极化性质研究

根据有机半导体中的电流自旋极化注入和输运实验现象，理论上研究了铁磁/有机半导体/铁磁系统的电流自旋极化性质.考虑到有机半导体的具体特性，从自旋扩散理论和欧姆定律出发，得到了系统的电流自旋极化率.假设自旋极化子和不带自旋的双极化子为有机半导体中的载流子.通过计算发现，极化子为实现有机半导体中电流极化注入和输运的有效自旋载流子，即使它只占总载流子很少一部分.还进一步研究了自旋相关界面电阻和电导率匹配以及有机半导体长度等因素对系统电流自旋极化的影响. 关键词： 自旋电子学 自旋注入 有机半导体 极化子     

Electroluminescence efficiency in bilayer organic light-emitting devices with LiF/Al cathode

An analytical model to calculate electroluminescence (EL) efficiency of bilayer organic light-emitting devices, considering the influence of introducing LiF insulating buffer layer at metal/organic interface on the barrier height for electron injection, was presented. The relations of EL efficiency versus the applied voltage and injection barrier or internal interfacial barrier or the thickness of organic layer were discussed. The results indicate that: (1) when δ e/δ h < 2, metal/organic (M/O) interface is ohmic contact; when δ e/δ h > 2, M/O becomes contact limited; and when δ e/δ h = 2 (Φ h ～ 0.2 eV, Φ e ～ 0.3 eV), there is a transition from ohmic contact to contact limited; (2) η EL decreases with the increase of δ′e / δ′h; however, when δ′e / δ′h > 2.5 (H ′h～ 0.2 eV, H ′e～ 0.4 eV), the changes of η EL are very small, which shows that η EL is dominated by the carrier’s injection; (3) when increasing Lh/L, η R has a descending trend at low voltage and a rising one at higher voltage. For a given Lh/L, η EL first increases and then decreases with the increasing applied voltage, and as Lh/L further increases, the variation tendency of η EL is more obvious. These conclusions are in agreement with the reported theoretic and experimental results.