Preparation and Photovoltaic Properties of p-Type Nano-ZnFe2O4

p-Type nano-ZnFe₂O₄ semiconductors were gained by high-prssure treatment. Surface photovoltaic spectrum(SPS) and transient photovoltaic technology(TPV) were used for studying the photogenerated charge of nano-ZnFe₂O₄. Results show that the photovoltaic behavior of nano-ZnFe₂O₄ changed as the processing pressure increased. When the processing pressure was higher than 2 GPa, both SPS response interval and peak changed significantly. XPS results show that the non-lattice oxygen entered into the lattice and the content of lattice oxygen increased with the increase of processing pressure. The material changed from oxygen vacancy type to oxygen excess type and the photoelectric properties changed from n-type to p-type when the processing pressure is higher than 2 GPa.     

Pressure dependence of two-level systems in disordered atomic chain

The dependence of two-level systems in disordered atomic chain on pressure, both positive and negative was studied numerically. The disorder was produced through the use of interatomic pair potentials having more than one energy minimum. It was found that there exists a correlation between the energy separation of the minima of two-level systems Δ and the variation of this separation with pressure. The correlation may have either positive or negative sign, implying that the asymmetry of two-level systems may in average increase or decrease with pressure depending on the interplay of different interactions between atoms in disordered state. The values of Δ depend on the sign of pressure.     

Structural studies on Na0.75CoO2 thermoelectric material at high pressures

The crystal structure of Na_0.75CoO₂ was studied at ambient and low temperatures down to 10 K at pressures up to 40 GPa using synchrotron x-rays and a diamond cell in angle dispersion geometry. A reduction in the c/a ratio was observed at both conditions with the application of pressure. An increase in Co–O bond lengths and a decrease in Na–O bond lengths were observed above 10 GPa. The results of the density functional calculations performed agree well with the pressure induced bond length changes. The anomalous change in the c/a ratio and bond lengths indicate a pressure induced isostructural phase transition above 10 GPa. Bulk modulus calculations show this compound is less compressible than its hydrated analogues.     

Structural and electrical properties evolution in Ba1−xSrxRuO3 synthesized under high pressure

The 6H and 6M Ba_1−xSr_xRuO₃ at x?0.6 with the normal and distorted hexagonal BaTiO₃ structures were synthesized by using high-pressure and high-temperature method. It is found that the unit cell volume deviates from Vegard's law between 0.3 and 0.4 for the solid solutions due to the increasing distortion degree of crystal structure. With the increasing x, the electrical resistivity at the same temperature is increasing. With the substitution of Sr for Ba ion, the 6H BaRuO₃ transforms to a Fermi-liquid metal at x=0.25 from the primal non-Fermi-liquid metal, and then becomes a semiconductor at low temperature when x is larger than 0.4.     

High-pressure synthesis,structure and magnetic properties of LaCrO3 ceramics

Single-phase LaCrO₃ ceramics was synthesized successfully by the solid state sintering method under high pressure (5 GPa). X-ray diffraction measurements suggest that the high-pressure synthesized sample is well-crystallized, but the cell volume is larger than that of the sample synthesized under ambient pressure, which can be ascribed to the occurrence of Cr²⁺ converted form part of Cr³⁺. Such mixed valent state with coexistence of Cr²⁺ and Cr³⁺ could be confirmed by X-ray photoelectron spectroscopy measurements. Magnetic measurement results indicate that in addition to antiferromagnetic superexchange interaction of Cr³⁺-O-Cr³⁺ network accompanied by weak ferromagnetism at high temperature, another kind of ferromagnetic behavior can be observed at low temperature (below 30 K), which could be attributed to double exchange interaction of Cr²⁺-O-Cr³⁺ networks.     

Influence of sintering atmosphere and thermobaric treatment (TBT) on dielectric behaviors of CaCu3Ti4O12 ceramics

Copper titanate (CaCu₃Ti₄O₁₂, or CCTO) ceramics sintered in oxygen and vacuum at 1100°C for 12 h have been treated by thermobaric treatment (TBT) at 9 GPa and 1000°C for 10 min and then quenched in liquid nitrogen (LN₂). Pure cubic body-centered perovskite-related structure was confirmed from XRD results. Besides, after TBT and quenching, additional minor peaks of TiO₂ and Cu were indexed, as well as a little cell volume expansion. A little reduction of the grain size as well as fuzzy grain boundaries can be observed in FE-SEM after TBT. The dielectric constant ε' of CCTO ceramics sintered in oxygen (～4600 @ 100 Hz) were a half of those treated by TBT and quenching (～9600 @ 100 Hz), whereas the value decreased almost by an order of magnitude (from 10⁵ to 10⁴) after TBT and quenching for the samples sintered in vacuum. The complex impedance spectra at high temperature showed three semicircles so a three RC model was used to explain the different relaxation regions consisting of grain, grain boundary and domain boundary. Besides, two relaxation peaks appeared in the frequency dependence of the imaginary part of the electric modulus formalism $M^{?}$ and the complex impedance $Z^{?}$. Moreover, the contributions of grain boundaries can be figured out by the relaxation activation energy $E_{re}$ (338–629 meV) and the conduction one $E_{dc}$ (396–823 meV) fitted by $M^{?}$ and $Z^{?}$ plots separately. As a result, the disorder and heterogeneity typical of grain boundaries should be responsible for the giant dielectric relaxation characteristics of CCTO ceramics, which can be affected by the sintering atmosphere as well as the extreme treating conditions.     

Pressure-sensitive Transistor Fabricated from an OrganicSemiconductor 1,1'-Dibutyl-4,4'-bipyridinium Diiodide

Although organic semiconductors have attracted extensive interest and been utilized to fabricate a variety of optoelectronic devices, their electrical transportation characteristics under high pressure have rarely been investigated. However, the weak intermolecular interaction of organic semiconductors endows them with a pre- ssure-sensitive crystal structure and electrical transportation performance, especially the latter. Herein, a new pre- ssure-sensitive transistor was fabricated from an organic semiconductor 1,1'-dibutyl-4,4'-bipyridinium diiodide. It was found that this transistor exhibited increasing resistance as the pressure gradually increased and that it eventually shut off under a pressure of 288 MPa. Such a characteristic makes this organic semiconductor a potential candidate for the use in the fabrication of pressure-sensitive switches and regulators. In addition, these results shed light on the electrical performance of flexible organic optoelectronic devices working under high pressure levels resulted from the bending force.     

Soot formation and temperature field structure in co-flow laminar methane-air diffusion flames at pressures from 10 to 60 atm

The effects of pressure on soot formation and the structure of the temperature field were studied in co-flow methane-air laminar diffusion flames over a wide pressure range, from 10 to 60 atm in a high-pressure combustion chamber. The selected fuel mass flow rate provided diffusion flames in which the soot was completely oxidized within the visible flame envelope and the flame was stable at all pressures considered. The spatially resolved soot volume fraction and soot temperature were measured by spectral soot emission as a function of pressure. The visible (luminous) flame height remained almost unchanged from 10 to 100 atm. Peak soot concentrations showed a strong dependence on pressure at relatively lower pressures; but this dependence got weaker as the pressure is increased. The maximum conversion of the fuel’s carbon to soot, 12.6%, was observed at 60 atm at approximately the mid-height of the flame. Radial temperature gradients within the flame increased with pressure and decreased with flame height above the burner rim. Higher radial temperature gradients near the burner exit at higher pressures mean that the thermal diffusion from the hot regions of the flame towards the flame centerline is enhanced. This leads to higher fuel pyrolysis rates causing accelerated soot nucleation and growth as the pressure increases.     

Pressure variation of Luttinger liquid parameters in single wall carbon nanotubes networks

We measure electrical transport on networks of single wall nanotube of different origin as a function of temperature T, voltage V and pressure P. We observe Luttinger liquid (LL) behavior, a conductance ∝T^α and a dynamic conductance ∝V^α. We observe a sample dependent P variation of the α parameters, interpreted as Fermi level changes due to pressure induced charge transfer. We show how, through standard four-leads and crossed configuration methods, it is possible to determine α_bulk and α_end, respectively. We study and discuss the pressure and doping level dependences of the number of channels N, the LL parameter g and the intra-rope tube-tube coupling constant U within a phenomenological model.     

Single-crystal growth of Tl2Ru2O7 pyrochlore using high-pressure and flux method

Single crystals of the thallium ruthenium pyrochlore have been grown by flux method under high oxygen pressure. The growth conditions were determined by direct observations using in situ powder X-ray diffraction (XRD) method under high pressure and high temperature. The crystals were grown using NaCl-KCl flux at 1350 °C and B₂O₃ flux at 1150 °C. High growth temperature of 1350 °C for the NaCl-KCl flux caused Pt contamination from the crucible and oxygen deficiency for the crystals obtained. The crystal growth using B₂O₃ flux proceeded at lower temperature by grain growth with material transfer through B₂O₃. The crystal obtained was characterized by single-crystal XRD method, and was found to have a stoichiometric composition, Tl₂Ru₂O_7−δ (δ=0), with a structural phase transition around 120 K. The grain growth technique with B₂O₃ is efficient for high-temperature single-crystal growth under high pressure.