CoFe2O4自形成磁性液体场致结构化对磁化的影响

因为磁性液体的磁性微粒有着很强的相互作用,Langevin顺磁理论不能很好描述磁性液体的磁化强度随外磁场的变化.研究认为影响磁化的主要因素是磁性液体内微粒整体的结构化,其结构的形成储存了部分磁化功,直接或间接地影响了磁化.在此基础上提出“压缩”模型,修正了描述磁性液体常用的Langevin函数,得出了与实验较好符合的曲线.所提出的一个压缩后等效体积分数与外磁场强度的关系式,近似地描述了磁性液体在磁场中磁化的过程.由修正式得出了近似初始磁化率随体积分数变化关系.     

Identifying the underlying structure and dynamic interactions in a voting network

We analyse the structure and behaviour of a specific voting network using a dynamic structure-based methodology which draws on Q-Analysis and social network theory. Our empirical focus is on the Eurovision Song Contest over a period of 20 years. For a multicultural contest of this kind, one of the key questions is how the quality of a song is judged and how voting groups emerge. We investigate structures that may identify the winner based purely on the topology of the network. This provides a basic framework to identify what the characteristics associated with becoming a winner are, and may help to establish a homogenous criterion for subjective measures such as quality. Further, we measure the importance of voting cliques, and present a dynamic model based on a changing multidimensional measure of connectivity in order to reveal the formation of emerging community structure within the contest. Finally, we study the dynamic behaviour exhibited by the network in order to understand the clustering of voting preferences and the relationship between local and global properties.     

The effect of doping by IV-family elements on the electronic structure and electrical characteristics of Sb2O5

The electronic structures of doped Sb₂O₅ by IV-family elements (Si, Ge and Sn) were examined using the density function theory (DFT). Density of states (DOSs) results showed that the substituted IV-family elements act as acceptors in Sb₂O₅. Partial DOSs indicates that by substituting Ge(Ge _Sb ) or Sn(Sn _Sb ), there may be a larger contribution to the total DOSs near E _F than by substituting Si, which suggests that doping Ge or Sn in Sb₂O₅ produces better ptype doping compared to doping Si. Formation energy results show that IV-family elements are more likely to exist in the substituted position rather than in the interstitial position in Sb₂O₅, decreasing any self-compensation effect and making it easier for IV-family elements to realize ptype doping in Sb₂O₅. Ionization energy results show that Ge _Sb or SnSb, two among the three impurities considered, act as shallow acceptors in Sb₂O₅, thus producing a higher concentration of holes.      

Synthesis and luminescent properties of Y6W2O15:Eu phosphors

In this paper, a novel phosphor, Y₆W₂O₁₅:Eu³⁺ was synthesized by thermal decomposition and phase transition of its decatungstate gel precursor. With stepwise increase of temperature to 750 °C, a crystalline phase of Y₆W₂O₁₅:Eu³⁺forms that gives intense red emission when excited at 466 nm, the emission is attributed to the Eu³⁺ ions transitions from ⁵D₀ excited states to ⁷F_J (J=0-4) ground states. The long excitation wavelength proves the Eu³⁺ transition follows the photoexcitation of the oxygen-metal (O→W lmct) charge transfer bands in yttrium tungstate. Some structural information regarding Y₆W₂O₁₅ provided by luminescence is in accord with that characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM). The long-wavelength excitation properties of this material may find application in the production of red phosphors for white light-emitting diodes (LEDs).     

Heteroepitaxial praseodymium sesquioxide films on Si(1 1 1): A new model catalyst system for praseodymium oxide based catalysts

The structure, growth and stoichiometry of heteroepitaxial Pr₂O₃ films on Si(1 1 1) were characterized by a combined RHEED, XRD, XPS and UPS study in view of future applications as a surface science model catalyst system. RHEED and XRD confirm the growth of a (0 0 0 1) oriented hexagonal Pr₂O₃ phase on Si(1 1 1), matching the surface symmetry by aligning the oxide in-plane direction along the Si azimuth. After an initial nucleation stage RHEED growth oscillation studies point to a Frank-van der Merwe growth mode up to a thickness of approximately 12 nm. XPS and UPS prove that the initial growth of the Pr₂O₃ layer on Si up to ∼1 nm thickness is characterized by an interface reaction with Si. Nevertheless stoichiometric Pr₂O₃ films of high crystalline quality form on top of these Pr-silicate containing interlayers.     

Scaling and self-similarity in Pb<Subscript>1-x</Subscript>Fe<Subscript>x</Subscript>S nanoparticle films

This paper addresses the issues of scaling and self-similarity in typical nanoparticle films. The role played by microscopic processes contributing to growth on these issues is probed. While we perform this investigation for a specific system viz., Pb_1-xFe_xS nanoparticle films for clarity of the procedures, the analysis is general and can be applied to a variety of systems obtained using different deposition techniques.     

Flame Temperature Effect on the Structure of SiC Nanoparticles Grown by Laser Pyrolysis

Small SiC nanoparticles (10 nm diameter) have been grown in a flow reactor by CO₂ laser pyrolysis from a C₂H₂ and SiH₄ mixture. The laser radiation is strongly absorbed by SiH₄ vibration. The energy is transferred to the reactive medium and leads to the dissociation of molecules and the subsequent growth of the nanoparticles. The reaction happens with a flame. The purpose of the experiments reported in this paper is to limit the size of the growing particles to the nanometric scale for which specific properties are expected to appear. Therefore the effects of experimental parameters on the structure and chemical composition of nanoparticles have been investigated. For a given reactive mixture and gas velocity, the flame temperature is governed by the laser power. In this study, the temperature was varied from 875°C to 1100°C. The chemical analysis of the products indicate that their composition is a function of the temperature. For the same C/Si atomic ratio in the gaseous phase, the C/Si ratio in the powder increases from 0.7 at 875°C up to 1.02 at 1100°C, indicating a growth mechanism limited by C₂H₂ dissociation. As expected, X-ray diffraction has shown an improved crystallisation with increasing temperature. Transmission electron microscopy observations have revealed the formation of 10 nm grains for all values of laser power (or flame temperature). These grains appear amorphous at low temperature, whereas they contain an increasing number of nanocrystals (2 nm diameter) when the temperature increases. These results pave the way to a better control of the structure and chemical composition of laser synthesised SiC nanoparticles in the 10 nm range.     

Ground state parameters of BiH3 from infrared and millimeter-wave spectra: ground state and equilibrium structures

Unstable, short-lived BiH₃ has been synthesized and investigated by rotational spectroscopy in the range 158 (J=1-0) to 1280 GHz (J=8-7). Quadrupole and spin-rotation hyperfine structures (eQq=584.676(96) MHz), and the A₁A₂ splitting of the K=3 ground state level, have been resolved. By merging the pure rotational data with 1764 ground state combination differences obtained from the analysis of high resolution Fourier transform infrared spectra of the ν₁-ν₄ bands [J. Mol. Spectrosc. (2004) (in press)] spanning J and K values up to 16 and 14, respectively, with 0?ΔK?9, the ground state rotational and centrifugal distortion constants up to octic and sextic terms for reductions A and B, respectively, have been determined. Of the reductions of the ground state rovibrational Hamiltonian, reduction B including ε rather than h₃ as off-diagonal element is clearly favored. An experimental r₀ structure of the very-near spherical oblate symmetric top BiH₃, r(BiH)=178.82 pm and α(HBiH)=90.320°, has been deduced from the rotational constants B₀=2.64160172(18) and C₀=2.6010403(31) cm⁻¹. The derived experimental r_e structure, r_e(BiH)=177.834(50) pm and α_e(HBiH)=90.321(10)°, was determined. This is in excellent agreement with the most recent ab initio structure, r_e(BiH)=177.84 pm, and α_e(HBiH)=90.12°.     

Structural and mechanical properties of multi-element (TiVCrZrHf)N coatings by reactive magnetron sputtering

In this study, (TiVCrZrHf)N multi-component coatings with quinary metallic elements were deposited by reactive magnetron sputtering system. The composition, structure, and mechanical properties of the coatings deposited at different N₂ flow rates were investigated. The (TiVCrZrHf)N coatings deposited at N₂ flow rates of 0, 1, and 2 SCCM showed an amorphous structure, whereas those deposited at N₂ flow rates of 4 and 6 SCCM showed a simple face-centered cubic solid solution structure. A saturated nitride coating was obtained for N₂ flow of 4 SCCM and higher. By increasing N₂ flow to 4 SCCM, the hardness and modulus reached a maximum value of 23.8 ± 0.8 and 267.3 ± 4.0 GPa, respectively.     

Effect of substrate bias voltage on the structure, electric and dielectric properties of TiO2 thin films by DC magnetron sputtering

Titanium dioxide (TiO₂) films have been deposited on glass and p-silicon (1 0 0) substrates by DC magnetron sputtering technique to investigate their structural, electrical and optical properties. The surface composition of the TiO₂ films has been analyzed by X-ray photoelectron spectroscopy. The TiO₂ films formed on unbiased substrates were amorphous. Application of negative bias voltage to the substrate transformed the amorphous TiO₂ into polycrystalline as confirmed by Raman spectroscopic studies. Thin film capacitors with configuration of Al/TiO₂/p-Si have been fabricated. The leakage current density of unbiased films was 1 × 10⁻⁶ A/cm² at a gate bias voltage of 1.5 V and it was decreased to 1.41 × 10⁻⁷ A/cm² with the increase of substrate bias voltage to −150 V owing to the increase in thickness of interfacial layer of SiO₂. Dielectric properties and AC electrical conductivity of the films were studied at various frequencies for unbiased and biased at −150 V. The capacitance at 1 MHz for unbiased films was 2.42 × 10⁻¹⁰ F and it increased to 5.8 × 10⁻¹⁰ F in the films formed at substrate bias voltage of −150 V. Dielectric constant of TiO₂ films were calculated from capacitance–voltage measurements at 1 MHz frequency. The dielectric constant of unbiased films was 6.2 while those formed at −150 V it increased to 19. The optical band gap of the films decreased from 3.50 to 3.42 eV with the increase of substrate bias voltage from 0 to −150 V.