Valuing of the critical layer thickness from the deading time constant of RHEED oscillation in the case of InxGa1−xAs/GaAs heterojunction

In this work, we have looked for the correlation between the observed decay of reflection high-energy electron diffraction intensity oscillation and the critical layer thickness in the case of strained In_xGa_1−xAs/GaAs heterojunctions. The value of deading time constant of oscillation depends on the mismatch and on growth parameters, too. The decay of oscillation was described by two deading time constants which are responsible for the influences of the parameters mentioned above. The critical layer thickness was valued from the deading time constant responsible for the influence of mismatch only. The critical layer thickness determined this way shows good agreement with the theoretical model.     

Photoinduced phase transition accompanied with the changes in magnetic properties

Recently, many studies have been started in search for materials which show a photoinduced phase transition (PIPT). In this work, we review two systems as typical examples of PIPT accompanied with changes in magnetic characteristics; (1) organo-metal complex [Fe(2-pic)₃]Cl₂ EtOH (2-pic = 2-amino-methyl-pyridine) and (2) III-V based magnetic semiconductors (In_1-x , Mn _x )As. In the former case, we show several nonlinear characteristics in dynamical process of photoinduced spin state transition from low-spin to high-spin states. In the latter one, photocarrier-induced ferromagnetic order has been observed by both magnetic and transport measurements.     

(Zr,V)N复合膜的结构、力学性能及摩擦性能研究

通过非平衡磁控溅射的方法制备了不同V含量的(Zr,V)N复合薄膜, 采用EDS, XRD, XPS, 纳米压痕仪和摩擦磨损仪等对薄膜的化学成分、微结构、力学性能及摩擦性能进行了研究. 结果表明, V的加入虽未改变ZrN的fcc晶体结构, 但使薄膜的择优取向由ZrN的(200)面转变为(Zr,V)N的(111)面. 随着V含量增加, (Zr,V)N复合膜的硬度略有升高后缓慢降低, 并在含25.8 at.%V后迅速降低. 与此同时, 薄膜的常温摩擦系数亦有小幅降低. 高温摩擦研究表明, (Zr,V)N薄膜在300 ℃时出现V₂O₃, V₂O₅ 在500 ℃后形成, 其含量也随温度的提高而增加. 薄膜的摩擦系数因V₂O₅ 的形成而得到显著降低. 关键词： (Zr,V)N 薄膜 微结构 力学性能 摩擦性能     

Design of a reentrant double staggered ladder circuit for V-band coupled-cavity traveling-wave tube

The reentrant double staggered ladder slow-wave structure is employed in a high-power V-band coupled-cavity traveling-wave tube. This structure has a wide bandwidth, a moderate interaction impedance, and excellent thermal dissipation properties, besides the easy fabrication. A well-matched waveguide coupler is proposed for the structure. Combining the design of attenuators, a full-scale three-dimensional circuit model for the V-band coupled-cavity traveling-wave tube is constructed. The electromagnetic characteristics and the beam--wave interaction of this structure are investigated. The beam current is set to be 100 mA, and the cathode voltage is tuned from 16.8 kV to 15.8 kV. The calculation results show that this tube can produce a saturated average output power over 100 W with an instantaneous bandwidth greater than 1.25 GHz in the frequency ranging from 58 GHz to 62 GHz. The corresponding gain and electronic efficiency can reach over 32 dB and 6.5%, respectively.     

IR光谱分析PEO/V2O5纳米复合材料结构

聚合物溶液直接嵌入法制备 PEO/ V2 O5纳米复合材料。由红外光谱 (IR)表征了 PEO与氧化物层之间的相互作用。V2 O5干凝胶的钒氧双键 (V=O)主要与层间聚合物 PEO中的醚氧键 (Oet)发生作用 ,以Oet…V=O形式存在     

Design principles and error analysis for reduced-shear plate-bending finite elements

Summary. In this paper, we consider the problem of designing plate-bending elements which are free of shear locking. This phenomenon is known to afflict several elements for the Reissner-Mindlin plate model when the thickness of the plate is small, due to the inability of the approximating subspaces to satisfy the Kirchhoff constraint. To avoid locking, a “reduction operator” is often applied to the stress, to modify the variational formulation and reduce the effect of this constraint. We investigate the conditions required on such reduction operators to ensure that the approximability and consistency errors are of the right order. A set of sufficient conditions is presented, under which optimal errors can be obtained – these are derived directly, without transforming the problem via a Hemholtz decomposition, or considering it as a mixed method. Our analysis explicitly takes into account boundary layers and their resolution, and we prove, via an asymptotic analysis, that convergence of the finite element approximations will occur uniformly as , even on quasiuniform meshes. The analysis is carried out in the case of a free boundary, where the boundary layer is known to be strong. We also propose and analyze a simple post-processing scheme for the shear stress. Our general theory is used to analyze the well-known MITC elements for the Reissner-Mindlin plate. As we show, the theory makes it possible to analyze both straight and curved elements. We also analyze some other elements. Received June 19, 1995     

Fixed points of approximable maps

We present a simple proof of the Leray-Schauder type theorem for approximable multimaps given recently by Ben-El-Mechaiekh and Idzik. We apply this theorem to obtain a Schaefer type theorem, the Birkhoff-Kellogg type theorems, a Penot type theorem for non-self-maps, and quasi-variational inequalities, all related to compact closed approximable maps.

     

Investigation of the electrical and optical properties of InAs/InGaAs dot in a well solar cell

The electroreflectance (ER) and current–voltage (J–V) of InAs/InGaAs dots in a well (DWELL) solar cell (SC) were measured to examine the optical and electrical properties. To investigate the carrier capturing and escaping effects in the quantum dot (QD) states the above and below optical biases of the GaAs band gap were used. In the reverse bias region of the J–V curve, the tunneling effect in the QD states was observed at low temperature. The ideality factors (n) were calculated from the J–V curves taken from various optical bias intensities (I_ex). The changes in the ideality factor (n) and short circuit current (J_SC) were attributed mainly to carrier capture at low temperature, whereas the carrier escaping effect was dominant at room temperature. ER measurements revealed a decrease in the junction electric field (F_J) due to the photovoltaic effect, which was independent of the optical bias source at the same temperature. At low temperature, the reduction of photovoltaic effect could be explained by the enhancement carrier capturing effect due to the strong carrier confinement in QDs.     

Local zone wise elastic and plastic properties of electron beam welded Ti–6Al–4V alloy using digital image correlation technique: A comparative study between uniform stress and virtual fields method

Joining of materials using welding results in the formation of material zones with varying microstructure across the weld. Extraction of the mechanical properties of those individual heterogeneous zones are important in designing components and structures comprised of welds. In this study, the zone wise local extraction of the elastic and plastic properties of an electron beam welded Ti–6Al–4V titanium alloy has been carried out using both the uniform stress method (USM) and the virtual fields method (VFM) involving digital image correlation (DIC) technique. The surface strain field obtained using DIC technique from a transverse weld specimen tensile testing is used for extracting the zone wise strain evolution. Initially, using uniform stress assumption, zone wise full range stress–strain curves are extracted. In USM methodology, the elastic and plastic material models are fitted to the zone wise stress–strain curves and required parameters are extracted from it. But inherent disadvantage is lot of images need to be processed for the parameter extraction. Recently, VFM is gaining lot of popularity in characterization domain as it is robust, accurate and faster. VFM is based on the principle of virtual work where, the weak form of local equilibrium equations and kinematically admissible virtual displacement fields are utilized for parameter extraction. Hollomon׳s power law is used here as the hardening rule. Young׳s modulus, Poisson׳s ratio, yield stress, strength coefficient and strain hardening exponent are the parameters extracted zone wise using both USM and VFM. A Vicker׳s microhardness measurement is also conducted across the weld zone towards mapping the strength behavior. Fusion zone has reported higher yield strength, strength coefficient and Poisson׳s ratio. Young׳s modulus value is found decreasing from base metal towards the fusion zone. The trend observed in parameter variation across the weld zone obtained by both USM and VFM compares very well. Due to various advantages associated with VFM technique it is generally recommended for parameter extraction.     

sp3sTight-binding parameters for transport simulations in compound semiconductors

A genetic algorithm approach is used to fit orbital interaction energies of sp3s* tight-binding models for the nine binary compound semiconductors consistent of Ga, Al, In and As, P, Sb at room temperature. The new parameters are optimized to reproduce the bandstructure relevant to carrier transport in the lowest conduction band and the highest three valence bands. The accuracy of the other bands is sacrificed for the better reproduction of the effective masses in the bands of interest. Relevant band edges are reproduced to within a few meV and the effective masses deviate from the experimental values typically by less than 10%.