电极界面浓差极化对锂金属沉积的影响

锂金属作为下一代高能量密度电池的理想负极材料受到研究人员广泛关注。然而,锂枝晶生长引起的安全隐患和循环寿命短等问题严重影响了锂金属电池的实用化进程。本文以电化学现象和理论为依据,从浓差极化角度详细分析锂金属电沉积过程中枝晶生长、死锂形成和全电池失效机制,并对目前研究较多的多孔宿主电极中的浓差极化及枝晶抑制进行分析,提出锂金属界面浓差电池现象。本文得到的结论为研究人员更深入地探究锂金属保护策略提供了理论依据。     

柱状分层固体媒质的声散射

本文评述了各向同性和横向各向同性柱状分层固体声散射理论和实验研究进展 ,介绍了描述圆柱状界面薄层特性的弹簧模型 ,也讨论了该领域中有待进一步研究的一些问题。     

Studies on adhesion characteristics and corrosion behaviour of vinyltriethoxysilane/epoxy coating protective system on aluminium

The corrosion stability of vinyltriethoxysilane/epoxy coating protective system on aluminium is strongly related to the strength of bonds forming at the metal/organic coating interface. This article is a study of adhesion, composition, electrochemical and transport properties of epoxy coatings electrodeposited on bare aluminium and aluminium pretreated by vinyltriethoxysilane (VTES) during exposure to 3% NaCl. The VTES film was deposited on aluminium surface from 2% vinyltriethoxysilane solution during 30 s. From the values of adhesion strength (pull-off test), time dependence of pore resistance and coating capacitance of epoxy coating (impedance measurements) and diffusion coefficient of water through epoxy coating (gravimetric liquid sorption measurements), the influence of VTES sublayer on the corrosion stability of the electrodeposited epoxy coating was shown.The work discusses the role of the VTES pretreatment in the enhanced adhesion and corrosion stability of epoxy cataphoretic coating. The electrochemical results showed that the aluminium pretreatment by VTES film improved barrier properties of epoxy coating (greater pore resistance and lower coating capacitance). The lower value of diffusion coefficient of water through epoxy coating indicates the lower porosity, while the smaller adhesion reduction points to better adhesion of epoxy coating on aluminium pretreated by VTES film. The composition of the deposited coatings investigated by XPS enabled the clarification of the bonding mechanism.     

Effect of material selection and background impurity on interface property and resulted CIP-GMR performance

In this paper, we investigated the effect of background base pressure, wafer-transferring time between process modules, and stack layer material selection on the current-in-plane giant magneto-resistive (CIP-GMR) interface properties and the resulted CIP-GMR performance. Experimental results showed that seed layer/AFM interface, AFM/pinned layer (PL) interface, pinned layer/Ru interface, and reference layer (RL)/Cu spacer interface are among the most critical ones for a CIP-GMR device. By reducing the background impurity level (water moisture and oxygen), optimizing the wafer process flow sequence, and careful stack-layer material selection, such critical interfaces in a CIP-GMR device can be preserved. Consequently, a much robust GMR performance control can be achieved.     

Mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers – Grown on GaAs,using an interfacial misfit array,and on native GaSb

InAsSb-based nBn photodetectors were fabricated on GaAs, using the interfacial misfit (IMF) array growth mode, and on native GaSb. At −0.1 V operating bias, 200 K dark current densities of 1.4 × 10⁻⁵ A cm⁻² (on GaAs) and 4.8 × 10⁻⁶ A cm⁻² (on GaSb) were measured. At the same temperature, specific detectivity (D^*) figures of 1.2 × 10¹⁰ Jones (on GaAs) and 7.2 × 10¹⁰ Jones (on GaSb) were calculated. Arrhenius plots of the dark current densities yielded activation energies of 0.37 eV (on GaAs) and 0.42 eV (on GaSb). These values are close to the 4 K bandgap of the absorption layers (0.32–0.35 eV) indicating diffusion limited dark currents and small valence band offsets. Significantly, these devices could be used for mid-infrared focal plane arrays operating within the temperature range of cost-effective thermoelectric coolers.     

Application of SAXS to the study of particle-size-dependent thermal conductivity in silica nanofluids

Knowledge of the size and distribution of nanoparticles in solution is critical to understanding the observed enhancements in thermal conductivity and heat transfer of nanofluids. We have applied small-angle X-ray scattering (SAXS) to the characterization of SiO₂ nanoparticles (10–30 nm) uniformly dispersed in a water-based fluid using the Advanced Photon Source at Argonne National Laboratory. Size distributions for the suspended nanoparticles were derived by fitting experimental data to an established model. Thermal conductivity of the SiO₂ nanofluids was also measured, and the relation between the average particle size and the thermal conductivity enhancement was established. The experimental data contradict models based on fluid interfacial layers or Brownian motion but support the concept of thermal resistance at the liquid–particle interface.     

Lower bounds for boundary roughness for droplets in Bernoulli percolation

We consider boundary roughness for the ``droplet' created when supercritical two-dimensional Bernoulli percolation is conditioned to have an open dual circuit surrounding the origin and enclosing an area at least l², for large l. The maximum local roughness is the maximum inward deviation of the droplet boundary from the boundary of its own convex hull; we show that for large l this maximum is at least of order l^1/3(logl)^–2/3. This complements the upper bound of order l^1/3(logl)^–2/3 proved in [Al3] for the average local roughness. The exponent 1/3 on l here is in keeping with predictions from the physics literature for interfaces in two dimensions. The research of the first author was supported by NSF grant DMS-9802368. The research of the second author was supported by NSF grants DMS-9802368 and DMS-0103790.Mathematics Subject Classification (2000): Primary 60K35; Secondary 82B20, 82B43     

ICT并行重建算法设计与实现

分析了三维ICT近似重建FDK快速算法以及算法串行执行与并行执行的复杂度,利用MPI并行编程环境,对原有ICT重建流程进行并行化,在PC集群上实现了并行ICT重建,进行了系统集成。给出了系统应用实现的解决方案与软件集成流程图。实验结果证明串行重建和并行重建结果是一致的,并行重建可以得到比较理想地重建时间结果和比较理想的加速比与效率。     

Kinetic stabilization of Fe film on GaAs(1 0 0): An in situ X-ray reflectivity study

We study the growth of Fe films on GaAs(1 0 0) at a low temperature, 140 K, by in situ X-ray reflectivity (XRR) using synchrotron radiation. The XRR curves are well modeled by a single Fe layer on GaAs both at the growth temperature and after annealed at the room temperature. We found that the surface became progressively rougher during the growth with the growth exponent, β_S = 0.43 ± 0.14. The observed β_S is attributed to the restricted interlayer diffusion at the low growth temperature. The change of the interface width during growth was minimal. When the Fe film was annealed to room temperature, the surface smoothed, keeping the interface width almost unchanged. The confinement of the interface derives from that the diffusion of Ga and As proceeds via the inefficient bulk diffusion, and the overlying Fe film is kinetically stabilized.     

Influence of intramolecular vibrations in charge redistribution at the pentacene-graphite interface

We have investigated the relation between the intramolecular vibrational modes of pentacene and the charge redistribution at the pentacene-graphite interface by using high-resolution electron-energy-loss-spectroscopy. The three main vibrational peaks shift to lower energies as the pentacene film thickness decreases. In order to discuss this energy shift, we have calculated the vibrational energies of a free pentacene molecule by changing its charge state. We have also calculated the vibrational energies of a pentacene molecule adsorbed on a graphite sheet by changing the pentacene-graphite distance. Taking the experimental and calculation results into account, we conclude that the observed energy shifts result from an intramolecular charge redistribution. The present results indicate that the effect of an intramolecular charge redistribution is essential to discuss the origin of an energy shift observed in a vibrational study of an organic molecule/substrate interface.