在液镓电极上反丁烯二腈的电氢化二聚

在液镓电极上,反丁烯二腈（ＦＤＮ）的电氢化二聚（ＥＨＤ）不仅能在含离子型表面活性剂如四乙基对甲苯磺酸铵（ＴＥＡ－ＰＴＳ）溶液中发生,同样也能在含低浓度的强表面活性剂如ＴｒｉｔｏｎＸ－１００溶液中进行,在不含有机表面活性剂的溶液中,ＦＤＮ在滴镓电极上产生一个２电子还原波,生成为丁二腈的饱和单体。在水溶液中加入一定浓度的ＴＥＡ－ＰＴＳ或低浓度的ＴｒｉｔｏｎＸ－１００时,原来的２电子还原波分裂成两个连续     

Highly effective and enantioselective Phospho-Aldol reaction of diphenyl phosphite with N-alkylated isatins catalyzed by quinine

Cinchona alkaloids were first successfully reported to promote enantioselective Phospho-Aldol reaction of diphenyl phosphite to a variety of N-alkylated isatin derivatives in good to excellent yields (up to 99%) and moderate to good enantioselectivities (up to 73% ee) almost in no time.     

One-pot three-component Kabachnik-Fields synthesis of α-aminophosphonates using H-beta zeolite catalyst

One-pot three-component Kabachnik-Fields synthesis of α-aminophosphonates with high yields from the reaction between carbonyl compound, primary amine, and substituted phosphite can be carried out in a short period, using H-beta zeolite as a reusable catalyst.     

Subvalente Galliumtriflate – mögliche Ausgangsverbindungen für Clusterverbindungen des Galliums

Subvalent Gallium Triflates – Potentially Useful Starting Materials for Gallium Cluster Compounds By reaction of GaCp* with trifluormethanesulfonic acid in hexane a mixture of gallium trifluormethanesulfonates (triflates, OTf) is obtained. This mixture reacts readily with lithiumsilanides [Li(thf)₃Si(SiMe₃)₂R] (R = Me, SiMe₃) to afford the cluster compounds [Ga₆{Si(SiMe₃)Me}₆], [Ga₂{Si(SiMe₃)₃}₄] and [Ga₁₀{Si(SiMe₃)₃}₆]. By crystallization from various solvents the gallium triflates [Ga(OTf)₃(thf)₃], [HGa(OTf)(thf)₄]⁺ [Ga(OTf)₄(thf)₃]⁻, [Cp*GaGa(OTf)₂]₂ and [Ga(toluene)₂]⁺ [Ga₅(OTf)₆(Cp*)₂]⁻ were isolated and characterized by single crystal X ray structure analysis.     

A Novel Synthesis of Alkylamino Substituted Methylenediphosphonates Using Bis(trichloromethyl) Carbonate and RCONR1R2

An efficient, economical and easy method for the synthesis of dimethylaminomethylenediphosphonates using bis(trichloromethyl) carbonate and RCONR1R2 has been developed, which proceeded under relatively mild conditions.     

Numerical simulation of the horizontal Bridgman growth. Part II: Three-dimensional flow

We study the steady-state three-dimensional flow which occurs in a horizontal crucible of molten metal under the action of a horizontal temperature gradient. The geometry and the boundary conditions are similar to those encountered in the Bridgman growth process of semiconductor crystals. We find that three-dimensional effects can have a dramatic influence upon the flow, which, before the onset of periodic disturbances, differs appreciably from its two-dimensional counterpart. We also investigate the sensitivity of the flow to non-symmetric disturbances.     

Hydroformylation of methyl-3-pentenoate over a phosphite ligand modified Rh/SiO2 catalyst

A phosphite ligand modified Rh/SiO2 catalyst has been developed for hydroformylation of internal olefins to linear aldehydes, which showed high activity and regioselectivity and could be separated easily by filtration after reaction in an autoclave. Effects of reaction temperature and syngas pressure on the performances of the catalyst in the reaction were also investigated.     

Uniformity investigation of MOCVD‐grown LED layers

Doped or undoped gallium nitride compounds (GaN/InGaN), usually grown by metal‐organic chemical vapor deposition (MOCVD) method, are at the heart of blue and green light emitting diodes (LEDs). Growth uniformities, such as the excited wavelength, luminous intensity and film thickness, critically influence their application in LED devices. In this paper, growth of GaN compounds in a MOCVD reactor, capable of a one‐time production of 36 × 2” wafers of nitrides, has been investigated. To examine growth uniformity across the wafer and from wafer to wafer, the reactor is divided into Zone A, Zone B and Zone C according to distance to the center of the graphite susceptor. Comparative analysis of each zone offers a straightforward view of the mean excitation wavelength, luminous intensity, film thickness and their standard deviations. Conformity of the growth uniformity in each zone is further checked comprehensively through averaging across‐wafer and wafer‐to‐wafer variables and their standard deviations. Zone B is found to retain excellent wavelength uniformity, since it is located at the middle of the susceptor with weaker effects of the susceptor edge and of the inlet gas flow. Zone A, at the center of the reactor, has the best mean intensity and thickness uniformities due to a well control of the infrared temperature measurement during the growth. And Zone C is worst in all uniformities and should be the main focus when optimizing the reactor. The above experimental analysis reveals the principles common to the MOCVD technique, and provides a basic for further optimization of the process window to improve the cycles with considerable reduction of the costs.