Highly effective and enantioselective Phospho-Aldol reaction of diphenyl phosphite with N-alkylated isatins catalyzed by quinine

Cinchona alkaloids were first successfully reported to promote enantioselective Phospho-Aldol reaction of diphenyl phosphite to a variety of N-alkylated isatin derivatives in good to excellent yields (up to 99%) and moderate to good enantioselectivities (up to 73% ee) almost in no time.     

Organoelement Compounds with Al?Al,Ga?Ga,and In?In Bonds

In the attempt to synthesize compounds with aluminum in a low oxidation state and an Al Al bond, by the reduction of alkylaluminum halides with alkali metals, analogous to a Wurtz coupling, in general the deposition of elemental aluminum and the formation of the corresponding trialkylaluminum compounds is observed. Thus, tetrasubstituted dialuminum compounds R₂Al AlR₂, apart from a few poorly characterized examples, were for a long time considered part of an unverified class of substances. Only with the sterically very highly shielded tetrakis[bis(trimethylsilyl)methyl]dialuminum did we achieve the synthesis of the first completely characterized organoelement compound with unlimited stability, which shows aluminum in the oxidation state + II and has an Al Al bond. In the meantime, corresponding compounds for the elements gallium and indium have been obtained. With the simple access to tetrasubstituted dimetal compounds, a fascinating new research area has opened for preparative chemistry, in which the particular interest will naturally lie in the reactive properties of the metal-metal bond.     

镓(Ⅲ)-茜素红体系的吸附伏安法

本文对镓(Ⅲ)与茜素红络合物在悬汞电极上的吸附伏安法作了研究,确定了电极过程.在HAc-NH_4Ac(pH4.06)缓冲溶液中茜素红存在下,用1.5阶微分吸附伏安法测定镓,其线性范围是1×10~(-10)～1×10~(-7)mol/L,其检测限为1×10~(-10)mol/L,并用此法测定了中草药中的痕量镓.     

Ga^3＋的新萃取体系的界面特性和胶团化作用研究

研究了Ｇａ~（３＋）协萃体系（Ｇａ~（３＋）－Ｄ_２ＥＨＰＡ－Ｈ_２ＭＰＡ－正十二烷－Ｈ_２ＳＯ_４）的界面吸附和胶团形成热力学，发现该萃取体系中［Ｈ_２ＭＰＡ］影响Ｄ_２ＥＨＰＡ和Ｈ_２ＭＰＡ的界面吸附性质。在中、高［Ｈ_２ＭＰＡ］范围内Ｄ_２ＥＨＰＡ与Ｈ_２ＭＰＡ的界面吸附行为相反，Ｄ_２ＥＨＰＡ的存在也影响Ｈ_２ＭＰＡ的界面吸附行为。研究了界面张力与各因素关系的数学模型，并获得某些胶团形成和界面吸附特性的物化参数。     

Modellbetrachtungen zum Verständnis unerwarteter Eigenschaften der metalloiden Clusterverbindung [Ga84(N(SiMe3)2)20][Li6Br2(THF)20]·2Toluol

Towards the Understanding of the Unexpected Properties of the Metalloid Cluster Compound [Ga₈₄(N(SiMe₃)₂)₂₀][Li₆Br₂(THF)₂₀]·2Toluol In several short communications we have recently reported on the electrical and superconducting properties of the crystalline title compound 1 which contains anionic Ga₈₄R₂₀‐moieties. Here we present a collection of these results, complemented and interpreted by using DFT‐calculations on model clusters (Ga₈₄(NH₂)₂₀^?). These calculations allow a) a first insight into the dynamics of the Ga₈₄‐moieties (e.g. a rotation of the central Ga₂‐dumbbell) and thus an explanation of the temperature‐dependent Ga‐NMR‐spectra described recently, and b) estimations on the lattice energy of 1 and its resulting unexpected energetic stabilization compared to metallic gallium. A possible contribution of the cations in the electrical conduction mechanism of 1 can also be made feasible with model calculations. The basis for all the results presented is to be found in the “perfect” arrangement of nanoscopic Ga₈₄‐clusters in the crystal. This theoretically predicted condition for superconductivity in a “chain” of identical metal cluster molecules is a requirement which can hardly be realized by means of physical fabrication methods. Therefore, on the one hand the results presented here make for some disillusionment in the field of nanoscience, but on the other hand, especially in the field of synthetic chemistry, they present rewarding challenges for fundamental work in the future.     

Preparation and lithium doping of gallium oxynitride by ammonia nitridation via a citrate precursor route

Gallium oxynitride, isostructural to hexagonal gallium nitride (h-GaN), was obtained by ammonia nitridation of a precursor prepared from the addition of citric acid to an aqueous solution of gallium nitrate. Gallium oxynitride produced at 750 °C had a small amount of gallium vacancies, and was formulated as (Ga_0.89□_0.11) (N_0.66O_0.34) where the symbol □ stands for gallium vacancy. Both the gallium vacancies and oxygen substituted for nitrogen were randomly distributed within the structure. The amount of vacancies decreased with nitridation temperatures in the range of 750-850 °C. Approximately, 10 at% Li⁺ was doped into the gallium oxynitride, using a similar preparation with the additional presence of lithium nitrate, resulted in the random substitution of Ga³⁺ in an atomic ratio of Li/Ga<1 at 750 °C. Oxygen was codoped with lithium and substituted nitrogen in the wurtzite-type crystal lattice. These substitutions reduced the electrical conductivity in the gallium oxynitride semiconductor. A new oxynitride, Li₂Ga₃NO₄, was also obtained with Li₂CN₂ impurity using similar preparations from a mixture of Li/Ga?1. The crystal structure was isostructural with h-GaN, and was refined as P6₃mc with a=0.31674(1) nm, and c=0.50854(2) nm. The Ga and Li occupancies at the 2b site were refined to be 0.6085 and 0.3915, respectively, assuming that the other 2b site was randomly occupied with 1/5O and 4/5N. When the new compound was washed for over 1 min for the removal of Li₂CN₂ impurities, it was decomposed to a mixture of α-GaOOH and α-LiGaO₂. The as-prepared product with Li/Ga=1 showed the highest intensity in yellow luminescence among the products under excitation at 254 nm.     

β-Ga_2O_3∶Cr~(3+)近红外长余辉纳米颗粒的制备及发光性能

以三乙二醇为表面配体,利用沉淀法制备了β-Ga_2O_3∶Cr~(3+)近红外(NIR)长余辉纳米颗粒.考察了反应条件对β-Ga_2O_3∶Cr~(3+)的发光性能和晶体结构的影响,并初步探讨了其NIR余辉发光机理.结果表明,当溶液的p H值为7,煅烧温度为700℃时,可获得高纯度的β-Ga_2O_3∶Cr~(3+)纳米颗粒,其平均粒径为30 nm,最大余辉发射波长可调控为750 nm,NIR余辉发光时间长于384 h.本方法得到的β-Ga_2O_3∶Cr~(3+)长余辉纳米颗粒不仅尺寸小,而且NIR余辉时间长,发射波长可调控,在低背景噪音的深组织活体成像中具有潜在的应用前景.     

Studies on controlled potential coulometric determination of gallium in sodium perchlorate and sodium thiocyanate

Controlled potential coulometric (CPC) studies were carried out for developing a method to determine gallium at milligram levels, in the mixed supporting electrolyte medium (4 M NaClO₄ + 0.5 M NaSCN), employing stirring mercury as a working electrode. Investigations for optimization of working electrode potentials, quantity of charge, level of background current and electrolysis time for achieving quantitative reduction of Ga(III) to Ga and its oxidation back to Ga(III), were undertaken. Effect of gallium content and interference of zinc in of gallium determination were also studied. The developed methodology was employed for the determination of gallium in pure Ga as well as in synthetic U + Ga mixture solutions. Accuracy and precision values of better than 0.5% were obtained at 1-2 mg levels.     

Synthesis,Single Crystal Growth and Crystal Structure of Ta7Cu10Ga34 – a 8 × 4 × 2 Super Structure of CsCl

Single crystals of Ta₇Cu₁₀Ga₃₄ were grown from the elements in a Cu/Ga melt. Ta₇Cu₁₀Ga₃₄ represents the first ternary compound of the system Ta/Cu/Ga. The crystal structure (Cmmm, oC102, Z = 2, a = 23.803(1), b = 12.2087(4), c = 5.7487(2) Å, 1291 refl. 78 parameters, R₁ = 0.037, wR₂ = 0.070). The crystal structure is characterized by rods of pentagonal prisms MGa₁₀, which are alternatingly occupied by Ta and Cu. Four of these rods are connected to columns running in direction (001). These columns are linked by cubic units TaGa₈, CuGa₈, and GaGa₈. According to the characteristic structural elements and the size of the unit cell Ta₇Cu₁₀Ga₃₄ represents a 8 × 4 × 2 super structure of CsCl or bcc. With respect to the underlying CsCl structure the formula can be written as [Ta₇Cu₁₀Ga₂□₁₃]Ga₃₂, i.e. a cubic primitive packing of 32 Ga atoms with Ta, Cu, and Ga in cubic voids and 13 vacancies. The pentagonal‐prismatic coordination of Ta and Cu can formally be obtained from the cubic primitive packing of Ga atoms by a 45° rotation of a part of the Ga₈ cubes. There is a close similarity to the binary compounds Ta₈Ga₄₁ and Ta_2–xGa_5+x. The first one is also related to a CsCl‐like structure, the latter one contains rods of pentagonal prisms, which form the same columns. There are also relations to the ternaries V₂Cu₃Ga₈ and V₁₁Cu₉Ga₄₆, whose cubic structures are more or less complex variants of CsCl.     

Synthesis and Characterization of GaIII,YIII, and LuIII Complexes with Etifenin and Analogues

Complexes of etifenin ( 1a ), disofenin ( 1b ), and mebrofenin ( 1c ) with Ga^III, Y^III, and Lu^III were synthesized and characterized by NMR spectroscopy and UV/Vis spectroscopy. Stability and protonation constants of the complexes of 1a were determined by potentiometry and distribution diagrams were calculated. It was shown that the Y^III and Lu^III species are most stable as bis chelates at higher pH, whereas the Ga^III complex degrades at pH < 4.5.