Different acute effects of oral and intratracheal administration of disodium arsenate and gallium arsenide on heme synthesis in rats

The acute influences of arsenic compounds on the metabolism of porphyrins and heme in various organs of rats after oral or intratracheal administration of disodium arsenate (Na₂HAsO₄) and gallium arsenide (GaAs) were examined and compared. For the oral administration experiments, 21 or 84 mg of Na₂HAsO₄, or 2 or 4 g of GaAs, per cm³ saline per kg body weight of each animal was administered to Jcl: Wistar male rats and the organs were removed after exsanguination from the vein of the right axilla under anesthesia with ether, 16 h after administration. In the case of intratracheal administration, rats given 8.2 or 16.4 mg of Na₂HAsO₄, or 0.2 or 0.4 g GaAs per cm³ saline per kg body weight were examined under the same experimental conditions as for the administration route. Increase in the body weight of rats was suppressed after intratracheal administration of the two arsenic compounds. In these rats the hematocrit value increased significantly. These changes were not shown by the orally administered rats. Elevation in δ-aminolevulinate synthase (ALA-S, EC 2.3.1.37) activity in erythroblasts by Na₂HAsO₄ was much higher after intratracheal administration than after oral administration. Suppression in the activities of δ-aminolevulinate dehydratase (ALA-D, EC 4.2.1.24) and porphobilinogen deaminase (PBG-D, EC 4.3.1.8) in peripheral erythrocytes by Na₂HAsO₄ and GaAs were stronger by intratracheal administration than by the oral route. Influences of GaAs on the activity of PBG-D in rat liver were shown to be more effective by oral administration than by the intratracheal route. Oral administration of Na₂HAsO₄ and GaAs had a stronger suppression effect on the activities of ALA-D and PBG-D in rat kidney. It seems from these results that the different extents of the influence of arsenic compounds might depend on the routes of intake.     

Thermal conductivity, dislocation density and GaN device design

The performance of high power transistor devices is intimately connected to the substrate thermal conductivity. In this study, the relationship between thermal conductivity and dislocation density is examined using the 3 omega technique and free standing HVPE GaN substrates. Dislocation density is measured using imaging cathodoluminescence. In a low dislocation density regime below 10⁵ cm⁻², the thermal conductivity appears to plateau out near 230 W/K m and can be altered by the presence of isotopic defects and point defects. For high dislocation densities the thermal conductivity is severely degraded due to phonon scattering from dislocations. These results are applied to the design of homoepitaxially and heteroepitaxially grown HEMT devices and the efficiency of heat extraction and the influence of lateral heat spreading on device performance are compared.     

Spectrographic estimation of Ga, In and Tl in semiconductor grade selenium

Summary An emission spectrographic method for the estimation of Ga, In and Tl in semiconductor grade selenium at less than a ppm concentration has been developed. The impurities were separated from 1 g of selenium by volatilizing it from its solution in nitric acid and sulphuric acid. The residue containing the impurities was dissolved in small amounts of 6 M HCl and was loaded along with the washings on 10 mg mixture containing graphite (90%) and sodium chloride carrier (10%) in the electrode crater. The spectra were excited in a d.c. arc carrying 13 A current. The detection limits lie in the range of 0.0025–0.005 ppm. The precision of the method ranges from 7–12% for these elements. The recoveries of impurities from selenium were confirmed using radioactive tracers.

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Spektrographische Bestimmung von Gallium, Indium und Thallium in Halbleiterselen

Zusammenfassung Eine 1 g-Probe wird in Salpeter- und Schwefelsäure gelöst und die Verunreinigungen durch Verflüchtigung des Selens isoliert. Sie werden in 6 M HCl gelöst und zusammen mit einem Graphit/NaCl-Gemisch (91) in die Elektrode eingebracht. Zur Anregung dient ein Gleichstrombogen (13 A). Die Nachweisgrenzen liegen im Bereich von 0.0025–0.005 ppm, der Variationskoeffizient bei 7–12%. Die Wiedergewinnung der Verunreinigungen wurde mit Hilfe von Radioindicatoren geprüft.

     

Facile one-pot synthesis of BINOL- and H8-BINOL-based aryl phosphites and their use in palladium catalysed asymmetric allylation

Novel P-monodentate aryl phosphite ligands have been synthesised in one step from (R)-BINOL, (R)-H₈-BINOL and (R)-H₈-3,3′-dibromo-BINOL. With the new aryl phosphites, up to 86% ee was observed in the asymmetric Pd-catalysed amination of 1,3-diphenyl-2-propenyl acetate with sodium diformylamide. In the enantioselective alkylation of 1,3-diphenyl-2-propenyl acetate with dimethyl malonate, up to 97% enantioselectivity was achieved.     

Ion-selective electrode for gallium determination in nickel alloy, fly-ash and biological samples

A poly(vinyl chloride)-based membrane of 2,9-dimethyl-4,11-diphenyl-1,5,8,12-tetraazacyclotetradeca-1,4,8,11-tetraene (DDTCT) with sodium tetraphenyl borate (STB) as an anion excluder and dibutyl phthalate (DBP), dibutyl butylphosphonate (DBBP), tris(2-ethylhexyl) phosphate (TEP) and tributyl phosphate (TBP) as plasticizing solvent mediators was prepared and investigated as a Ga(III)-selective electrode. The best performance was observed with the membrane having the ligand-PVC-DBP-STB composition 1:4:1:1, which worked well over a wide concentration range (1.45 × 10⁻⁶ to 0.1 mol L⁻¹) with a Nernstian slope of 28.7 mV per decade of activity between pH 4.0 and 10.0. This electrode showed a fast response time of 12 s and was used over a period of 100 days with good reproducibility (s = 0.3 mV). The selectivity coefficients for monovalent, divalent and trivalent cations indicate excellent selectivity for Ga(III) ions over a large number of cations. Anions such as Cl⁻ and SO₄²⁻ do not interfere and the electrode also works satisfactorily in partially water-alcohol medium. The practical utility of the membrane sensor has also been observed in solutions contaminated with detergents, i.e., cetyltrimethylammonium bromide and sodium dodecyl sulfate and used for the determination of gallium in nickel alloy, fly-ash and biological samples.     

Synthesis and properties of novel poly(amide-imide)s containing pendent diphenylamino groups

A new dicarboxylic acid, 2,4-bis(N-trimellitoyl)triphenylamine, bearing two preformed imide rings was synthesized from the condensation of 2,4-diaminotriphenylamine and trimellitic anhydride at 1:2 molar ratio. A series of poly(amide-imide)s (PAIs) with inherent viscosities of 0.38-0.66 dl/g were prepared by triphenyl phosphite-activated polycondensation from the diimide-dicarboxylic acid with various aromatic diamines. All the resulting PAIs were readily soluble in a variety of organic solvents and formed strong and tough films via solution casting. These PAIs have useful levels of thermal stability associated with moderately high glass-transition temperatures (259-314 °C) and 10% weight loss temperatures in excess of 530 °C in nitrogen or in air.     

Temperature dependence of GaSb and AlGaSb solar cells

Sb-based alloys offer great potential for photovoltaic and thermophotovoltaic applications. In this paper, we study the performance of Al_xGa_1-xSb (x = 0, 0.15, and 0.50) single-junction solar cells over a temperature range of 25–250 °C. The dark current-voltage, one-sun current-voltage, and external quantum efficiency measurements were acquired at different temperatures. Correlations between experimental and numerical results are made to draw conclusions about the thermal behavior of the cells. It is shown that, while the bandgaps decrease linearly with temperature leading to the reduction of open-circuit voltages, the short-circuit current densities decrease with non-linear trends. The temperature-dependent dark current densities were extracted by fitting the dark current-voltage curves to single- and double-diode models to give an insight into the effect of intrinsic carrier concentration (n_i) on the cell performance. We find that the n_i has a significant impact on temperature-dependent cell performance. These findings could lay a groundwork for the future Sb-based photovoltaic systems that operate at high temperatures.     

Invention,development, and status of the blue light-emitting diode,the enabler of solid-state lighting

The realization of the first high-brightness blue-light-emitting diodes (LEDs) in 1993 sparked a more than twenty-year period of intensive research to improve their efficiency. Solutions to critical challenges related to material quality, light extraction, and internal quantum efficiency have now enabled highly efficient blue LEDs that are used to generate white light in solid-state lighting systems that surpass the efficiency of conventional incandescent lighting by 15–20×. Here we discuss the initial invention of blue LEDs, historical developments that led to their current state-of-the-art performance, and potential future directions for blue LEDs and solid-state lighting.     

Crack-free micromachining on glass substrates by visible LIBWE using liquid metallic absorbers

Laser induced backside wet etching (LIBWE) is a promising laser direct-write technique for etching transparent materials and for producing high precision and near-optical quality surfaces. In this study, visible LIBWE using gallium and eutectic indium/gallium as absorbers was used for crack-free microfabrication of sodalime and quartz. Eutectic indium/gallium (In/Ga) has a melting temperature lower than metallic gallium does and the etching rate by using In/Ga was found to be similar to that by gallium for visible LIBWE. When using the gallium absorber, the etching threshold of quartz by visible LIBWE was about one-third of that by UV LIBWE. The heat-affected zone of the quartz etching was negligible at the trench rim in the visible LIBWE process. The wettability of the metallic absorbers on the substrates affects aspect ratio and is a new important factor for LIBWE. In addition, etching rate decreased when repetition rate was increased.     

A study of Ga layers on Si(1 0 0)-(2 × 1) by SR-PES: Influence of adsorbed water

Results for deposition and thermal annealing of gallium on the Si(1 0 0)-(2 × 1) surface achieved by synchrotron radiation photoelectron spectroscopy (SR-PES) and low energy electron diffraction (LEED) are presented. In addition to deposition of Ga on a clean surface, the influence of water adsorption on the arrangement of gallium atoms was also studied. The results on Ga deposition at a higher temperature (490 °C) are consistent with a Ga ad-dimer model showing equivalent bond arrangement of all Ga atoms for coverages up to 0.5 ML. The deposition onto a surface with adsorbed water at room temperature led to a disordered gallium growth. In this case gallium atoms bind to silicon dimers already binding fragments of adsorbed water. A subsequent annealing of these layers leads to a surface structure similar to the Ga-(2 × 2), however, it is less ordered, probably due to the presence of silicon oxides formed from water fragments.