Determination of oxygen in gallium using spark-source mass spectrometry

Summary Spark-source mass spectrometry was used for the determination of oxygen in gallium. Specially formed electrodes made of oxygen standard in gold matrix provided the possibility of baking the source together with the sample and obtaining a reliable comparison of line blackenings for the evaluation of results. The method was used for the detection of oxygen in gallium in the range of 8 to 200 ppmw.

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Bestimmung von Sauerstoff in Gallium mit der Funken-Massenspektrometrie

Zusammenfassung Die Funken-Massenspektrometrie ist für die Bestimmung des Sauerstoffgehalts in Gallium eingesetzt worden. Mit speziell geformten Elektroden aus Gold mit bekannten Anteilen an Sauerstoff war es möglich, die Ionenquelle zusammen mit der Probe auszuheizen und über einen zuverlässigen Vergleich der Linienschwärzungen den Sauerstoffanteil der Probe zu erhalten. Diese Methode wurde eingesetzt, um Sauerstoffgehalte in Gallium zwischen 8 und 200 ppmw zu bestimmen.

     

镓(Ⅲ)-芦丁极谱络合吸附波的研究

在(CH_2)_6N_4-HCl缓冲底液中,获得了Ga(Ⅲ)-芦丁的络合物吸附催化前波,检出限达1.0×10~(-3)mol/L。用其测定了以SiO_2、Al_2O_3为基体的催化剂中的镓.研究了其电极过程机理。     

Crack-free micromachining on glass substrates by visible LIBWE using liquid metallic absorbers

Laser induced backside wet etching (LIBWE) is a promising laser direct-write technique for etching transparent materials and for producing high precision and near-optical quality surfaces. In this study, visible LIBWE using gallium and eutectic indium/gallium as absorbers was used for crack-free microfabrication of sodalime and quartz. Eutectic indium/gallium (In/Ga) has a melting temperature lower than metallic gallium does and the etching rate by using In/Ga was found to be similar to that by gallium for visible LIBWE. When using the gallium absorber, the etching threshold of quartz by visible LIBWE was about one-third of that by UV LIBWE. The heat-affected zone of the quartz etching was negligible at the trench rim in the visible LIBWE process. The wettability of the metallic absorbers on the substrates affects aspect ratio and is a new important factor for LIBWE. In addition, etching rate decreased when repetition rate was increased.     

铝土矿中微量镓的分析方法进展

综述了近几年国内铝土矿中镓分析方法的研究进展,叙述了用于微量镓分析测定的光度法、伏安法、原子吸收光谱法、电感耦合等离子体-原子发射光谱法、电感耦合等离子体-质谱法、X射线荧光光谱法等分析方法,对方法的优缺点进行了评述,并对今后微量镓分析测定方法进行了展望.     

Radiolabeled Nanogels for Nuclear Molecular Imaging

An efficient and simple synthesis approach to form stable ⁶⁸Ga‐labeled nanogels is reported and their fundamental properties investigated. Nanogels are obtained by self‐assembly of amphiphilic statistical prepolymers derivatised with chelating groups for radiometals. The resulting nanogels exhibit a well‐defined spherical shape with a diameter of 290 ± 50 nm. The radionuclide ⁶⁸Ga is chelated in high radiochemical yields in an aqueous medium at room temperature. The phagocytosis assay demonstrates a highly increased internalization of nanogels by activated macrophages. Access to these ⁶⁸Ga‐nanogels will allow the investigation of general behavior and clearance pathways of nanogels in vivo by nuclear molecular imaging.

     

Effects of passage of 200 MeV Ag9+ ions in indium phosphide at different depths

Indium phosphide sample was irradiated with 200?MeV Ag⁹⁺ ions for the fluence of 2?×?10¹³?ions?cm^?2. The sample was chemically etched down up to 240?nm depth to investigate the distribution of defects at different regions. Raman scattering and glancing incidence X-ray diffraction spectra were recorded at different depths. The stress estimated from Raman shift was found to increase with depth up to 160?nm and thereafter it decreased and at a depth of 224?nm sample did not show any stress. Phonon coherence length estimated from the Phonon Confinement Model was found to vary between 43 and 18?nm with respect to depth. Glancing incidence X-ray diffraction results revealed the decrease in crystallite size from 16.12 to 1.00?nm in different depth regions.     

The Electronic and Infrared Absorption Spectra of Toluene-d

Abstract

The infrared and ultraviolet absorption spectra of toluene-d have been investigated for the first time in the regions 400 - 4000 cm^?1 and 2350 ?2750 A° respectively. The intense band at 2666.3 A°(37494 cm^?1) in the u.v. vapour absorption spectrum has been identified as the o,o band and others have been interpreted in terms of the three (519,632 and 785 cm^?1) ground state and the six (454,526,743,935,963 and 1180 cm^?1 excited state fundamentals. The correlation of the various frequencies of the ground and excited states of toluene and toluene-d has been done. The observed isotopic shift for toluene-d is 14 cm^?1.     

Multicomponental Fluorimetric Determination of Aluminium, Gallium and Indium

For the fast characteristics of mixtures of Aluminium, Gallium and Indium the fluorimetric evaluation in the form of complexes with 8-Hydroxyquinoline-5-sulphonic acid is described at selected pH. The highly collinear correlated fluorescent spectra and their first derivation were evaluated under various experimental conditions with the Multiple Linear Regression (MLR), Partial Least Squares (PLS) methods and Kalman filtering. When comparing the results, the PLS gives the least relative prediction errors under optimal conditions, 5.6–15.9% for the concentration range of Al 0.025–0.2 μg cm⁻³, Ga 0.1–0.8 μg cm⁻³ and In 0.1–0.8 μg cm⁻³ in the mixture.     

New Ga/N‐based Active Lewis Pairs,Trifunctional Ga–Ga Compounds,Reactions with Cyanamide and Dual Insertion of Isocyanate

Hydrogallation of Me₃Si–C≡C–NR'₂ with R₂Ga–H (R = tBu, CH₂tBu, iBu) yielded Ga/N‐based active Lewis pairs, R₂Ga–C(SiMe₃)=C(H)–NR'₂ ( 7 ). The Ga and N atoms adopt cis‐positions at the C=C bonds and show weak Ga–N interactions. tBu₂GaH and Me₃Si–C≡C–N(C₂H₄)₂NMe afforded under exposure of daylight the trifunctional digallium(II) compound [MeN(C₂H₄)₂N](H)C=C(SiMe₃)Ga(tBu)–Ga(tBu)C(SiMe₃)=C(H)[N(C₂H₄)₂NMe] ( 8 ), which results from elimination of isobutene and H₂ and Ga–Ga bond formation. 8 was selectively obtained from the ynamine and [tBu(H)Ga–Ga(H)tBu]₂[HGatBu₂]₂. 7a (R = tBu; NR'₂ = 2,6‐Me₂NC₅H₈) and H₈C₄N–C≡N afforded the adduct tBu₂Ga‐C(SiMe₃)=C(H)(2,6‐Me₂NC₅H₈) · N≡C–NC₄H₈ ( 11 ) with the nitrile bound to gallium. The analogous ALP with harder Al atoms yielded an adduct of the nitrile dimer or oligomers of the nitrile at room temperature. The reaction of 7a with Ph–N=C=O led to the insertion of two NCO groups into the Ga–C_vinyl bond to yield a GaOCNCN heterocycle with Ga bound to O and N atoms ( 12 ).     

Visible and NIR luminescence of nanocrystalline β-Ga2O3:Er prepared by solution combustion synthesis

In this paper we report on facile solution combustion synthesis of erbium doped β-Ga₂O₃ with urea as fuel. The product was characterized using powder X-ray diffraction and transmission electron microscopy (TEM). X-ray diffraction and TEM showed that the material is nanostructured. Luminescence properties of β-Ga₂O₃:Er are studied with excitation in near infrared (Nd:YAG laser at 1064 nm) and visible (argon laser at 514.5 nm). A strong NIR emission of Er³⁺ in the window of minimal optical loss in silica based optical fibers, due to the ⁴I_13/2→⁴I_15/2 transition at 1.55 μm has been observed. Codoping with Yb³⁺ significantly increases the intensity of that important emission.