Laser induced backside wet etching (LIBWE) is a promising laser direct-write technique for etching transparent materials and for producing high precision and near-optical quality surfaces. In this study, visible LIBWE using gallium and eutectic indium/gallium as absorbers was used for crack-free microfabrication of sodalime and quartz. Eutectic indium/gallium (In/Ga) has a melting temperature lower than metallic gallium does and the etching rate by using In/Ga was found to be similar to that by gallium for visible LIBWE. When using the gallium absorber, the etching threshold of quartz by visible LIBWE was about one-third of that by UV LIBWE. The heat-affected zone of the quartz etching was negligible at the trench rim in the visible LIBWE process. The wettability of the metallic absorbers on the substrates affects aspect ratio and is a new important factor for LIBWE. In addition, etching rate decreased when repetition rate was increased. 相似文献
An efficient and simple synthesis approach to form stable 68Ga‐labeled nanogels is reported and their fundamental properties investigated. Nanogels are obtained by self‐assembly of amphiphilic statistical prepolymers derivatised with chelating groups for radiometals. The resulting nanogels exhibit a well‐defined spherical shape with a diameter of 290 ± 50 nm. The radionuclide 68Ga is chelated in high radiochemical yields in an aqueous medium at room temperature. The phagocytosis assay demonstrates a highly increased internalization of nanogels by activated macrophages. Access to these 68Ga‐nanogels will allow the investigation of general behavior and clearance pathways of nanogels in vivo by nuclear molecular imaging.
Abstract The infrared and ultraviolet absorption spectra of toluene-d have been investigated for the first time in the regions 400 - 4000 cm?1 and 2350 ?2750 A° respectively. The intense band at 2666.3 A°(37494 cm?1) in the u.v. vapour absorption spectrum has been identified as the o,o band and others have been interpreted in terms of the three (519,632 and 785 cm?1) ground state and the six (454,526,743,935,963 and 1180 cm?1 excited state fundamentals. The correlation of the various frequencies of the ground and excited states of toluene and toluene-d has been done. The observed isotopic shift for toluene-d is 14 cm?1. 相似文献
For the fast characteristics of mixtures of Aluminium, Gallium and Indium the fluorimetric evaluation in the form of complexes
with 8-Hydroxyquinoline-5-sulphonic acid is described at selected pH. The highly collinear correlated fluorescent spectra
and their first derivation were evaluated under various experimental conditions with the Multiple Linear Regression (MLR),
Partial Least Squares (PLS) methods and Kalman filtering. When comparing the results, the PLS gives the least relative prediction
errors under optimal conditions, 5.6–15.9% for the concentration range of Al 0.025–0.2 μg cm−3, Ga 0.1–0.8 μg cm−3 and In 0.1–0.8 μg cm−3 in the mixture. 相似文献
Hydrogallation of Me3Si–C≡C–NR'2 with R2Ga–H (R = tBu, CH2tBu, iBu) yielded Ga/N‐based active Lewis pairs, R2Ga–C(SiMe3)=C(H)–NR'2 ( 7 ). The Ga and N atoms adopt cis‐positions at the C=C bonds and show weak Ga–N interactions. tBu2GaH and Me3Si–C≡C–N(C2H4)2NMe afforded under exposure of daylight the trifunctional digallium(II) compound [MeN(C2H4)2N](H)C=C(SiMe3)Ga(tBu)–Ga(tBu)C(SiMe3)=C(H)[N(C2H4)2NMe] ( 8 ), which results from elimination of isobutene and H2 and Ga–Ga bond formation. 8 was selectively obtained from the ynamine and [tBu(H)Ga–Ga(H)tBu]2[HGatBu2]2. 7a (R = tBu; NR'2 = 2,6‐Me2NC5H8) and H8C4N–C≡N afforded the adduct tBu2Ga‐C(SiMe3)=C(H)(2,6‐Me2NC5H8) · N≡C–NC4H8 ( 11 ) with the nitrile bound to gallium. The analogous ALP with harder Al atoms yielded an adduct of the nitrile dimer or oligomers of the nitrile at room temperature. The reaction of 7a with Ph–N=C=O led to the insertion of two NCO groups into the Ga–Cvinyl bond to yield a GaOCNCN heterocycle with Ga bound to O and N atoms ( 12 ). 相似文献
In this paper we report on facile solution combustion synthesis of erbium doped β-Ga2O3 with urea as fuel. The product was characterized using powder X-ray diffraction and transmission electron microscopy (TEM). X-ray diffraction and TEM showed that the material is nanostructured. Luminescence properties of β-Ga2O3:Er are studied with excitation in near infrared (Nd:YAG laser at 1064 nm) and visible (argon laser at 514.5 nm). A strong NIR emission of Er3+ in the window of minimal optical loss in silica based optical fibers, due to the 4I13/2→4I15/2 transition at 1.55 μm has been observed. Codoping with Yb3+ significantly increases the intensity of that important emission. 相似文献
This paper describes the reversible control of the size of liquid‐metal nanoparticles under ultrasonication. Gallium was utilized as a liquid metal, which has a melting point of 29.8 °C. Investigating the effects of ultrasonication (power, time, and temperature) on the formation of gallium nanoparticles revealed that the process is similar to the formation of oil in water (O/W) or water in oil (W/O) emulsions, as the temperature significantly affects the size of the gallium nanoparticles (GaNPs). Under ultrasonication, the balance between the break‐up and coalescence of the GaNPs can be adjusted by changing the temperature or adding acid through modulating the natural surface oxide layer (which can be removed with acid) and the stabilizing effect of the surfactant dodecanethiol. Coalescence was predominant at higher temperatures, whereas particle break‐up was found to be predominant at lower temperatures. Furthermore, the change in size was accompanied by a shift in the plasmonic absorption of the GaNPs in the UV region. 相似文献
In this study, we proposed ‘switching ultrasonic amplitude’ as a new strategy of applying ultrasonic energy to prepare a hybrid of buckminsterfullerene (C60) and gallium oxide (Ga2O3), C60/Ga2O3. In the proposed method, we switched the ultrasonic amplitude from 25% to 50% (by 5% amplitude per 10 min, within 1 h of ultrasonic irradiation) for the sonochemical treatment of a heterogeneous aqueous mixture of C60 and Ga2O3 by a probe-type ultrasonic horn operating at 20 kHz. We found that compared to the conventional techniques associated with high amplitude oriented ultrasonic preparation of functional materials, switching ultrasonic amplitude can better perform in preparing C60/Ga2O3 with respect to avoiding titanium (Ti) as an impurity generating from the tip erosion of a probe-type ultrasonic horn during high amplitude ultrasonic irradiation in an aqueous medium. Based on SEM/EDX analysis, the quantity of Ti (wt.%) in C60/Ga2O3 prepared by the proposed technique of switching ultrasonic amplitude was found to be 1.7% less than that prepared at 50% amplitude of ultrasonic irradiation. The particles of C60/Ga2O3 prepared by different modes of amplitude formed large (2–12 μm) aggregates in their solid phase.Whereas, in the aqueous medium, they were found to disperse in their nano sizes. The minimum particle size of the as-synthesized C60/Ga2O3 in an aqueous medium prepared by the proposed method of switching ultrasonic amplitude reached to approximately 467 nm. Comparatively, the minimum particle sizes were approximately 658 nm and 144 nm, using 25% and 50% amplitude, respectively. Additionally, Ga2O3 went under hydration during ultrasonic irradiation. Moreover, due to the electron cloud interference from C60 in the hybrid structure of C60/Ga2O3, the vibrational modes of Ga2O3 were Raman inactive in C60/Ga2O3. 相似文献