Large Second Harmonic Generation (SHG) Effect and High Laser‐Induced Damage Threshold (LIDT) Observed Coexisting in Gallium Selenide

A big challenge for nonlinear optical (NLO) materials is the application in high power lasers, which needs the simultaneous occurrence of large second harmonic generation (SHG) and high laser induced damage threshold (LIDT). Herein we report the preparation of a new Ga₂Se₃ phase, which shows the SHG intensities of around 2.3 times and the LIDT of around 16.7 times those of AgGaS₂ (AGS), respectively. In addition, its IR transparent window ca. 0.59–25 μm is also significantly wider than that of AGS (ca. 0.48–≈11.4 μm). The occurrence of the strong SHG responses and good phase‐matching indicate that the structure of the new Ga₂Se₃ phase can only be non‐centrosymmetric and have a lower symmetry than the cubic γ‐phase. The observed excellent SHG and phase‐matching properties are consistent with our diffraction experiments and can be well explained by using the orthorhombic models obtained through our high throughput simulations.     

β-Ga2O3∶Cr3+近红外长余辉纳米颗粒的制备及发光性能

以三乙二醇为表面配体, 利用沉淀法制备了β-Ga₂O₃∶Cr³⁺近红外(NIR)长余辉纳米颗粒. 考察了反应条件对β-Ga₂O₃∶Cr³⁺的发光性能和晶体结构的影响, 并初步探讨了其NIR余辉发光机理. 结果表明, 当溶液的pH值为7, 煅烧温度为700 ℃时, 可获得高纯度的β-Ga₂O₃∶Cr³⁺纳米颗粒, 其平均粒径为30 nm, 最大余辉发射波长可调控为750 nm, NIR余辉发光时间长于384 h. 本方法得到的β-Ga₂O₃∶Cr³⁺长余辉纳米颗粒不仅尺寸小, 而且NIR余辉时间长, 发射波长可调控, 在低背景噪音的深组织活体成像中具有潜在的应用前景.     

Syntheses,Crystal Structures and Luminescent Properties of Three New Gallium Complexes Containing Pyridine-2,6-dicarboxylic Acid

Three new gallium complexes formulated as [Ga(PDA)₂][Ga(H₂O)(PDA)(phen)]·4H₂O(1), [Ga(PDA)₂]· (H₂IN)·2H₂O(2) and [Ga(OH)(PDA)(H₂O)]₂(3)(H₂PDA=pyridine-2,6-dicarboxylic acid; phen=1,10-phenanthroline; HIN=isonicotinic acid) have been synthesized under hydrothermal conditions. In the mixed-ligand system of complex 1, PDA^2? and phen are connected to the central Ga³⁺ cation as tri- and bi-dentate ligands, respectively. In complex 2, each Ga³⁺ cation is six-coordinated by two PDA^2? anions octahedrally. Complex 3 shows a binuclear structure, with the bond distance of Ga1-Ga2 being 0.30061(3) nm. The 3D supramolecular structures of the three complexes are constructed via hydrogen bonds and aromatic π-π packing interactions. All the three complexes exhibit intense blue emission at room temperature in the solid state, which are attributed to π^*-π transition centered on the ligands.     

Surface reconstructions of MnAs grown on GaAs(001)

During epitaxial growth of MnAs on GaAs(001) by molecular-beam epitaxy (MBE) the surface exhibits various reconstructions depending on the growth conditions. These reconstructions have been studied during growth by reflection high-energy electron diffraction (RHEED) and reflectance difference spectroscopy (RDS). A feature sensitive to the surface structure was identified in the RD spectra. After growth, the (1×2) and (1×1) reconstructions were cooled down to room temperature and imaged in ultrahigh vacuum with a conventional scanning tunneling microscope (STM). Atomic-scale images of these surfaces are presented.     

Hydrothermal Syntheses,Crystal Structures and Thermal Properties of Two New Organically Templated Open-framework Gallium Phosphites

Two new open-framework gallium phosphites formulated as (C₂N₂H₁₀)_0.5Ga₂(OH)(H₂O)(HPO₃)₃(1) and (C₃N₂H₅)₂(C₃N₂H₆)Ga₈(H₂O)₆(HPO₃)₁₄(2) were hydrothermally synthesized in the presence of ethylenediamine(en) and imidazole as structure directing agents(SDA), respectively. Structural analyses reveal that the 3D structures of compounds 1 and 2 are both built up from the linkage of GaO₆, GaO₅(H₂O) and HPO₃^2? units by sharing vertices. The structure of compound 2 is constructed from well-known 4.6.12-net connecting layers in the AAAA stacking sequence, which are penetrated by the 1D Ga-O-P chains to form a 3D pillared-layered structure.     

ICP-AES研究纳米TiO2材料对Ga,In, Tl的吸附性能

研究了纳米TiO2材料对Ga,In,Tl的吸附性能,考察了吸附动力学、最佳酸度、富集倍数和吸附容量,确定了待测金属离子的最佳吸附条件。实验结果表明:在最佳pH条件下,Ga,In,Tl能定量、快速地被吸附在纳米TiO2材料上;其静态吸附容量为:Ga48·6mg·g-1,In46·6mg·g-1和Tl23·4mg·g-1;被吸附在纳米TiO2上的金属离子能采用0·1mol·L-1EDTA 1·0mol·L-1HNO3混合溶液定量洗脱,其回收率均大于92%。当富集倍数为12·5时,本法对Ga(Ⅲ),In(Ⅲ),Tl(Ⅰ)的检出限分别为3·0,6·0,13ng·mL-1。计算了相应的相对标准偏差(RSD%)分别为1·85%,1·96%,3·40%,该方法已成功地应用于地质样品中痕量Ga(Ⅲ),In(Ⅲ),Tl(Ⅰ)的测定,结果满意。     

Electron surface states in short-period superlattices: (GaAs)2/(AlAs)2(1 0 0)-c(4 × 4)

The electronic structure of (GaAs)₂/(AlAs)₂(1 0 0)-c(4 × 4) superlattice surfaces was studied by means of angular-resolved photoelectron spectroscopy (ARUPS) in the photon energy range 20-38 eV. Four samples with different surface termination layers were grown and As-capped by molecular beam epitaxy (MBE). ARUPS measurements were performed on decapped samples with perfect c(4 × 4) reconstructed surfaces. An intensive surface state was, for the first time, observed below the top of the valence band. This surface state was found to shift with superlattices’ different surface termination in agreement with theoretical predictions.     

8-羟基喹啉-5-磺酸为柱前螯合荧光试剂的反相离子对高效液相色谱法连续测定锡、镓和锆的方法研究

作者利用新发现的很稳定的锆-8-羟基喹啉-5-磺酸-EDTA三元荧光络合物的特殊反应及锡和镓的络合物会被EDTA分解的选择性反应,根据作者提出的金属络合物在苯基柱上的保留机理,在试验的基础上建立荧光-反相离子对高效液相色谱法连续测定锡、镓、锆的新分析方法。方法快速,准确,干扰小,适于实际样品分析。检测限分别为1.05ng,0.20ng和0.25ng,相对标准偏差在1.2％～4.4％之间。