β-Ga2O3∶Cr3+近红外长余辉纳米颗粒的制备及发光性能

以三乙二醇为表面配体, 利用沉淀法制备了β-Ga₂O₃∶Cr³⁺近红外(NIR)长余辉纳米颗粒. 考察了反应条件对β-Ga₂O₃∶Cr³⁺的发光性能和晶体结构的影响, 并初步探讨了其NIR余辉发光机理. 结果表明, 当溶液的pH值为7, 煅烧温度为700 ℃时, 可获得高纯度的β-Ga₂O₃∶Cr³⁺纳米颗粒, 其平均粒径为30 nm, 最大余辉发射波长可调控为750 nm, NIR余辉发光时间长于384 h. 本方法得到的β-Ga₂O₃∶Cr³⁺长余辉纳米颗粒不仅尺寸小, 而且NIR余辉时间长, 发射波长可调控, 在低背景噪音的深组织活体成像中具有潜在的应用前景.     

Efficient excitation and amplification of the surface plasmons

One dimensional (1D) grating has been fabricated (using focused ion beam) on 50 nm gold (Au) film deposited on higher refractive index Gallium phosphate (GaP) substrate. The sub-wavelength periodic metal nano structuring enable to couple photon to couple with the surface plasmons (SPs) excited by them. These grating devices provide the efficient control on the SPs which propagate on the interface of noble metal and dielectric whose frequency is dependent on the bulk electron plasma frequency of the metal. For a fixed periodicity (Λ = 700 nm) and slit width (w = 100 nm) in the grating device, the efficiency of SPP excitation is about 40% compared to the transmission in the near-field. Efficient coupling of SPs with photon in dielectric provide field localisation on sub-wavelength scale which is needed in Heat Assisted Magnetic recording (HAMR) systems. The GaP is also used to emulate Vertical Cavity Surface emitting laser (VCSEL) in order to provide cheaper alternative of light source being used in HAMR technology. In order to understand the underlying physics, far-and near-field results has been compared with the modelling results which are obtained using COMSOL RF module.Apart from this, grating devices of smaller periodicity (Λ = 280 nm) and slit width (w = 22 nm) has been fabricated on GaP substrate which is photoluminescence material to observe amplified spontaneous emission of the SPs at wavelength of 805 nm when the grating device was excited with 532 nm laser light. This observation is unique and can have direct application in light emitting diodes (LEDs).     

Fabrication of microchannels in single-crystal GaN by wet-chemical-assisted femtosecond-laser ablation

We investigated micro- and nano-fabrication of wide band-gap semiconductor gallium nitride (GaN) using a femtosecond (fs) laser. Nanoscale craters were successfully formed by wet-chemical-assisted fs-laser ablation, in which the laser beam is focused onto a single-crystal GaN substrate in a hydrochloric acid (HCl) solution. This allows efficient removal of ablation debris produced by chemical reactions during ablation, resulting in high-quality ablation. However, a two-step processing method involving irradiation by a fs-laser beam in air followed by wet etching, distorts the shape of the crater because of residual debris. The threshold fluence for wet-chemical-assisted fs-laser ablation is lower than that for fs-laser ablation in air, which is advantageous for improving fabrication resolution since it reduces thermal effects. We have fabricated craters as small as 510 nm by using a high numerical aperture (NA) objective lens with an NA of 0.73. Furthermore, we have formed three-dimensional hollow microchannels in GaN by fs-laser direct-writing in HCl solution.     

ICP-AES研究纳米TiO2材料对Ga,In, Tl的吸附性能

研究了纳米TiO2材料对Ga,In,Tl的吸附性能,考察了吸附动力学、最佳酸度、富集倍数和吸附容量,确定了待测金属离子的最佳吸附条件。实验结果表明:在最佳pH条件下,Ga,In,Tl能定量、快速地被吸附在纳米TiO2材料上;其静态吸附容量为:Ga48·6mg·g-1,In46·6mg·g-1和Tl23·4mg·g-1;被吸附在纳米TiO2上的金属离子能采用0·1mol·L-1EDTA 1·0mol·L-1HNO3混合溶液定量洗脱,其回收率均大于92%。当富集倍数为12·5时,本法对Ga(Ⅲ),In(Ⅲ),Tl(Ⅰ)的检出限分别为3·0,6·0,13ng·mL-1。计算了相应的相对标准偏差(RSD%)分别为1·85%,1·96%,3·40%,该方法已成功地应用于地质样品中痕量Ga(Ⅲ),In(Ⅲ),Tl(Ⅰ)的测定,结果满意。     

纳米GaP粉体反射光谱的测量及其分析

通过测量纳米磷化镓(GaP)粉体在紫外可见光波段(200-800nm)的反射光谱,运用三流理论由反射光谱计算出纳米GaP粉体的吸收系数(Ea)和散射系数(Es)的比值(Ea/Es)。纳米GaP粉体的反射光谱的形状主要受吸收的影响,即GaP禁带结构的影响。     

Hydrothermal Syntheses,Crystal Structures and Thermal Properties of Two New Organically Templated Open-framework Gallium Phosphites

Two new open-framework gallium phosphites formulated as (C₂N₂H₁₀)_0.5Ga₂(OH)(H₂O)(HPO₃)₃(1) and (C₃N₂H₅)₂(C₃N₂H₆)Ga₈(H₂O)₆(HPO₃)₁₄(2) were hydrothermally synthesized in the presence of ethylenediamine(en) and imidazole as structure directing agents(SDA), respectively. Structural analyses reveal that the 3D structures of compounds 1 and 2 are both built up from the linkage of GaO₆, GaO₅(H₂O) and HPO₃^2? units by sharing vertices. The structure of compound 2 is constructed from well-known 4.6.12-net connecting layers in the AAAA stacking sequence, which are penetrated by the 1D Ga-O-P chains to form a 3D pillared-layered structure.     

Syntheses,Crystal Structures and Luminescent Properties of Three New Gallium Complexes Containing Pyridine-2,6-dicarboxylic Acid

Three new gallium complexes formulated as [Ga(PDA)₂][Ga(H₂O)(PDA)(phen)]·4H₂O(1), [Ga(PDA)₂]· (H₂IN)·2H₂O(2) and [Ga(OH)(PDA)(H₂O)]₂(3)(H₂PDA=pyridine-2,6-dicarboxylic acid; phen=1,10-phenanthroline; HIN=isonicotinic acid) have been synthesized under hydrothermal conditions. In the mixed-ligand system of complex 1, PDA^2? and phen are connected to the central Ga³⁺ cation as tri- and bi-dentate ligands, respectively. In complex 2, each Ga³⁺ cation is six-coordinated by two PDA^2? anions octahedrally. Complex 3 shows a binuclear structure, with the bond distance of Ga1-Ga2 being 0.30061(3) nm. The 3D supramolecular structures of the three complexes are constructed via hydrogen bonds and aromatic π-π packing interactions. All the three complexes exhibit intense blue emission at room temperature in the solid state, which are attributed to π^*-π transition centered on the ligands.