Approach for dislocation free GaN epitaxy

The characteristics of confined epitaxial growth are investigated with the goal of determining the contributing effects of mask attributes (spacing, feature size) and growth conditions (V/III ratio, pressure, temperature) on the efficiency of the approach for dislocation density reduction of GaN. In addition to standard (secondary electron and atomic force) microscopy, electron channeling contrast imaging (ECCI) is employed to identify extended defects over large (tens of microns) areas. Using this method, it is illustrated that by confining the epitaxial growth, high quality GaN can be grown with dislocation densities approaching zero.     

Calcium Bis[bis(trimethylsilyl)amino‐triethylgallate] — A Molecule with Ca‐C‐Ga Three‐Center Bonds

The reaction of calcium‐bis[bis(trimethylsilyl)amide] with two equivalents triethylgallium yields nearly quantitatively the addition product. In the solid state the calcium atoms are coordinated by two nitrogen atoms and two ethyl groups, whereas in solution all ethyl substituents are magnetically equivalent even at low temperatures. The Ca‐C‐Ga two‐electron three‐center bonds show mean Ca‐N and Ca‐C distances of 243 and 268 pm, respectively.     

Accurate Small-Signal Model Extraction for pHEMT on GaAs

An accurate small-signal modeling approach applied to GaAs-based pHEMT devices is presented. The procedure for extracting equivalent-circuit model parameters is illustrated in detail. A genetic algorithm (GA) program is developed to optimize the model parameters in order to improve the modeling accuracy. The validity of modeling approach is verified by comparing the simulated and measured result of two pHEMTs and a fabricated ka-band power amplifier. The conclusion can be drawn that the proposed modeling method is rather accurate and efficient.     

Surface reconstructions and phase transitions on the GaAs(111)B surface

The (111)B surface of GaAs has been investigated using scanning tunneling microscopy (STM) and a number of different reconstructions have been found at different surface stoichiometries. In accordance with electron diffraction studies, we find the series (2 × 2), (1 × 1)_LT, ( ) and (1 × 1)_HT with increasing annealing temperature, corresponding to decreasing surface As concentration. The (1 × 1)_LT is of particular interest, since it only occurs in a narrow temperature window between the two more established reconstructions, the (2 × 2) and the ( ). We find the (1 × 1)_LT to take the form of a mixture of the local structures of both the (2 × 2) and ( ) phases, rather than having a distinct structure. This is behaviour consistent with a kinetically limited system, dominated by the supply of As adatoms to the surface, and may be an example of a continuous phase transition. Above the (1 × 1)_LT transition, atomic resolution images of the ( ) surface reveal only a three-fold symmetry of the hexagonal structural units, brought about by inequivalent surface bonding due to the 23.4° rotation of the surface unit cell relative to the substrate. This is responsible for the disorder found in the ( ) reconstruction, since the structure may form in one of two domains. At lower surface As concentration, the (1 × 1)_HT surface adopts a structure combining small domains of a 19.1° structure and random disorder. There is no apparent similarity between the (1 × 1)_LT and (1 × 1)_HT structures, which may be due to our measurements being conducted at room temperature and without an As flux to control the surface As concentration.     

The Gallides SrRh2Ga2, SrIr2Ga2, and Sr3Ir4Ga4

The gallides SrRh₂Ga₂, SrIr₂Ga₂, and Sr₃Rh₄Ga₄ were obtained from the elements by induction melting and subsequent annealing. They were investigated by powder and single‐crystal X‐ray diffraction: CaRh₂B₂ type, Fddd, a = 573.2(1), b = 1051.3(1), c = 1343.7(2) pm, wR₂ = 0.0218, 398 F² values, 15 variables for SrRh₂Ga₂; a = 576.0(1), b = 1045.5(1), c = 1350.6(3) pm for SrIr₂Ga₂, and Na₃Pt₄Ge₄ type, I$\bar{4}$ 3m, a = 777.4(2) pm, wR₂ = 0.0234, 190 F² values, 11 variables for Sr₃Ir₄Ga₄. The gallides SrRh₂Ga₂ and Sr₃Ir₄Ga₄ exhibit complex, covalently bonded three‐dimensional [Rh₂Ga₂] and [Ir₄Ga₄] networks with short Rh–Ga (241–246 pm) and Ir–Ga (243–259 pm) distances. The strontium atoms fill large cages within these networks. They are coordinated by 8 Rh + 10 Ga in SrRh₂Ga₂ and by 4 Ir + 8 Ga in Sr₃Ir₄Ga₄. The structure of SrRh₂Ga₂ is discussed along with the monoclinic distortion variants HoNi₂B₂ and BaPt₂Ga₂ on the basis of a group‐subgroup scheme.     

Electronic structure of GaN nanotubes

Nanotube properties are strongly dependent on their structures. In this study, gallium nitride nanotubes (GaNNTs) are analyzed in armchair and zigzag conformations. The wurtzite GaN (0001) surface is used to model the nanotubes. Geometry optimization is performed at the PM7 semiempirical level, and subsequent single-point energy calculations are carried out via Hartree–Fock and B3LYP methods, using the 6-311G basis set. Semiempirical and ab initio methods are used to obtain strain energy, charge distribution, dipole moment, |HOMO-LUMO| gap energy, density of states and orbital contribution. The gap energy of the armchair structure is 3.82 eV, whereas that of the zigzag structure is 3.92 eV, in agreement with experimental data.     

Synthesis and characterization of the unusual cluster [Ni2(GaAr′)2(η:η-μ2-C2H4)]: Ready addition of ethylene to Ni(COD)(GaAr′)2 at 25 °C and 1 atmosphere

The nickel (0) compound Ni(COD)(GaAr′)₂ (Ar′ = C₆H₃-2,6-(C₆H₃-2,6-i-Pr₂)₂), 1, was synthesized by the reaction of Ni(COD)₂ (COD = 1,5-cyclooctadiene) with (GaAr′)₂. Compound 1 reacted with ethylene at 25 °C and at 1 atm pressure to give the bimetallic cluster [Ni₂(GaAr′)₂(η¹:η¹-μ₂-C₂H₄)], 2, through the incorporation of one molecule of ethylene and displacement of COD. The structure of 2 featured an unusual Ni₂Ga₂C₂ core bicyclic structure in which the C₂H₄ moiety bridges the Ga···Ga edge of a Ga₂Ni₂ tetrahedron. The galliums each carry an η¹-bonded Ar′ substituent which complexes the nickel atom by an η⁶-π interaction with one of its flanking Ar’ rings.     

Searching for gallium bioactive compounds: Gallium(III) complexes of tridentate salicylaldehyde semicarbazone derivatives

In the search for gallium bioactive compounds five Ga(III) complexes, [Ga^III(L-H)₂](NO₃), with tridentate salicylaldehyde semicarbazone derivatives as ligands (L) have been synthesized and characterized in the solid state and in solution by different techniques. The crystal structure of [Ga^III(L4-H)₂](NO₃)·2H₂O, where L4 is 3-ethoxysalicylaldehyde semicarbazone, was solved by X-ray diffraction methods. The gallium(III) ion is in a distorted octahedral environment, coordinated to two nearly planar and mutually perpendicular 3-ethoxysalicylaldehyde semicarbazonato anions acting as tridentate ligands through their phenol and carbonyl oxygen atoms and their azomethine nitrogen atom. Their biological potential has been explored by evaluating their activity on Mycobacterium tuberculosis, causative agent of tuberculosis, and their cytotoxicity on tumor cell lines. Three different human tumor cell lines were selected that show different degrees of resistance to metallodrugs: ovarian A2780 (low resistance), breast MCF7 (medium resistance) and prostate PC3 (high resistance) cells. Although the complexes have not shown activity on M. tuberculosis, complexation with gallium has led to the enhancement of the cytotoxic potencies of the organic compounds. Those complexes that contain a bromide substituent at the phenolate ring have shown the highest cytotoxicities. In particular, [Ga^III(L2-H)₂](NO₃), where L2 is 5-bromosalicylaldehyde semicarbazone,·has shown a remarkable cytotoxicity on A2780 tumor cell line with an IC₅₀ value of the same order than cisplatin (IC_{50 Ga-L2} = 2.4 ± 0.3 μM; IC_{50 cisplatin} = 2.0 ± 0.1 μM, 72 h incubation at 37 °C). Interestingly, this complex has also shown moderate cytotoxicity against MCF7 and PC3 cells (IC_{50 MCF7} = 30 ± 6; IC_{50 PC3} = 18 ± 3 μM). Therefore, this gallium compound could be considered a promising wide spectrum potential anti-tumor agent.